IRF6602
2www.irf.com
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 20 ––– ––– SV
DS = 10V, ID = 8.8A
QgTotal Gate Charge Cont FET ––– 13 20 VGS = 5.0V, VDS = 10V, ID = 8.8A
QgTotal Gate Charge Sync FET ––– 11 ––– VGS = 5.0V, VDS < 100mV
Qgs1 Pre-Vth Gate-Source Charge ––– 3.5 ––– VDS = 16V, ID = 8.8A
Qgs2 Post-Vth Gate-Source Charge ––– 1.3 ––– nC
Qgd Gate to Drain Charge ––– 4.8 –––
Qsw Switch Charge (Qgs2 + Qgd)––– 6.1 –––
Qoss Output Charge ––– 19 ––– VDS = 16V, VGS = 0V
td(on) Turn-On Delay Time ––– 11 ––– VDD = 15V
trRise Time ––– 58 ––– ID = 8.8A
td(off) Turn-Off Delay Time ––– 15 ––– RG = 1.8 Ω
tfFall Time ––– 5.5 ––– VGS = 4.5V
Ciss Input Capacitance ––– 1420 ––– VGS = 0V
Coss Output Capacitance ––– 960 ––– VDS = 10V
Crss Reverse Transfer Capacitance ––– 100 ––– pF ƒ = 1.0MHz
Symbol Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
––– 0.83 1.2 V TJ = 25°C, IS = 8.8A, VGS = 0V
––– 0.65 ––– TJ = 125°C, IS = 8.8A, VGS = 0V
trr Reverse Recovery Time ––– 42 62 ns TJ = 25°C, IF = 8.8A, VR=15V
Qrr Reverse Recovery Charge ––– 51 77 nC di/dt = 100A/µs
trr Reverse Recovery Time ––– 43 64 ns TJ = 125°C, IF = 8.8A, VR=15V
Qrr Reverse Recovery Charge ––– 55 82 nC di/dt = 100A/µs
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 97 mJ
IAR Avalanche Current––– 8.8 A
Avalanche Characteristics
S
D
G
Diode Characteristics
11
88 A
VSD Diode Forward Voltage
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– VV
GS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
––– 10 1 3 VGS = 10V, ID = 11A
––– 14 1 9 VGS = 4.5V, ID = 8.8A
VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
––– ––– 20 µA VDS = 16V, VGS = 0V
––– ––– 125 VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS Drain-to-Source Leakage Current
RDS(on) Static Drain-to-Source On-Resistance mΩ