Berit eee - a MOTOROLA SC {XSTRS/R FT aT = 6367254 MOTOROLA sc CXSTRS/R F) { : MOTOROLA =: SEMICONDUCTOR oa TECHNICAL DATA Tb DE ese7254 o0a0573 3 i Sep 80573 DO! T-33-09 BD233 BD235 BD237 PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR . designed for use in 5 to 10 Watt audio amplifiers and drivers utilizing pl or quasi pl y ciscui @ OC Current Gainh,, = 40 (Min) @ I= 0.18 Ade @ BD 233, 235, 237 are complementary with BD 234, 236, 238 2 AMPERE POWER TRANSISTOR NPN SILICON 45, 60, 80 VOLTS 25 WATTS MAXIMUM RATINGS Rating Symbol Type Value Unie ; 8D 233 45 Collector-Emitter Voltage VoEO 80 236 60 Vide 8D 237 80 BO 733 45 Cotlector-Base Volt V, BO 235 60 Vee eae CBO | BD 237 80 Emitter-Base Voltage Veo 6 Vde Collector Current | lc 2.0 Ade Base Curent 'g 1.0 Adc Total Device Dissipation Tg 25C Po a Watts Operating and Storage Junction Ty Tog 55 to +150 c Temperature Range THERMAL CHARACTERISTICS Characteristic Symbo! Max Unit Thermal Resistance, Junction to Case Or 60 cfw { ELECTRICAL CHARACTERISTICS (1, = 25C uniess athermse noted} Chsracteristic Symbol Type | Min/Max} Unit Collector-Emitter Sustaining Voltage BVeco Vde ig = 0.1 Ade, 1,79) BD 233 | 45) 8D 235 | 60] BO 237 | go} _ Collector Cutoff Current lopo mAdc (Vog 745 Vdc, 1,79 eo 233 | 01 Eg = 60 Vde, te =0) BD 236 j |0.1 Veg =80 Vde, 1, =9) BD 237 | 101 Emitter Cutoff Current leBo mAdc (Wg 75.0 Vdc, 19 =9) j10 DC current Gain (#018 A V..=2V) h 40 | c CE_ FE1 (genta. Vepe2V) FE? 26 | Collector-Emitter Saturation Valtage* Vv Vdc (ig 1 Adc, ty =0.1 Ade) CE (sat) |oe Base-Emitter On Voitage Vee(on) | Vde (igs 1 Ade, Vor =2.0 Vdc) 413 Current-Gain-Bandwidth Product fy MHz (ig = 250 mAde, Veg = 10Vde, f= 1.0 MHz) 3.0 | Pulse Test: Pulse Width = 300 ps, Duty Cycle & 2.0%. 3-307 Se wOTeS LAT =MAn z THE POSITIONED WITHIN Oe LTS CUA TD Oot A AB AT MAO MATERA CORON. P| res eH Pens | aces | ras 5 o [re [sea ose | | 062s | ote rice | ie CASE 77-05 TO-126 | i | i | t | | 8387254 MOTOROLA SC (XSTRS/R F) 88D 80574 _D BD233, BD235,BD237._~~~~CS ee "7233-09 . a x i FIGURE 3 ACTIVE-REGION SAFE OPERATING AREA : : - { 10 ~~ : < : z = ge! 5 The Safe Operating Area Curves indicate |cVceE limits below ' which the device will not enter secondary breakdown. Collector 1 s load lines for specific circuits must fall within the applicable Safe gz Area to avoid causing a catastrophic failure. To insure operation z below the maximum Ty, power-temperature derating must be ob- oa served for both steady state end pulses power conditions, 2s 80 8D of 1 3 6 3 wo Yee. COLLECTOR- EMITTER VOLTAGE (VOLTS) FIGURE 2 COLLECTOR SATURATION REGION 2m) < 2 0.5A 2 os 2 Z 06 & = 5 & 04 8 8 0.2 # % os Os 10 20. 30 200 5.0 10 2 0 50 100 FIGURE 3--CURRENT GAIN Ig. BASE CURRENT (nal FIGURE 4"ON" VOLTAGE a 4 12H T= 25C a2 = ~ c a 2 2 09 = = 3 @lcfhy=10 = a 5S 06 = $ =20 3B g 03 & tut) OIc/ly = Q 2030 50 10 2 30 100 200 1000 2000 Ic. COLLECTOR CURRENT (mA? le. COLLECTOR CURRENT (mA) THERMAL RESPONSE e s z ew Eg w Fr Gictt = bBsc 5 Bac = 4.16C/W Max we ic =3.5C/W Typ < & < CURVES APPLY FOR POWER wz PULSE TRAIN SHOWN su READ TIME At ty 3* a = ty Tatpay ~ Te = Piety Bact z = D=ty/te 001 0.02 06d 02 03 05 Lo 5.0 10 om 3S 10 802 500 1000 t, THME OR PULSE WIDTH (me) 3-308