NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 100 Volt VCEO
* Gain of 20 at IC = 0.5 Amp
*P
tot=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL 2N6716 2N6717 2N6718 UNIT
Collector-Base Voltage VCBO 60 80 100 V
Collector-Emitter Voltage VCEO 60 80 100 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 2A
Continuous Collector Current IC1A
Power Dissipation at Tamb
= 25°C Ptot 1W
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL 2N6716 2N6717 2N6718 UNIT CONDITIONS.
MIN. MAX MIN. MAX MIN. MAX
Collector-Base
Breakdown Voltage
V(BR)CBO 60 80 100 V IC
=0.1mA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 60 80 100 V IC
=1mA, IB
=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO 555VI
E=1mA, IC
=0
Collector Cut-Off
Current
ICBO 1
1
1
µA
µA
µA
VCB=60V, IE=0
VCB=80V, IE=0
VCB=100V, IE=0
Emitter Cut-Off
Current
IEBO 111
µAVEB
=5V, IC
=0
Collector-Emitter
Saturation Voltage
VCE(sat) 0.5
0.35
0.5
0.35
0.5
0.35
VI
C
=250mA, IB
=10mA*
IC
=250mA,IB
=25mA*
Base-Emitter
Turn-On Voltage
VBE(on) 1.2 1.2 1.2 V IC=250mA, VCE=1V*
Static Forward
Current Transfer
Ratio
hFE 80
50
20
250
80
50
20
250
80
50
20
250
IC
=50mA, VCE
=1V*
IC
=250mA, VCE
=1V*
IC
=500mA, VCE
=1V*
Transition
Frequency
fT50 500 50 500 50 500 MHz IC
=50mA, VCE
=10V
Collector Base
Capacitance
CCB 30 30 30 pF VCE=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
E-Line
TO92 Compatible
2N6716
2N6717
2N6718
3-6
C
B
E
