DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D187 2PB1219A PNP general purpose transistor Product specification Supersedes data of 1997 Mar 25 1999 Apr 12 Philips Semiconductors Product specification PNP general purpose transistor 2PB1219A FEATURES PINNING * High current (max. 500 mA) PIN DESCRIPTION * Low voltage (max. 50 V) 1 base * Low collector-emitter saturation voltage (max. 600 mV). 2 emitter 3 collector APPLICATIONS * General purpose switching and amplification. DESCRIPTION 3 handbook, halfpage PNP transistor in a SOT323; SC70 plastic package. NPN complement: 2PD1820A. 3 1 MARKING 2 MARKING CODE(1) TYPE NUMBER 2PB1219AQ 1 DQ 2PB1219AR DR 2PB1219AS DS 2 Top view Note Fig.1 1. = - : Made in Hong Kong. = t : Made in Malaysia. MAM048 Simplified outline (SOT323; SC70) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - -60 VCEO collector-emitter voltage open base - -50 V VEBO emitter-base voltage open collector - -5 V IC collector current (DC) - -500 mA ICM peak collector current - -1 A IBM peak base current Ptot total power dissipation Tstg V - -200 mA - 200 mW storage temperature -65 +150 C Tj junction temperature - 150 C Tamb operating ambient temperature -65 +150 C Tamb 25 C; note 1 Note 1. Refer to SOT323; SC70 standard mounting conditions. 1999 Apr 12 2 Philips Semiconductors Product specification PNP general purpose transistor 2PB1219A THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 625 K/W note 1 Note 1. Refer to SOT323; SC70 standard mounting conditions. CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS IE = 0; VCB = -20 V MIN. - MAX. -100 UNIT ICBO collector cut-off current IE = 0; VCB = -20 V; Tj = 150 C - -5 A IEBO emitter cut-off current IC = 0; VEB = -4 V - -100 nA hFE DC current gain IC = -150 mA; VCE = -10 V; note 1 2PB1219AQ 85 170 2PB1219AR 120 240 2PB1219AS 170 340 hFE DC current gain IC = -500 mA; VCE = -10 V; note 1 40 - nA VCEsat collector-emitter saturation voltage IC = -300 mA; IB = -30 mA; note 1 - -600 mV VBEsat base-emitter saturation voltage IC = -300 mA; IB = -30 mA; note 1 - -1.5 V Cc collector capacitance IE = ie = 0; VCB = -10 V; f = 1 MHz - 15 pF fT transition frequency IC = 50 mA; VCE = -10 V; f = 100 MHz; note 1 100 - MHz 2PB1219AR 120 - MHz 2PB1219AS 140 - MHz 2PB1219AQ Note 1. Pulse test: tp 300 s; 0.02. 1999 Apr 12 3 Philips Semiconductors Product specification PNP general purpose transistor 2PB1219A PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 1999 Apr 12 REFERENCES IEC JEDEC EIAJ SC-70 4 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification PNP general purpose transistor 2PB1219A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 12 5 Philips Semiconductors Product specification PNP general purpose transistor 2PB1219A NOTES 1999 Apr 12 6 Philips Semiconductors Product specification PNP general purpose transistor 2PB1219A NOTES 1999 Apr 12 7 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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