P6KE6V8A - ON SEMICONDUCTOR

P6KE6V8(C)A – P6KE440(C)A

Taiwan Semiconductor

1 Version: B1910

600W Transient Voltage Suppressors

FEATURES

● Glass passivated junction

● 600W peak pulse power capability at 1.0ms

● Excellent clamping capability

● Low incremental surge resistance

● Fast response time: Typically

< 1.0ps from 0 V to BV for uni-directional,

5.0 ns for bidirectional

● Typical IR: 1.0μA above 10V

APPLICATIONS

● Devices for bipolar applications

● Bi-directional types use CA suffix

● Electrical characteristics apply in both directions

DO-15

COLOR BAND DENOTES CATHODE

ON UNIDIRECTIONAL DEVICES ONLY. NO

COLOR BAND ON BIDIRECTIONAL DEVICES.

ABSOLUTE MAXIMUM RATINGS

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.

The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

PARAMETER

SYMBOL

VALUE

UNIT

Peak pulse power dissipation tp=1ms

PPPM 600 W

Peak pulse current IPPM see table A

Power dissipation

.375 inch lead length at T

A

=75°C PD 5.0 W

Non-Repetitive Peak Forward Surge Current

Superimposed on Rated Load (JEDEC Method)(1) IFSM 100 A

Junction temperature TJ -65 to +175 °C

Storage temperature TSTG -65 to +175 °C

Note:

1. Measured on 8.3ms single half-sine wave; duty cycle = 4 pulses per minute maximum.

P6KE6V8(C)A – P6KE440(C)A

Taiwan Semiconductor

2 Version: B1910

ELECTRICAL SPECIFICATIONS

(TA = 25°C unless otherwise noted)

Uni-directional

Bi-directional (C)

Device

Reverse

Stand-Off

Voltage

VRWM

(V)

Breakdown

Voltage

VBR

(V)

Test

Current

IT

(mA)

Clamping

Voltage at

IPPM

VC(V)

Peak P

ulse

Current

IPPM (A)

Reverse

Leakage

Current at

VRWM

IR (μA) (2)

Temperature

Coefficient

VBR

(%/°C)

Min. Max.

P6KE6V8(C)A 5.80 6.45 7.14 10 10.5 57.1 1000 0.057

P6KE7V5(C)A 6.40 7.13 7.88 10 11.3 53.1 500 0.061

P6KE8V2(C)A 7.02 7.79 8.61 10 12.1 50 200 0.065

P6KE9V1(C)A 7.78 8.65 9.55 1 13.4 45 50 0.068

P6KE10(C)A 8.55 9.5 10.5 1 14.5 41 10 0.073

P6KE11(C)A 9.40 10.5 11.6 1 15.6 38 5 0.075

P6KE12(C)A 10.2 11.4 12.6 1 16.7 36 5 0.078

P6KE13(C)A 11.1 12.4 13.7 1 18.2 33 5 0.081

P6KE15(C)A 12.8 14.3 15.8 1 21.2 28 5 0.084

P6KE16(C)A 13.6 15.2 16.8 1 22.5 27 5 0.086

P6KE18(C)A 15.3 17.1 18.9 1 25.2 24 5 0.088

P6KE20(C)A 17.1 19 21 1 27.7 22 5 0.090

P6KE22(C)A 18.8 20.9 23.1 1 30.6 20 5 0.092

P6KE24(C)A 20.5 22.8 25.2 1 33.2 18.1 5 0.094

P6KE27(C)A 23.1 25.7 28.4 1 37.5 16.0 5 0.096

P6KE30(C)A 25.6 28.5 31.5 1 41.4 14.5 5 0.097

P6KE33(C)A 28.2 31.4 34.7 1 45.7 13.2 5 0.098

P6KE36(C)A 30.8 34.2 37.8 1 49.9 12.0 5 0.099

P6KE39(C)A 33.3 37.1 41 1 53.9 11.2 5 0.100

P6KE43(C)A 36.8 40.9 45.2 1 59.3 10.1 5 0.101

P6KE47(C)A 40.2 44.7 49.4 1 64.8 9.3 5 0.101

P6KE51(C)A 43.6 48.5 53.6 1 70.1 8.6 5 0.102

P6KE56(C)A 47.8 53.2 58.8 1 77.0 7.8 5 0.103

P6KE62(C)A 53.0 58.9 65.1 1 85.0 7.1 5 0.104

P6KE68(C)A 58.1 64.6 71.4 1 92.0 6.5 5 0.104

P6KE75(C)A 64.1 71.3 78.8 1 103 5.8 5 0.105

P6KE82(C)A 70.1 77.9 86.1 1 113 5.3 5 0.105

P6KE91(C)A 77.8 86.5 95.5 1 125 4.8 5 0.106

P6KE6V8(C)A – P6KE440(C)A

Taiwan Semiconductor

3 Version: B1910

ELECTRICAL SPECIFICATIONS

(TA = 25°C unless otherwise noted)

Uni-directional

Bi-directional (C)

Device

Reverse

Stand-Off

Voltage

VRWM

(V)

Breakdown

Voltage

VBR

(V)

Test

Current

IT

(mA)

Clamping

Voltage at

IPPM

VC(V)

Peak P

ulse

Current

IPPM (A)

Reverse

Leakage

Current at

VRWM

IR (μA) (2)

Temperature

Coefficient

VBR

(%/°C)

Min. Max.

P6KE100(C)A 85.5 95 105 1 137 4.4 5 0.106

P6KE110(C)A 94.0 105 116 1 152 4.0 5 0.107

P6KE120(C)A 102 114 126 1 165 3.6 5 0.107

P6KE130(C)A 111 124 137 1 179 3.4 5 0.107

P6KE150(C)A 128 143 158 1 207 2.9 5 0.108

P6KE160(C)A 136 152 168 1 219 2.7 5 0.108

P6KE170(C)A 145 162 179 1 234 2.6 5 0.108

P6KE180(C)A 154 171 189 1 246 2.4 5 0.108

P6KE200(C)A 171 190 210 1 274 2.2 5 0.108

P6KE220(C)A 185 209 231 1 328 1.9 5 0.108

P6KE250(C)A 214 237 263 1 344 1.8 5 0.110

P6KE300(C)A 256 285 315 1 414 1.5 5 0.110

P6KE350(C)A 300 332 368 1 482 1.3 5 0.110

P6KE400(C)A 342 380 420 1 548 1.1 5 0.110

P6KE440(C)A 376 418 462 1 602 1.0 5 0.110

Note:

2. .For bi-directional parts with VRWM < 10 V, the IR maximum limit is doubled.

P6KE6V8(C)A – P6KE440(C)A

Taiwan Semiconductor

4 Version: B1910

CHARACTERISTICS CURVES

(TA = 25°C unless otherwise noted)

Fig1. Peak Pulse Power Rating Curve

Fig2. Pulse Derating Curve

Fig3. Pulse Waveform

Fig4. Total Capacitance – Uni-directional

0.1

1

10

100

0.0001 0.001 0.01 0.1 1 10

PULSE POWER, KW

PULSE WIDTH, (ms)

0

25

50

75

100

125

0 25 50 75 100 125 150 175 200

PULSE POWER (%)

AMBIENT TEMPERATURE (°C)

10

100

1000

10000

1 10 100

REVERSE VOLTAGE (V)

f=1.0MHz

Vsig=50mVp-p

Measured at

Zero Bias

Measured at

Stand-Off

Voltage (V)

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

0

20

40

60

80

100

120

140

0 0.5 1 1.5 2 2.5 3

IPPM, PEAK PULSE CURRENT (%)

t, TIME (ms)

td

Peak value

IPPM

Rise time tr=10μs to 100%

Half value-IPPM/2

Pulse width(td) is defined

as the point where the peak

current decays to 50% of IPPM

10/1000μs, waveform

TOTAL CAPCAITANCE (pF)

P6KE6V8(C)A – P6KE440(C)A

Taiwan Semiconductor

5 Version: B1910

10

100

1000

10000

1 10 100

CJ, JUNCTION CAPACITANCE (pF) A

V(BR), BREAKDOWN VOLTAGE (V)

f=1.0MHz

Vsig=50mVp-p

VR=0

MEASURED at

STAND-OFF

VOLTAGE,Vwm

CHARACTERISTICS CURVES

(TA = 25°C unless otherwise noted)

Fig5. Steady State Power Derating Curve

Fig6. Non-Repetitive Surge Current

0

1

2

3

4

5

6

0 25 50 75 100 125 150 175 200

POWER DISSIPATION (W)

LEAD TEMPERATURE (°C)

10

100

1 10 100

PEAK FORWARD SURGE CURRENT(A)

NUMBER OF CYCLES at 60Hz

Unidirectional only

8.3ms single half sine-wave

JEDEC method

P6KE6V8(C)A – P6KE440(C)A

Taiwan Semiconductor

6 Version: B1910

PACKAGE OUTLINE DIMENSIONS

DO-15

DIM.

Unit (mm)

Min Max

A 2.60 3.60

B 0.70 0.90

C 25.40 -

D 5.80 7.60

E 25.40 -

NOTES: UNLESS OTHERWISE SPECIFIED

A) PACKAGE STANDARD REFERENCE:

JEDEC DO-204 VARIATION AC.

B) PLASTIC PACKAGE BODY.

C) ALL DIMENSIONS ARE IN MILLMETERS.

P6KE6V8(C)A – P6KE440(C)A

Taiwan Semiconductor

7 Version: B1910

Notice

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,

assumes no responsibility or liability for any errors or inaccuracies.

Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability

for application assistance or the design of Purchasers’ products.

Information contained herein is intended to provide a product description only. No license, express or implied, to

any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of

sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,

relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,

merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify TSC for any damages resulting from such improper use or sale.