1 2008-10-10
BCP54...-BCP56...
1
2
3
4
NPN Silicon AF Transistors
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP51...BCP53 (PNP)
Pb-free (RoHS compliant) package1)
Qualified according AEC Q101
Type Marking Pin Configuration Package
BCP54
BCP54-16
BCP55
BCP55-16
BCP56-10
BCP56-16
*
*
*
*
*
*
1=B
1=B
1=B
1=B
1=B
1=B
2=C
2=C
2=C
2=C
2=C
2=C
3=E
3=E
3=E
3=E
3=E
3=E
4=C
4=C
4=C
4=C
4=C
4=C
-
-
-
-
-
-
-
-
-
-
-
-
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
* Marking is the same as the type-name
1Pb-containing package may be available upon special request
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Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
BCP54
BCP55
BCP56
VCEO
45
60
80
V
Collector-emitter voltage
BCP54
BCP55
BCP56
VCER
45
60
100
Collector-base voltage
BCP54
BCP55
BCP56
VCBO
45
60
100
Emitter-base voltage VEBO 5
Collector current IC1 A
Peak collector current, t
p
10 ms ICM 1.5
Base current IB100 mA
Peak base current IBM 200
Total power dissipation-
TS 120°C
Ptot 2 W
Junction temperature T
j
150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS 15 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
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Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BCP54...
IC = 10 mA, IB = 0 , BCP55...
IC = 10 mA, IB = 0 , BCP56-10, -16
V(BR)CEO
45
60
80
-
-
-
-
-
-
V
Collector-base breakdown voltage
IC = 100 µA, IE = 0 , BCP54...
IC = 100 µA, IE = 0 , BCP55...
IC = 100 µA, IE = 0 , BCP56-10, -16
V(BR)CBO
45
60
100
-
-
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5 - -
Collector-base cutoff current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
20
µA
DC current gain1)
IC = 5 mA, VCE = 2 V
IC = 150 mA, VCE = 2 V, BCP54/BCP55
IC = 150 mA, VCE = 2 V, BCP56-10
IC = 150 mA, VCE = 2 V, BCP54-16...BCP56-16
IC = 500 mA, VCE = 2 V
hFE
25
40
63
100
25
-
-
100
160
-
-
250
160
250
-
-
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
VCEsat - - 0.5 V
Base-emitter voltage1)
IC = 500 mA, VCE = 2 V
VBE(ON) - - 1
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz
fT- 100 - MHz
1Pulse test: t < 300µs; D < 2%
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DC current gain hFE = ƒ(IC)
VCE = 2 V
EHP00268BCP 54...56
3
10 mA
0
10
3
10
5
5
100101
101
C
FE
h
Ι
2
10
2
10
C
100
5
25
C
-50
C
104
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
0
EHP00271BCP 54...56
CEsat
V
0.4 V 0.8
10
0
10
1
3
10
Ι
C
mA
C
2
10
0.2 0.6
10
4
100
25 C
C
-50
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
0
10
EHP00270BCP 54...56
BEsat
V
0
4
10
Ι
C
mA
0.2
1
10
2
10
3
10
0.4 0.6 0.8 1.2V
C
100
25
C
-50
C
Collector cutoff current ICBO = ƒ(TA)
VCBO = 30 V
0
10
EHP00269BCP 54...56
A
T
150
-1
4
10
Ι
CBO nA
50 100
0
10
1
10
3
10
C
102
max
typ
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Transition frequency fT = ƒ(IC)
VCE = 10 V
10
EHP00267BCP 54...56
03
10mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
fMHz
Ι
55
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
0.4
0.8
1.2
1.6
W
2.4
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
RthJS
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
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Package SOT223
Package Outline
Foot Print
Marking Layout (Example)
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
2005, 24 CW
Date code (YYWW)
BCP52-16
Type code
Pin 1
123
3
4
±0.1
±0.04
0.5 MIN.
0.28
0.1 MAX.
15˚ MAX.
6.5
±0.2
A
4.6
2.3
0.7
±0.1
0.25
M
A
1.6
±0.1
7
±0.3
B0.25
M
±0.2
3.5
B
3.5
1.4 4.8 1.4
1.11.2
80.3 MAX.
6.8
7.55
12
1.75
Pin 1
Manufacturer
0...10˚
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Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.