D5SBA10 ~ D5SBA60 SILICON BRIDGE RECTIFIERS
PRV : 100 ~ 600 Volts
Io : 6 Amperes
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Very good heat dissipation
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RBV25
Dimensions in millimeters
C3 4.9 ± 0.2
3.9 ± 0.2
∅ 3.2 ± 0.1
11 ± 0.2
17.5 ± 0.5
20
0.3
0.7 ± 0.1
1.0 ± 0.1
2.0 ± 0.2
30 ± 0.3
7.5
±0.2
10
±0.2
7.5
±0.2
13.5 ± 0.3
Rating at 25°C ambient temperature unless otherwise specified.
SYMBOLD5SBA10D5SBA20D5SBA40D5SBA60UNIT
Maximum Reverse VoltageVRM 100200400600V
Maximum Average Forward Current 6 (With heatsink, Tc = 110°C)
(50Hz Sine wave, R-load) 2.8 (Without heatsink, Ta = 25°C)
Maximum Peak Forward Surge Current, Tj = 25°C
(50Hz sine wave, Non-repetitive 1 cycle peak value)
Current Squared Time at 1ms ≤ t < 10 ms, Tc=25°CI2t60 A2S
Maximum Forward Voltage per Diode at IF = 3.0 AVF1.05V
Maximum DC Reverse Current, VR=VRM
( Pulse measurement, Rating of per diode)
Maximum Thermal Resistance, Junction to case RθJC 3.4 (With heatsink) °C/W
Maximum Thermal Resistance, Junction to Ambient RθJA 26 (Without heatsink) °C/W
Operating Junction TemperatureTJ150 °C
Storage Temperature RangeTSTG - 40 to + 150 °C
Page 1 of 2Rev. 02 : March 25, 2005
IR10 µA
RATING
IFSM 120A
IF(AV) A
* Pb / RoHS Free