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©2015 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FGH20N60SFDTU_F085 Rev. 1.0
FGH20N60SFDTU_F085 — 600 V, 20 A Field Stop IGBT
April 2015
Absolute Maximum Ratings
Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 600 V
VGES
Gate to Emitter Voltage 20 V
Transient Gate-to-Emitter Voltage 30
IC
Collector Current @ TC = 25oC 40 A
Collector Current @ TC = 100oC 20 A
ICM (1) Pulsed Collector Current
@ TC = 25oC 60 A
PD
Maximum Power Dissipation @ TC = 25oC 165 W
Maximum Power Dissipation @ TC = 100oC 66 W
TJ Operating Junction Temperature -55 to +150 oC
Tstg Storage Temperature Range -55 to +150 oC
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 oC
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Parameter Typ. Unit
RJC(IGBT) Thermal Resistance, Junction to Case 0.76 oC/W
RJC(Diode) Thermal Resistance, Junction to Case 2.51 oC/W
RJA Thermal Resistance, Junction to Ambient 40 oC/W
FGH20N60SFDTU_F085
600 V, 20 A Field Stop IGBT
G
E
C
E
C
G
COLLECTOR
(FLANGE)
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 20A
• High Input Impedance
• Fast Switching
• RoHS Compliant
• Qualified to Automotive Requirements of AEC-Q101
Applications
• Automotive chargers, Converters, High Voltage Auxiliaries
• Inverters, PFC, UPS
•
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Automo-
tive Chargers, Inverter, and other applications where low con-
duction and switching losses are essential.
FGH20N60SFDTU_F085 — 600 V, 20 A Field Stop IGBT
©2015 Fairchild Semiconductor Corporation 2www.fairchildsemi.com
FGH20N60SFDTU_F085 Rev. 1.0
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FGH20N60SFDTU_F085 FGH20N60SFD TO-247 Tube N/A N/A 30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A 600 - - V
BVCES
TJ
Temperature Coefficient of Breakdown
Voltage VGE = 0 V, IC = 250 A- 0.6 - V/oC
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 250 A, VCE = VGE 4.0 4.6 6.5 V
VCE(sat) Collector to Emitter Saturation Voltage
IC = 20 A, VGE = 15 V - 2.2 2.8 V
IC = 20 A, VGE = 15 V,
TC = 125oC- 2.4 - V
Dynamic Characteristics
Cies Input Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
- 985 - pF
Coes Output Capacitance - 110 - pF
Cres Reverse Transfer Capacitance - 40 - pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 400 V, IC = 20 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 25oC
- 13 - ns
trRise Time - 18 - ns
td(off) Turn-Off Delay Time - 90 - ns
tfFall Time - 20 48 ns
Eon Turn-On Switching Loss - 0.43 - mJ
Eoff Turn-Off Switching Loss - 0.13 - mJ
Ets Total Switching Loss - 0.56 - mJ
td(on) Turn-On Delay Time
VCC = 400 V, IC = 20 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 125oC
- 13 - ns
trRise Time - 16 - ns
td(off) Turn-Off Delay Time - 95 - ns
tfFall Time - 50 - ns
Eon Turn-On Switching Loss - 0.53 - mJ
Eoff Turn-Off Switching Loss - 0.24 - mJ
Ets Total Switching Loss - 0.77 - mJ
QgTotal Gate Charge
VCE = 400 V, IC = 20 A,
VGE = 15 V
- 66 - nC
Qge Gate to Emitter Charge - 7 - nC
Qgc Gate to Collector Charge - 33 - nC
FGH20N60SFDTU_F085 — 600 V, 20 A Field Stop IGBT
©2015 Fairchild Semiconductor Corporation 3www.fairchildsemi.com
FGH20N60SFDTU_F085 Rev. 1.0
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max Unit
VFM Diode Forward Voltage IF = 10 A TC = 25oC - 1.9 2.5 V
TC = 125oC - 1.7 -
trr Diode Reverse Recovery Time
IF =10 A, diF/dt = 200 A/s
TC = 25oC - 40 - ns
TC = 125oC - 180 -
Qrr Diode Reverse Recovery Charge TC = 25oC - 70 - nC
TC = 125oC - 495 -
FGH20N60SFDTU_F085 — 600 V, 20 A Field Stop IGBT
©2015 Fairchild Semiconductor Corporation 4www.fairchildsemi.com
FGH20N60SFDTU_F085 Rev. 1.0
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
FGH20N60SFDTU_F085 — 600 V, 20 A Field Stop IGBT
©2015 Fairchild Semiconductor Corporation 5www.fairchildsemi.com
FGH20N60SFDTU_F085 Rev. 1.0
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics
Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.
Gate Resistance
FGH20N60SFDTU_F085 — 600 V, 20 A Field Stop IGBT
©2015 Fairchild Semiconductor Corporation 6www.fairchildsemi.com
FGH20N60SFDTU_F085 Rev. 1.0
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs.
Collector Current Gate Resistance
Figure 17. Switching Loss vs. Figure 18. Turn off Switching
Collector Current SOA Characteristics
FGH20N60SFDTU_F085 — 600 V, 20 A Field Stop IGBT
©2015 Fairchild Semiconductor Corporation 7www.fairchildsemi.com
FGH20N60SFDTU_F085 Rev. 1.0
Typical Performance Characteristics
Figure 19. Forward Characteristics Figure 20. Reverse Current
Figure 21. Stored Charge Figure 22. Reverse Recovery Time
Figure 23.Transient Thermal Impedance of IGBT
t1
PDM
t2
FGH20N60SFDTU_F085 — 600 V, 20 A Field Stop IGBT
©2015 Fairchild Semiconductor Corporation 8www.fairchildsemi.com
FGH20N60SFDTU_F085 Rev. 1.0
Mechanical Dimensions
Figure 24. TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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FGH20N60SFDTU_F085 — 600 V, 20 A Field Stop IGBT
©2015 Fairchild Semiconductor Corporation 9www.fairchildsemi.com
FGH20N60SFDTU_F085 Rev. 1.0
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Rev. I74
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