SEMIPACK®1
Thyristor / Diode Modules
SKKT 105
SKKH 105
Features
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Typical Applications
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SKKT SKKH
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#66 966 .:: 46#;69%
<66 !66 .::+ 46#;6!
=66 566 .::+ 46#;65 .:: 46#;65%
4"66 4$66 .::+ 46#;4$ .:: 46#;4$
4#66 4966 .::+ 46#;49 .:: 46#;49
4<66 4!66 .::+ 46#;4! .:: 46#;4!
4=66 4566 .::+ 46#;45 .:: 46#;45
Symbol Conditions Values Units
2+*/ 4567 +3 5# (466) 8&7 46! (<5 ) *
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2+, 3 $# 8&7 0E3 "" D7 ; "66 ; !66 *
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2E+ +, 3 $# 8&7 4#6 *
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0(H) 4567 ; 6" ; 64# :;@
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0(H) ; 6$ ; 64 :;@
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SKKT 105, SKKH 105 THYRISTOR BRIDGE,SCR,BRIDGE
1 13-10-2004 NOS © by SEMIKRON
Fig. 1L Power dissipation per thyristor vs. on-state current Fig. 1R Power dissipation per thyristor vs. ambient temp.
Fig. 2L Power dissipation per module vs. rms current Fig. 2R Power dissipation per module vs. case temp.
Fig. 3L Power dissipation of two modules vs. direct current Fig. 3R Power dissipation of two modules vs. case temp.
RECTIFIER,DIODE,THYRISTOR,MODULE
2 13-10-2004 NOS © by SEMIKRON
Fig. 4L Power dissipation of three modules vs. direct and rms current Fig. 4R Power dissipation of three modules vs. case temp.
Fig. 5 Recovered charge vs. current decrease Fig. 6 Transient thermal impedance vs. time
Fig. 7 On-state characteristics Fig. 8 Surge overload current vs. time
SKKT 105, SKKH 105 THYRISTOR BRIDGE,SCR,BRIDGE
3 13-10-2004 NOS © by SEMIKRON
Fig. 9 Gate trigger characteristics
Dimensions in mm
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This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
RECTIFIER,DIODE,THYRISTOR,MODULE
4 13-10-2004 NOS © by SEMIKRON
