RMWL26001 21-26.5 GHz Low Noise Amplifier MMIC PRODUCT INFORMATION Description Features The RMWL26001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 26.5 GHz Low Noise Amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 26 GHz transmit/receive chipset. The RMWL26001 utilizes Raytheon's 0.25m power PHEMT process and is sufficiently versatile to serve in a variety of low noise amplifier applications. 4 mil substrate Small-signal gain 21 dB (typ.) 2.9 dB noise figure (typ.) Chip size 3.0 mm x 1.25 mm Absolute Maximum Ratings Parameter Positive DC voltage (+4V Typical) Negative DC voltage Simultaneous (Vd - Vg) Positive DC Current RF Input Power (from 50 source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance Symbol Value Unit Vd Vg Vdg ID PIN TC Tstg Rjc +6 -2 8 100 +8 -30 to +85 -55 to +125 170 Volts Volts Volts mA dBm C C C/W (Channel to Backside) Electrical Characteristics (At 25C 50 system, Vd=+4V, Quiescent current (Idg)=65 mA Parameter Frequency Range Gate Supply Voltage1 (Vg) Gain at Pin=-15 dBm (21-24 GHz) Gain at Pin=-15 dBm (21-26.5 GHz) Gain Variation vs Freq. (21-26.5 GHz) Gain at 1dB Compression (21-26.5 GHz) Power Output at 1dB Compression Min 21 Typ Max 26.5 -0.5 Unit GHz V 20 22 26 dB 20 21 26 dB 2.8 dB 20 dB 10 dBm Parameter Drain Current at Pin=-15 dBm Drain Current at 1dB Compression Input Return Loss (Pin=-15 dBm) Output Return Loss (Pin=-15 dBm) Noise Figure OIP3 Min Typ Max Unit 65 mA 80 mA 12 dB 12 2.9 22 4.0 dB dB dBm Note: 1. Typical range of negative gate voltage is -0.8 to -0.2 V to set typical Idq of 65 mA. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14, 2001 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMWL26001 21-26.5 GHz Low Noise Amplifier MMIC PRODUCT INFORMATION Application Information CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325C for 15 minutes. Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typically 2 mil between the chip and the substrate material. Figure 1 Functional Block Diagram Drain Supply VDD1 Drain Supply VDD2 Drain Supply VDD3 Drain Supply VDD4 MMIC Chip RF IN RF OUT Ground (Back of Chip) Figure 2 Chip Layout and Bond Pad Locations Gate Supply Vg Dimensions in mm 0.621 0.0 1.870 2.223 2.721 Chip Size is 3.0 mm x 1.25 mm x 100 m. Back of chip is RF and DC ground 0.600 0.451 0.0 0.0 0.301 1.154 1.701 2.690 Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14, 2001 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMWL26001 21-26.5 GHz Low Noise Amplifier MMIC PRODUCT INFORMATION Figure 3 Recommended Application Schematic Circuit Diagram Drain Supply Vd=+4 V L = Bond Wire Inductance L 10,000pF L 100pF 10,000pF L 100pF L L L L L L 100pF 100pF L MMIC Chip RF IN RF OUT L L L 100pF 100pF Ground (Back of Chip) 100pF L L Gate Supply Vg Figure 4 Recommended Assembly Diagram Vdd (Positive) 10,000pF 10,000pF Die-Attach 80Au/20Sn 100pF 100pF 100pF 100pF 5 mil Thick Alumina 50-Ohm 5mil Thick Alumina 50-Ohm RF Output RF Input 100pF 2 mil Gap Vg (Negative) 100pF L< 0.015" (4 Places) Note: Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14, 2001 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMWL26001 21-26.5 GHz Low Noise Amplifier MMIC PRODUCT INFORMATION Recommended Procedure for Biasing and Operation CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE AMPLIFIER CHIP. The following sequence of steps must be followed to properly test the amplifier: Step 1: Turn off RF input power. Step 2: Connect the DC supply grounds to the grounds of the chip carrier. Slowly apply negative gate bias supply voltage of -1.5 V to Vg. Step 3: Slowly apply positive drain bias supply voltage of +4 V to Vd. Step 4: Adjust gate bias voltage to set the quiescent current of Idq=65 mA. Step 5: After the bias condition is established, RF input signal may now be applied at the appropriate frequency band. Step 6: Follow turn-off sequence of: (i) Turn off RF input power, (ii) Turn down and off drain voltage (Vd), (iii) Turn down and off gate bias voltage (Vg). Performance Data RMWL26001 26 GHz Low Noise Amplifier, Typical Performance On-Wafer Measurements, IDQ = 65 mA, VDD = 4.0 V 25 0 -5 15 -10 S21 (dB) 20 S11 10 -15 S11 S22 (dB) S21 S22 5 -20 0 -25 21 21.5 22 22.5 23 23.5 24 24.5 25 25.5 26 26.5 Frequency (GHz) Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14, 2001 Page 4 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMWL26001 21-26.5 GHz Low Noise Amplifier MMIC PRODUCT INFORMATION RMWL26001 26 GHz Low Noise Amplifier, Typical Performance 50 Ohm Test Fixture Included. IDQ = 65 mA, VDD = 4.0 V 25 0 S11 S21 -5 15 -10 S21 (dB) 20 S22 10 -15 5 -20 0 S11 S22 (dB) Performance Data -25 0 5 10 15 20 25 30 Frequency (GHz) RMWL26001 26 GHz Low Noise Amplifier, Typical Noise Figure On-Wafer Measurements, IDQ = 65 mA, VDD = 4.0 V 4 3.9 3.8 3.7 Noise Figure (dB) 3.6 3.5 3.4 3.3 3.2 3.1 3 2.9 2.8 2.7 2.6 2.5 20.5 21 21.5 22 22.5 23 23.5 24 24.5 25 25.5 26 26.5 Frequency (GHz) Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14, 2001 Page 5 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMWL26001 21-26.5 GHz Low Noise Amplifier MMIC PRODUCT INFORMATION RMWL26001 26 GHz Low Noise Amplifier, Typical Performance On-Wafer Measurements, IDQ = 65 mA VDD = 4.0 V Performance Data 12 26 24 11.25 23 11 Output Power at P1dB (dBm) 25 Output Power 11.5 22 Gain (P1dB) 10.75 21 10.5 20 10.25 19 10 18 9.75 17 9.5 16 9.25 15 9 14 8.75 13 8.5 12 8.25 11 8 Gain at P1dB (dBm) 11.75 10 21 21.5 22 22.5 23 23.5 24 24.5 25 25.5 26 26.5 27 Frequency (GHz) RMWL26001 26 GHz Low Noise Amplifier, Typical Performance On-Wafer Measurements, IDQ = 65 mA VDD = 4.0 V 25 0 -5 15 -10 S21 (dB) 20 S11 10 -15 S11 S22 (dB) S21 S22 5 -20 0 -25 18 19 20 21 22 23 24 25 26 27 28 29 30 Frequency (GHz) Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14, 2001 Page 6 Raytheon RF Components 362 Lowell Street Andover, MA 01810 Worldwide Sales Representatives PRODUCT INFORMATION Spartech South 2115 Palm Bay Road, NE, Suite 4 Palm Bay, FL 32904 321-727-8045 fax: 321-727-8086 Jim Morris jim@spartech-south.com TEQ Sales, Inc. 920 Davis Road, Suite 304 Elgin, IL 60123 847-742-3767 fax: 847-742-3947 Dennis Culpepper dculpepper@teqsales.com Cantec Representatives 8 Strathearn Ave, No. 18 Brampton, Ontario Canada L6T 4L9 905-791-5922 fax: 905-791-7940 Dave Batten cantec-ott@cantec-o.net Steward Technology 6990 Village Pkwy #206 Dublin, CA 94568 925-833-7978 fax: 925-560-6522 John Steward johnsteward1@msn.com Sangus OY Lunkintie 21, 90460 Oulunsalo Finland 358-8-8251-100 fax: 358-8-8251-110 Juha Virtala juha.virtala@sangus.fi Sangus AB Berghamnvagen 68 Box 5004 S-165 10 Hasselby Sweden Ronny Gustafson 468-0-380210 fax: 468-0-3720954 Globes Elektronik & Co. Klarastrabe 12 74072 Heilbronn Germany 49-7131-7810-0 fax: 49-7131-7810-20 Ulrich Blievernicht hfwelt@globes.de MTI Engineering Ltd. Afek Industrial Park Hamelacha 11 New Industrial Area Rosh Hayin 48091 Israel 972-3-902-5555 fax: 972-3-902-5556 Adi Peleg adi_p@mti-group.co.il Sirces srl Via C. Boncompagni, 3B 20139 Milano Italy 3902-57404785 fax: 3902-57409243 Nicola Iacovino nicola.iacovino@sirces.it Asia ITX Corporation 2-5, Kasumigaseki 3-Chome Chiyoda-Ku Tokyo 100-6014 Japan 81-3-4288-7073 fax: 81-3-4288-7243 Maekawa Ryosuke maekawa.ryosuke@ itx-corp.co.jp Sea Union 9F-1, Building A, No 19-3 San-Chung Road Nankang Software Park Taiwan, ROC Taipei 115 02-2655-3989 fax: 02-2655-3918 Murphy Su murphy@seaunionweb.com.tw Worldwide Distribution Headquarters 6321 San Ignacio Drive San Jose, CA 95119 408-360-4073 fax: 408-281-8802 Art Herbig art.herbig@avnet.com France 4 Allee du Cantal Evry, Cedex France 33 16079 5900 fax: 33 16079 8903 sales.fr@ bfioptilas.avnet.com Holland Chr. 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Box 6067 Amherst, NH 03031 866-230-5453 fax: 603-672-9228 sales@hi-peak.com Europe United Kingdom Burnt Ash Road Aylesford, Kent England ME207XB 44 1622882467 fax: 44 1622882469 Belgium and Luxembourg rfsales.uk@ bfioptilas.avnet.com Cipalstraat 2440 GEEL Belgium 32 14 570670 fax: 32 14 570679 sales.be@bfioptilas.avnet.com Sales Office Headquarters Customer Support www.raytheon.com/micro United States (East Coast) Raytheon 362 Lowell Street Andover, MA 01810 978-684-8628 fax: 978-684-8646 Walter Shelmet wshelmet@ rrfc.raytheon.com United States (West Coast) Raytheon 362 Lowell Street Andover, MA 01810 978-684-8919 fax: 978-684-8646 Rob Sinclair robert_w_sinclair@ rrfc.raytheon.com Europe Raytheon AM Teckenberg 53 40883 Ratingen Germany 49-2102-706-155 fax: 49-2102-706-156 Peter Hales peter_j_hales@ raytheon.com 978-684-8900 fax: 978-684-5452 customer_support@rrfc.raytheon.com Characteristic performance data and specifications are subject to change without notice. Revised March 14, 2001 Page 7 Raytheon RF Components 362 Lowell Street Andover, MA 01810