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ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FGH20N60SFDTU_F085 600 V, 20 A Field Stop IGBT Features * * * * * * * General Description High Current Capability Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 20A High Input Impedance Fast Switching RoHS Compliant Qualified to Automotive Requirements of AEC-Q101 Using Novel Field Stop IGBT Technology, Fairchild's new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Applications * Automotive chargers, Converters, High Voltage Auxiliaries * Inverters, PFC, UPS E C C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol VCES VGES Description Ratings Unit Collector to Emitter Voltage 600 V Gate to Emitter Voltage 20 Transient Gate-to-Emitter Voltage 30 @ TC = 25oC Collector Current IC Collector Current ICM (1) PD Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation V 40 A @ TC = 100oC 20 A @ TC = 25oC 60 A @ TC = 25oC 165 W @ TC = 100oC 66 W TJ Operating Junction Temperature -55 to +150 oC Tstg Storage Temperature Range -55 to +150 oC TL Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds 300 oC Typ. Unit Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter RJC(IGBT) Thermal Resistance, Junction to Case 0.76 oC/W RJC(Diode) Thermal Resistance, Junction to Case 2.51 oC/W RJA Thermal Resistance, Junction to Ambient 40 oC/W (c)2015 Fairchild Semiconductor Corporation FGH20N60SFDTU_F085 Rev. 1.0 1 www.fairchildsemi.com FGH20N60SFDTU_F085 -- 600 V, 20 A Field Stop IGBT April 2015 Part Number Top Mark FGH20N60SFDTU_F085 FGH20N60SFD Package Packing Method Reel Size Tape Width TO-247 Electrical Characteristics of the IGBT Symbol Parameter Tube N/A Quantity N/A 30 TC = 25C unless otherwise noted Test Conditions Min. Typ. Max. Unit 600 - - V - 0.6 - V/oC Off Characteristics BVCES TJ Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A Temperature Coefficient of Breakdown VGE = 0 V, IC = 250 A Voltage ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - 400 nA IC = 250 A, VCE = VGE BVCES On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 4.0 4.6 6.5 V IC = 20 A, VGE = 15 V - 2.2 2.8 V IC = 20 A, VGE = 15 V, TC = 125oC - 2.4 - V - 985 - pF VCE = 30 V, VGE = 0 V, f = 1 MHz - 110 - pF - 40 - pF - 13 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time - 18 - ns td(off) Turn-Off Delay Time - 90 - ns tf Fall Time - 20 48 ns Eon Turn-On Switching Loss - 0.43 - mJ VCC = 400 V, IC = 20 A, RG = 10 , VGE = 15 V, Inductive Load, TC = 25oC Eoff Turn-Off Switching Loss - 0.13 - mJ Ets Total Switching Loss - 0.56 - mJ td(on) Turn-On Delay Time - 13 - ns tr Rise Time - 16 - ns - 95 - ns - 50 - ns td(off) Turn-Off Delay Time tf Fall Time VCC = 400 V, IC = 20 A, RG = 10 , VGE = 15 V, Inductive Load, TC = 125oC Eon Turn-On Switching Loss - 0.53 - mJ Eoff Turn-Off Switching Loss - 0.24 - mJ Ets Total Switching Loss - 0.77 - mJ Qg Total Gate Charge - 66 - nC Qge Gate to Emitter Charge - 7 - nC Qgc Gate to Collector Charge - 33 - nC (c)2015 Fairchild Semiconductor Corporation FGH20N60SFDTU_F085 Rev. 1.0 VCE = 400 V, IC = 20 A, VGE = 15 V 2 www.fairchildsemi.com FGH20N60SFDTU_F085 -- 600 V, 20 A Field Stop IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge TC = 25C unless otherwise noted Test Conditions IF = 10 A FGH20N60SFDTU_F085 Rev. 1.0 Typ. Max TC = - 1.9 2.5 TC = 125oC - 1.7 - - 40 - - 180 - - 70 - - 495 - TC = 25oC IF =10 A, diF/dt = 200 A/s (c)2015 Fairchild Semiconductor Corporation Min. 25oC TC = TC = 25oC TC = 3 125oC 125oC Unit V ns nC www.fairchildsemi.com FGH20N60SFDTU_F085 -- 600 V, 20 A Field Stop IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics Figure 3. Typical Saturation Voltage Characteristics Figure 4. Transfer Characteristics Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 6. Saturation Voltage vs. VGE (c)2015 Fairchild Semiconductor Corporation FGH20N60SFDTU_F085 Rev. 1.0 4 www.fairchildsemi.com FGH20N60SFDTU_F085 -- 600 V, 20 A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics Figure 11. SOA Characteristics (c)2015 Fairchild Semiconductor Corporation FGH20N60SFDTU_F085 Rev. 1.0 Figure 12. Turn-on Characteristics vs. Gate Resistance 5 www.fairchildsemi.com FGH20N60SFDTU_F085 -- 600 V, 20 A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current Figure 15. Turn-off Characteristics vs. Collector Current Figure 16. Switching Loss vs. Gate Resistance Figure 17. Switching Loss vs. Collector Current (c)2015 Fairchild Semiconductor Corporation FGH20N60SFDTU_F085 Rev. 1.0 Figure 18. Turn off Switching SOA Characteristics 6 www.fairchildsemi.com FGH20N60SFDTU_F085 -- 600 V, 20 A Field Stop IGBT Typical Performance Characteristics FGH20N60SFDTU_F085 -- 600 V, 20 A Field Stop IGBT Typical Performance Characteristics Figure 19. Forward Characteristics Figure 20. Reverse Current Figure 21. Stored Charge Figure 22. Reverse Recovery Time Figure 23.Transient Thermal Impedance of IGBT PDM t1 (c)2015 Fairchild Semiconductor Corporation FGH20N60SFDTU_F085 Rev. 1.0 7 t2 www.fairchildsemi.com FGH20N60SFDTU_F085 -- 600 V, 20 A Field Stop IGBT Mechanical Dimensions Figure 24. TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003 (c)2015 Fairchild Semiconductor Corporation FGH20N60SFDTU_F085 Rev. 1.0 8 www.fairchildsemi.com AccuPowerTM AttitudeEngineTM Awinda(R) AX-CAP(R)* BitSiCTM Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM DEUXPEED(R) Dual CoolTM EcoSPARK(R) EfficentMaxTM ESBCTM Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FETBenchTM FPSTM F-PFSTM FRFET(R) Global Power ResourceSM GreenBridgeTM Green FPSTM Green FPSTM e-SeriesTM GmaxTM GTOTM IntelliMAXTM ISOPLANARTM Marking Small Speakers Sound Louder and BetterTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MicroPak2TM MillerDriveTM MotionMaxTM MotionGrid(R) MTi(R) MTx(R) MVN(R) mWSaver(R) OptoHiTTM OPTOLOGIC(R) OPTOPLANAR(R) (R)* (R) Power Supply WebDesignerTM PowerTrench(R) PowerXSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW/W/kW at a timeTM SignalWiseTM SmartMaxTM SMART STARTTM Solutions for Your SuccessTM SPM(R) STEALTHTM SuperFET(R) SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOS(R) SyncFETTM Sync-LockTM TinyBoost(R) TinyBuck(R) TinyCalcTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM TranSiCTM TriFault DetectTM TRUECURRENT(R)* SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM VoltagePlusTM XSTM XsensTM TM *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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