Philips Semiconductors High-speed diode FEATURES e Very small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA. * e APPLICATIONS High-speed switching in e.g. surface mounted circuits. Product specification a BAS16W I DESCRIPTION PINNING The BAS16W is a high-speed PIN DESCRIPTION switching diode fabricated in planar 1 technology, and encapsulated in the anode very small plastic SMD SOT323 2 not connected package. 3 cathode 2 2 1 nc. 3 3 MAMO95 Top view Marking code: AG. Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES tn accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VrRM repetitive peak reverse voltage - 85 Vv Vr continuous reverse voltage - 75 Vv IF continuous forward current see Fig.2; note 1 - 175 mA lram repetitive peak forward current - 500 mA lesm non-repetitive peak forward current | square wave; T| = 25 C prior to surge; see Fig.4 t=1ps - 4 A t=1ms - 1 A t=is - 05 |A Prot total power dissipation Tamb = 25 C; note 1 ~ 200 mw Tstg storage temperature -65 +150 C Tj junction temperature - 150 C Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 10 1-103 Philips Semiconductors Product specification High-speed diode BAS16W ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Ve forward voltage see Fig.3 Ip =1mA - 715 mV lr =10mA - 855 mV Ip = 50 mA - 1 Vv lp = 150 mA - 1.25 1V Ir reverse current see Fig.5 VR =25V - 30 nA Va=75V - 1 pA Vp = 25 V; Tj = 150 C - 30 pA Vr = 75 V; T= 150C; - 50 HA Cg diode capacitance f = 1 MHz; Vp = 0; see Fig.6 - 1.5 |pF tr reverse recovery time when switched from t- = 10 mA to - 4 ns IR = 10 mA; Ry = 100 QO; measured at Ip = 1 mA; see Fig.7 Vir forward recovery voltage when switched from Ir = 10 mA; - 1.75 |V t, = 20 ns; see Fig.8 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE | UNIT Reh j-tp thermal resistance from junction to tie-point 300 K/W Rin -a thermal resistance from junction. to ambient | note 1 625 K/AW Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 10 Philips Semiconductors Product specification High-speed diode BAS16W GRAPHICAL DATA 200 MGA887 {mA) 100 10 Q 0 Tamb (C) 206 Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. le (mA) 200 100 G0 j Ve (vy 2 (1) Tj = 150 C; typical values. (2) 1) = 25 C; typical values. (3) T= 25 C; maximum values. Fig.3 Forward current as a function of forward voltage. lFgm (A) 10 1071 1 10 Based on square wave currents. Tj = 25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 10 Philips Semiconductors Product specification High-speed diode BAS16W T; (c) 200 Fig.5 Reverse current as a function of junction temperature. 0.8 (pF) 0.6 0.4 0.2 2 16 VR) f=1 MHz; T= 25C. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 1996 Sep 10 Philips Semiconductors Product specification High-speed diode BAS16W CTT q { tr tp- | et : 10% Rg = 50 2 | a A | ocSttE Soe VeVaticxRg R= 500 | : MGAGEt A = input signal output signal (1) In=ima. Fig.7 Reverse recovery voltage test circuit and waveforms. i, 1kQ 450 Q ~ 1 Vv 90% Rg=50 9 OSCILLOSCOPE Vir J | R,=50 2 10% MGAgE2 ry t t ty +_. ty ~1 input output signal signal Fig.8 Forward recovery voltage test circuit and waveforms. 1996 Sep 10 1-107