=4 ai +c SIEMENS AKTIENGESELLSCHAF D-7~.3/-/S eSC D M@ 6235605 0004695 7? MESIEG- NPN Silicon RF Transistor ee BFS 20 BFS 20R BFS 20 is an epitaxial NPN silicon planar RF transistor in TO 236 plastic package (23 A 3 DIN 41 869), intended for use in film circuits. The transistor BFS 20 is marked NA. It is also available upon request with changed terminal sequence (emitter and base terminal interchanged) under the designation BFS 20R (mark NZ). 420,05 12005 Type | Mark | Ordering code bor - 0420015 BFS 20 | NA | 62702-F350 HEY ot ry BFS 20R | NZ 062702-F589 | mA Maximum ratings Coilector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Junction temperature Storage temperature range Total power dissipation (Tsg < 65 C) Thermal resistance Junction to ambient air Junction to substrate back!) 2 1.) Ceramic substrate 0.7 mm; 2.6 cm* area 2072 A-09 ior Qo rt 3.915 0,420.03 10,25 12-935 Approx. weight 0.02 g Dimensions in mm VcEo Veso Veso Tstg P, tot Rina Rihuss 20 30 4 25 125 -65 to +125 150 520 410 mA C mW K/W K/W 741 ee A Veli Eaanhbienselt ikke Mit wremayhila sinew et ree -- ne pO ee 25 D WH A235605 OOOLSL 9 MSIEG | _25C 04696. O-7=,3/-18 | BFS 20 BFS 20R ~ SIEMENS AKTIENGESELLSCHAF Static characteristics (Tamp = 25C) Collector-emitter breakdown voltage , (Iceo = 2 mA) Viariceo 220 Vv Collector cutoff current lego <100 nA (Vepo = 20V; Tj = 100C) leso <10 pA Base-emitter voltage (Veg = 10 V; Ig = 7 mA) Vee 740 (900) | mV DC current gain (Voce = 10 V; Ig = 7 mA) hee 85 (> 40) - Dynamic characteristics (Tamb = 25C) Transition frequency (Vee = 10 V; Ig = 5 mA; f = 100 MHz) fr 450 (> 275) | MHz Reverse transfer capacitance (Vee = 10 V; Ic = 1 mA; f = 1 MHz) Ci2e 0.35 pF Collector-base capacitance . (Veg = 10 V; f = 1 MHz) Ccso 0.8 pF Total perm. power dissipation versus temperature mW Prot = f(T) 200 so 0 50 100) 6 (tid50 Tare. TSB 742 a 2073 A-10 . Wee atepe t tee te