Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Switching Diode
1SS400G
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
High speed switching
Features
1)Ultra small mold type.（VMD2）
2)High reliability
Construction
Silicon epitaxial planer Structure
Absolute maximum ratings (Ta=25C)
Symbol Unit
VRM V
VRV
IFM mA
Io mA
Isurge mA
Tj C
Tstg C
Electrical characteristics (Ta=25C)
Symbol Min. Typ. Max. Unit Conditions
Forward voltage VF- - 1.2 V IF=100mA
IR- - 100 nA VR=80V
Ct- - 3.0 pF VR=0.5V f=1.0MHz
Trr - - 4.0 ns VR=6V IF=10mA RL＝100Ω
Capacitance between terminal
Reverse recovery time
Storage temperature 55 to 150
Parameter
Reverse current
Surge current (1S) 500
Junction temperature 150
Forward current (repetitive peak) 225
Average rectified forward current 100
Reverse voltage (repetitive peak) 90
Reverse voltage (DC) 80
Taping dimensions (Unit : mm)
Parameter Limits
VMD2
ROHM : VMD2
dot (year week factory)
0.5
1.2
0.5
0.13±0.03
0.5±0.05
0.27±0.03
0.6±0.05
1.0±0.05
1.4±0.05
0.76±0.1 4±0.1
4±0.1 2±0.05 φ1.5+0.1
0
3.5±0.05 1.75±0.1
8.0±0.3
0.1
0.18±0.05
0.65±0.05
φ0.5
0.4
2±0.05
0.3
1.11±0.05
2.1±0.1
1/4 2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
1SS400G
0.1
1
10
100
1000
0500 1000 1500
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
Tj=125°C
Tj=25°C
Tj=150°C
Tj=75°C
1
10
100
1000
10000
100000
020 40 60 80
Tj=125°C
Tj=25°C
Tj=150°C
Tj=75°C
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
0.1
1
10
0 5 10 15 20 25 30
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
f=1MHz
Tj=25
°
C
850
860
870
880
890
900
910
920
930
940
950
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
AVE:891.2mV
Tj=25°C
IF=0.1A
n=30pcs
1
10
100
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
Tj=25°C
VR=80V
n=30pcs
AVE:22.17nA
0
0.2
0.4
0.6
0.8
1
AVE:0.595pF
Ta=25°C
f=1MHz
VR=0.5V
n=10pcs
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
2/4 2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
1SS400G
0
2
4
6
8
10
12
14
16
18
20
AVE:3.9A
8.3ms
IFSM
1cyc
IFSM DISPERSION MAP
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
0
0.5
1
1.5
2
AVE:1.49ns
Ta=25
°C
VR=6V
IF=10mA
R
L=100
Ω
n=10pcs
trr DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
1
10
100
110 100
8.3ms
IFSM
1cyc.
8.3ms
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1
10
100
110 100
time
IFSM
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
0
5
10
15
20
25
30
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
AVE：1.60kV
AVE：6.48kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THERMAL IMPEDANCE:Rth (
°
C/W)
3/4 2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
1SS400G
0
0.05
0.1
0.15
0.2
025 50 75 100 125 150
D.C.
D=1/2
Sin(θ＝180)
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0 0.05 0.1 0.15 0.2
D.C.
D=1/2
Sin(θ＝180)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
0
0.002
0.004
0.006
010 20 30 40 50 60 70 80
D.C.
D=1/2
Sin(θ＝180)
REVERSE POWER
DISSIPATION:P
R
(W)
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
T
Tj=150°C
D=t/T
t
VR
Io
VR=40V
0A
0V
4/4 2011.10 - Rev.A
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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