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use http://www.nexperia.com
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
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1. Product profile
1.1 General description
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a small
SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS5420D.
1.2 Features
nVery low collector-emitter saturation resistance
nUltra low collector-emitter saturation voltage
n4 A continuous collector current
nUp to 15 A peak current
nHigh efficiency due to less heat generation
1.3 Applications
nPower management functions
nCharging circuits
nDC-to-DC conversion
nMOSFET gate driving
nPower switches (e.g. motors, fans)
nThin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Pulse test: tp≤300 µs; δ≤0.02.
PBSS4420D
20 V, 4 A NPN low VCEsat (BISS) transistor
Rev. 02 — 24 September 2008 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 20 V
ICcollector current [1] --4A
ICM peak collector current single pulse;
tp≤1ms --15A
RCEsat collector-emitter saturation
resistance IC=4A;
IB= 400 mA [2] - 5070mΩ
PBSS4420D_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 24 September 2008 2 of 14
NXP Semiconductors PBSS4420D
20 V, 4 A NPN low VCEsat (BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 collector
2 collector
3 base
4 emitter
5 collector
6 collector
132
4
56
sym014
1, 2, 5, 6
4
3
Table 3. Ordering information
Type number Package
Name Description Version
PBSS4420D SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457
Table 4. Marking codes
Type number Marking code
PBSS4420D D4
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 20 V
VCEO collector-emitter voltage open base - 20 V
VEBO emitter-base voltage open collector - 5 V
ICcollector current [1] -4A
ICM peak collector current single pulse;
tp≤1ms -15A
IBbase current - 0.8 A
IBM peak base current single pulse;
tp≤1ms -2A
Ptot total power dissipation Tamb ≤25 °C[2] - 360 mW
[3] - 600 mW
[4] - 750 mW
[1] - 1.1 W
[2][5] - 2.5 W
PBSS4420D_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 24 September 2008 3 of 14
NXP Semiconductors PBSS4420D
20 V, 4 A NPN low VCEsat (BISS) transistor
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[5] Operated under pulsed conditions: Duty cycle δ≤10 % and pulse width tp≤10 ms.
Tjjunction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm2
(3) FR4 PCB, mounting pad for collector 1 cm2
(4) FR4 PCB, standard footprint
Fig 1. Power derating curves
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
(1)
Tamb (°C)
−75 17512525 75−25
006aaa270
800
400
1200
1600
Ptot
(mW)
0
(2)
(4)
(3)
PBSS4420D_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 24 September 2008 4 of 14
NXP Semiconductors PBSS4420D
20 V, 4 A NPN low VCEsat (BISS) transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[5] Operated under pulsed conditions: Duty cycle δ≤10 % and pulse width tp≤10 ms.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air [1] - - 350 K/W
[2] - - 208 K/W
[3] - - 160 K/W
[4] - - 113 K/W
[1][5] --50K/W
Rth(j-sp) thermal resistance from
junction to solder point --45K/W
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa271
10
1
102
103
Zth(j-a)
(K/W)
10−1
10−51010−2
10−4102
10−1tp (s)
10−3103
1
duty cycle =
10.75
0.5 0.33
0.2
0.1
0.05
0.02
0.01
0
PBSS4420D_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 24 September 2008 5 of 14
NXP Semiconductors PBSS4420D
20 V, 4 A NPN low VCEsat (BISS) transistor
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for collector 6 cm2
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa272
10
1
102
103
Zth(j-a)
(K/W)
10−1
10−51010−2
10−4102
10−1tp (s)
10−3103
1
duty cycle =
10.75
0.5 0.33
0.2
0.1
0.05
0.02
0.01
0
006aaa273
10
1
102
103
Zth(j-a)
(K/W)
10−1
10−51010−2
10−4102
10−1tp (s)
10−3103
1
duty cycle =
10.75
0.5 0.33
0.2
0.1
0.05
0.02
0.01
0
PBSS4420D_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 24 September 2008 6 of 14
NXP Semiconductors PBSS4420D
20 V, 4 A NPN low VCEsat (BISS) transistor
7. Characteristics
[1] Pulse test: tp≤300 µs; δ≤0.02.
Table 7. Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off
current VCB =20V; I
E= 0 A - - 0.1 µA
VCB =20V; I
E=0A;
Tj= 150 °C--50µA
ICES collector-emitter cut-off
current VCE =20V; V
BE =0V - - 0.1 µA
IEBO emitter-base cut-off
current VEB =5V; I
C= 0 A - - 0.1 µA
hFE DC current gain VCE =2V; I
C= 0.5 A 300 450 -
VCE =2V; I
C=1A [1] 300 430 -
VCE =2V; I
C=2A [1] 250 400 -
VCE =2V; I
C=4A [1] 200 310 -
VCE =2V; I
C=6A [1] 100 230 -
VCEsat collector-emitter
saturation voltage IC= 0.5 A; IB= 50 mA - 30 50 mV
IC= 1 A; IB= 50 mA - 60 90 mV
IC= 2 A; IB= 200 mA - 110 150 mV
IC= 4 A; IB= 400 mA [1] - 200 280 mV
IC= 6 A; IB= 600 mA [1] - 300 420 mV
RCEsat collector-emitter
saturation resistance IC= 4 A; IB= 400 mA [1] - 5070mΩ
VBEsat base-emitter saturation
voltage IC= 0.5 A; IB= 50 mA - 0.79 0.85 V
IC= 1 A; IB= 50 mA - 0.81 0.9 V
IC= 1 A; IB= 100 mA [1] - 0.83 1 V
IC= 4 A; IB= 400 mA [1] - 1.0 1.1 V
VBEon base-emitter turn-on
voltage VCE =2V; I
C= 2 A - 0.79 1 V
tddelay time VCC = 12.5 V; IC=3A;
IBon = 0.15 A;
IBoff =−0.15 A
-12-ns
trrise time - 36 - ns
ton turn-on time - 48 - ns
tsstorage time - 230 - ns
tffall time - 50 - ns
toff turn-off time - 280 - ns
fTtransition frequency VCE =10V; I
C= 0.1 A;
f = 100 MHz - 100 - MHz
Cccollector capacitance VCB =10V;I
E=i
e=0A;
f=1MHz -60-pF
PBSS4420D_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 24 September 2008 7 of 14
NXP Semiconductors PBSS4420D
20 V, 4 A NPN low VCEsat (BISS) transistor
VCE =2V
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
Tamb =25°C
Fig 5. DC current gain as a function of collector
current; typical values Fig 6. Collector current as a function of
collector-emitter voltage; typical values
VCE =2V
(1) Tamb =−55 °C
(2) Tamb =25°C
(3) Tamb = 100 °C
IC/IB=20
(1) Tamb =−55 °C
(2) Tamb =25°C
(3) Tamb = 100 °C
Fig 7. Base-emitter voltage as a function of collector
current; typical values Fig 8. Base-emitter saturation voltage as a function
of collector current; typical values
IC (mA)
10−1105
104
103
110
2
10
006aaa328
400
600
200
800
1000
hFE
0
(1)
(2)
(3)
VCE (V)
0 2.01.60.8 1.20.4
006aaa334
4
2
6
10
8
IC
(A)
0
IB (mA) = 80
72
64
56
48
40
32
24
16
8
IC (mA)
10−1105
104
103
110
2
10
006aaa329
0.8
0.4
0.2
0.6
1.0
1.4
1.2
VBE
(V)
0
(1)
(2)
(3)
IC (mA)
10−1105
104
103
110
2
10
006aaa332
VBEsat
(V)
1.1
0.9
0.7
0.5
0.3
1.3
1.5
0.1
(1)
(2)
(3)
PBSS4420D_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 24 September 2008 8 of 14
NXP Semiconductors PBSS4420D
20 V, 4 A NPN low VCEsat (BISS) transistor
IC/IB=20
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
Tamb =25°C
(1) IC/IB= 100
(2) IC/IB=50
(3) IC/IB=10
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
IC/IB=20
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
Tamb =25°C
(1) IC/IB= 100
(2) IC/IB=50
(3) IC/IB=10
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
006aaa330
10−2
10−1
1.0
10
VCEsat
(V)
10−3
IC (mA)
10−1105
104
103
110
2
10
(1)
(2)
(3)
006aaa331
10−2
10−1
1
10
VCEsat
(V)
10−3
IC (mA)
10−1105
104
103
110
2
10
(1)
(2)
(3)
006aaa335
10−1
1
10
102
RCEsat
(Ω)
10−2
IC (mA)
10−1105
104
103
110
2
10
(3)
(1) (2)
1
10−1
102
10
103
RCEsat
(Ω)
10−2
006aaa333
IC (mA)
10−1105
104
103
110
2
10
(1)
(2)
(3)
PBSS4420D_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 24 September 2008 9 of 14
NXP Semiconductors PBSS4420D
20 V, 4 A NPN low VCEsat (BISS) transistor
8. Test information
Fig 13. BISS transistor switching time definition
VCC = 12.5 V; IC= 3 A; IBon = 0.15 A; IBoff =−0.15 A
Fig 14. Test circuit for switching times
006aaa003
IBon (100 %)
IB
input pulse
(idealized waveform)
IBoff
90 %
10 %
IC (100 %)
IC
tdton
90 %
10 %
tr
output pulse
(idealized waveform)
tf
t
ts
toff
RC
R2
R1
DUT
mlb826
Vo
RB(probe)
450 Ω
(probe)
450 Ω
oscilloscope oscilloscope
VBB
VI
VCC
PBSS4420D_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 24 September 2008 10 of 14
NXP Semiconductors PBSS4420D
20 V, 4 A NPN low VCEsat (BISS) transistor
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
Fig 15. Package outline SOT457 (SC-74)
04-11-08Dimensions in mm
3.0
2.5 1.7
1.3
3.1
2.7
pin 1 index
1.9
0.26
0.10
0.40
0.25
0.95
1.1
0.9
0.6
0.2
132
4
56
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
PBSS4420D SOT457 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135
4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165
PBSS4420D_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 24 September 2008 11 of 14
NXP Semiconductors PBSS4420D
20 V, 4 A NPN low VCEsat (BISS) transistor
11. Soldering
Fig 16. Reflow soldering footprint SOT457 (SC-74)
Fig 17. Wave soldering footprint SOT457 (SC-74)
solder lands
solder resist
occupied area
solder paste
sot457_fr
3.45
1.95
2.8253.3
0.45
(6×)0.55
(6×)
0.7
(6×)
0.8
(6×)2.4
0.95
0.95
Dimensions in mm
sot457_fw
5.3
5.05
1.45
(6×)
0.45
(2×)
1.5
(4×)
2.85
1.475
1.475 solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
PBSS4420D_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 24 September 2008 12 of 14
NXP Semiconductors PBSS4420D
20 V, 4 A NPN low VCEsat (BISS) transistor
12. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PBSS4420D_2 20080924 Product data sheet - PBSS4420D_1
Modifications: •The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•Legal texts have been adapted to the new company name where appropriate.
•Figure 7: amended
•Section 11 “Soldering”: added
•Section 13 “Legal information”: updated
PBSS4420D_1 20050421 Product data sheet - -
PBSS4420D_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 24 September 2008 13 of 14
NXP Semiconductors PBSS4420D
20 V, 4 A NPN low VCEsat (BISS) transistor
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors PBSS4420D
20 V, 4 A NPN low VCEsat (BISS) transistor
© NXP B.V. 2008. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 24 September 2008
Document identifier: PBSS4420D_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
10 Packing information. . . . . . . . . . . . . . . . . . . . . 10
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
14 Contact information. . . . . . . . . . . . . . . . . . . . . 13
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
