02/07/11
www.irf.com 1
HEXFET® Power MOSFET
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety
of other applications.
S
D
G
Description
AUTOMOTIVE GRADE
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
D2Pak
AUIRFZ44VZS
AUIRFZ44VZS
GDS
Gate Drain Source
S
D
G
D
Features
lAdvanced Process Technology
lUltra Low On-Resistance
l175°C Operating Temperature
lFast Switching
lRepetitive Avalanche Allowed up to Tjmax
lLead-Free, RoHS Compliant
lAutomotive Qualified *
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
V
(BR)DSS
60V
R
DS(on)
typ. 9.6mΩ
max. 12mΩ
I
D
57A
Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V A
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy (Thermally limited)
d
mJ
E
AS
(Tested ) Single Pulse Avalanche Energy Tested Value
h
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
g
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 1.64 °C/W
R
θJA
Junction-to-Ambient (PCB Mount)
i
––– 40
110
73
See Fig.12a, 12b, 15, 16
92
0.61
± 20
Max.
57
40
230
-55 to + 175
300 (1.6mm from case )
PD - 96354
AUIRFZ44VZS
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S
D
G
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Volta
g
e60––––––V
∆V
(BR)DSS
/
∆T
J
Breakdown Volta
g
e Temp. Coefficient ––– 0.061 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 9.6 12 m
Ω
V
GS(th)
Gate Threshold Volta
g
e 2.0 ––– 4.0 V
g
fs Forward Transconductance 25 ––– ––– V
I
DSS
Drain-to-Source Leaka
g
e Current ––– ––– 20
µ
A
––– ––– 250
I
GSS
Gate-to-Source Forward Leaka
g
e ––– ––– 200 nA
Gate-to-Source Reverse Leaka
g
e ––– ––– -200
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
Q
g
Total Gate Char
g
e ––– 43 65
Q
gs
Gate-to-Source Char
g
e ––– 11 ––– nC
Q
gd
Gate-to-Drain ("Miller") Char
g
e ––– 18 –––
t
d(on)
Turn-On Dela
y
Time –––14–––
t
r
Rise Time –––62–––
t
d(off)
Turn-Off Dela
y
Time –––35–––ns
t
f
Fall Time –––38–––
L
D
Internal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 ––– from packa
g
e
and center of die contact
C
iss
Input Capacitance ––– 1690 –––
C
oss
Output Capacitance ––– 270 –––
C
rss
Reverse Transfer Capacitance ––– 130 ––– pF
C
oss
Output Capacitance ––– 1870 –––
C
oss
Output Capacitance ––– 260 –––
C
oss
eff. Effective Output Capacitance ––– 510 –––
Diode Characteristics
Parameter Min. T
y
p. Max. Units
I
S
Continuous Source Current ––– ––– 57
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 230
(Body Diode)
c
V
SD
Diode Forward Volta
g
e ––– ––– 1.3 V
t
rr
Reverse Recover
y
Time ––– 23 35 ns
Q
rr
Reverse Recover
y
Char
g
e ––– 17 26 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
V
DS
= 25V, I
D
= 34A
I
D
= 34A
V
DS
= 48V
V
GS
= 20V
V
GS
= -20V
Conditions
V
GS
= 10V
e
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 48V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 48V
f
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 34A, V
GS
= 0V
e
T
J
= 25°C, I
F
= 34A, V
DD
= 30V
di/dt = 100A/
µ
s
e
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 34A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 60V, V
GS
= 0V
V
DS
= 60V, V
GS
= 0V, T
J
= 125°C
V
GS
= 10V
e
V
DD
= 30V
I
D
= 34A
R
G
= 12 Ω
Notes through are on page 3
AUIRFZ44VZS
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Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.12mH
RG = 25Ω, IAS = 34A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS .
Notes:
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production, starting TJ = 25°C, L = 0.12mH
RG = 25Ω, IAS = 34A, VGS =10V.
This is applied to D2Pak, when mounted on 1" square PCB (FR-
4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions to AEC-Q101 requirements are noted in the qualification report.
††† Highest passing voltage
Qualification Information
†
D
2
PAK MSL1
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
Charged Device
Model
Class C5(+/- 1125V )
†††
(per AEC-Q101-005)
Moisture Sensitivity Level
RoHS Compliant Yes
ESD
Machine Model Class M4(+/- 425V )
†††
(per AEC-Q101-002)
Human Body Model Class H1B(+/- 1000V )
†††
(per AEC-Q101-001)
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Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance
Vs. Drain Current
0 102030405060
ID, Drain-to-Source Current (A)
0
10
20
30
40
50
60
Gfs, Forward Transconductance (S)
TJ = 25°C
TJ = 175°C
VDS = 15V
380µs PULSE WIDTH
4.0 5.0 6.0 7.0 8.0 9.0
VGS, Gate-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (Α)
VDS = 25V
60µs PULSE WIDTH
TJ = 25°C
TJ = 175°C
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
60µs PULSE WIDTH
Tj = 25°C4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
60µs PULSE WIDTH
Tj = 175°C
4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
AUIRFZ44VZS
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
0
500
1000
1500
2000
2500
3000
C, Capacitance (pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0 102030405060
QG Total Gate Charge (nC)
0
4
8
12
16
20
VGS, Gate-to-Source Voltage (V)
VDS= 48V
VDS= 30V
VDS= 12V
ID= 34A
FOR TEST CIRCUIT
SEE FIGURE 13
0.2 0.6 1.0 1.4 1.8
VSD, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
1 10 100 1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Normalized On-Resistance
Vs. Temperature
25 50 75 100 125 150 175
TJ , Junction Temperature (°C)
0
10
20
30
40
50
60
ID , Drain Current (A)
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 34A
VGS = 10V
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.960 0.00044
0.680 0.00585
τJ
τJ
τ1
τ1
τ2
τ2
R1
R1R2
R2
τ
τC
Ci i/Ri
Ci= τi/Ri
AUIRFZ44VZS
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Q
G
Q
GS
Q
GD
V
G
Charge
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 14. Threshold Voltage Vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
25 50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
0
50
100
150
200
250
300
EAS, Single Pulse Avalanche Energy (mJ)
I D
TOP 3.8A
5.0A
BOTTOM 34A
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
1.0
2.0
3.0
4.0
VGS(th) Gate threshold Voltage (V)
ID = 250µA
1K
VCC
DUT
0
L
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Fig 15. Typical Avalanche Current Vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
1000
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
20
40
60
80
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = 34A
AUIRFZ44VZS
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Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P. W .
Period
* V
GS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
AUIRFZ44VZS
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D2Pak (TO-263AB) Part Marking Information
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
YWWA
XX or XX
Part Number
IR Logo
Lot Code
AUFZ44VZS
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
AUIRFZ44VZS
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3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
D2Pak Tape & Reel Infomation
AUIRFZ44VZS
12 www.irf.com
Ordering Information
Base part Package Type Complete Part Number
Form Quantity
AUIRFZ44VZS D2Pak Tube 50 AUIRFZ44VZS
Tape and Reel Left 800 AUIRF44VZSTRL
Tape and Reel Right 800 AUIRFZ44VZSTRR
Standard Pack
AUIRFZ44VZS
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IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
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Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or
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the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product
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Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements
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