2011-09-151
BC817UPN
5
4
6
3
2
1
NPN Silicon AF Transistor Array
• For AF stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated
NPN/PNP transistors in one package
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Tape loading orientation
SC74_Tape
123
456
W1s
Direction of Unreeling
Top View Marking on SC74 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
EHA07177
654
321
C1 B2 E2
C2B1E1
TR1 TR2
Type Marking Pin Configuration Package
BC817UPN 1Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 45 V
Collector-base voltage VCBO 50
Emitter-base voltage VEBO 5
Collector current IC500 mA
Peak collector current, tp ≤ 10 ms ICM 1000
Base current IB100
Peak base current IBM 200
Total power dissipation-
TS ≤ 115 °C
Ptot 330 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
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Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 105 K/W
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
V(BR)CEO 45 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 50 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5 - -
Collector-base cutoff current
VCB = 25 V, IE = 0
VCB = 25 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
50
µA
Emitter-base cutoff current
VEB = 4 V, IC = 0
IEBO - - 100 nA
DC current gain2)
IC = 100 mA, VCE = 1 V
IC = 300 mA, VCE = 1 V
hFE
160
100
250
-
400
-
-
Collector-emitter saturation voltage2)
IC = 500 mA, IB = 50 mA
VCEsat - - 0.7 V
Base emitter saturation voltage2)
IC = 500 mA, IB = 50 mA
VBEsat - - 1.2
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
fT- 170 - MHz
Collector-base capacitance
f = 1 MHz, VBE = 10 V
Ccb - 6 - pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb - 60 -
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2Pulse test: t < 300µs; D < 2%
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BC817UPN
DC current gain hFE = ƒ(IC)
VCE = 1 V
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
A
IC
1
10
2
10
3
10
hFE
105 °C
85 °C
65 °C
25 °C
-40 °C
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
0
10
EHP00223BC 817/818
CEsat
V
0.4 V 0.8
-1
10
0
10
1
3
10
5
5
Ι
C
mA
5
2
10
0.2 0.6
˚C
-50
25
˚C
150
˚C
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
0
10
EHP00222BC 817/818
BEsat
V
2.0 V 4.0
-1
100
101
3
10
5
5
Ι
CmA
5
2
10
1.0 3.0
˚C
-50
25
˚C
˚C
150
Collector cutoff current ICBO = ƒ(TA)
VCBO = 25 V
0
10
EHP00221BC 817/818
A
T
150
0
5
10
Ι
CBO nA
50 100
1
10
2
10
4
10
˚C
typ
max
103
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BC817UPN
Transition frequency fT = ƒ(IC)
VCE = parameter in V, f = 2 GHz
10
EHP00218BC 817/818
03
10mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
fMHz
Ι
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 2 4 6 8 10 12 14 16 V20
VCB/VEB
0
5
10
15
20
25
30
35
40
45
50
55
pF
65
CCB/CEB
CCB
CEB
Total power dissipation Ptot = ƒ(TS)
0 20 40 60 80 100 120 °C 150
TS
0
50
100
150
200
250
300
mW
400
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
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Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
Ptotmax/PtotDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
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BC817UPN
Package SC74
Package Outline
Foot Print
Standard Packing
0.5
0.95
1.9
2.9
546
321
1.1 MAX.
(0.35)
(2.25)
±0.2
2.9 B
0.2
+0.1
-0.05
0.35
Pin 1
marking
MB6x
0.95
1.9
0.15 -0.06
+0.1
1.6
10˚ MAX.
A
±0.1
2.5
0.25
10˚ MAX.
±0.1
±0.1
A0.2 M
0.1 MAX.
2.7
4
3.15
Pin 1
marking
8
0.2
1.15
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
Manufacturer
2005, June
Date code (Year/Month)
BCW66H
Type code
Pin 1 marking
Laser marking
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
2011-09-157
BC817UPN
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.