MOC8021M, MOC8050M 6-Pin DIP Photodarlington Optocoupler (No Base Connection) The MOC8021M and MOC8050M are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor. www.onsemi.com Features * High BVCEO: Minimum 50 V (MOC8021M) Minimum 80 V (MOC8050M) High Current Transfer Ratio: Minimum 1000% (MOC8021M) Minimum 500% (MOC8050M) No Base Connection for Improved Noise Immunity Safety and Regulatory Approvals: UL1577, 4,170 VACRMS for 1 Minute DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage * * * PDIP6 CASE 646BY Applications * * * * * * Appliances, Measuring Instruments I/O Interface for Computers Programmable Controllers Portable Electronics Interfacing and Coupling Systems of Different Potentials and Impedance Solid State Relays PDIP6 CASE 646BZ PDIP6 CASE 646BX MARKING DIAGRAM MOC8021 V X YY Q SCHEMATIC 1 N/C ANODE CATHODE COLLECTOR EMITTER N/C (Top View) MOC8021 = Device Code V = DIN EN/IEC60747-5-5 Option = (only appears on component = ordered with this option) X = One-Digit Year Code, e.g., "5" YY = Digit Work Week, = Ranging from "01" to "53" Q = Assembly Package Code ORDERING INFORMATION See detailed ordering, marking and shipping information on page 7 of this data sheet. (c) Semiconductor Components Industries, LLC, 2000 November, 2018 - Rev. 4 1 Publication Order Number: MOC8021M/D MOC8021M, MOC8050M Table 1. SAFETY AND INSULATION RATINGS As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for "safe electrical insulation" only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage < 150 VRMS I-IV < 300 VRMS I-IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over-Voltage VPR Parameter 6,000 Vpeak External Creepage 7 mm External Clearance 7 mm External Clearance (for Option TV, 0.4 Lead Spacing) 10 mm DTI Distance Through Insulation (Insulation Thickness) 0.5 mm TS Case Temperature (Note 1) 175 C IS,INPUT Input Current (Note 1) 350 mA PS,OUTPUT Output Power (Note 1) 800 mW RIO Insulation Resistance at TS, VIO = 500 V (Note 1) > 109 W 1. Safety limit values - maximum values allowed in the event of a failure. Table 2. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Units TOTAL DEVICE TSTG Storage Temperature -40 to +125 C TOPR Operating Temperature -40 to +100 C TJ TSOL PD Junction Temperature -40 to +125 C 260 for 10 seconds C Total Device Power Dissipation @ TA = 25C 270 mW Derate above 25C 2.94 mW/C Lead Solder Temperature EMITTER IF DC/Average Forward Input Current 60 mA VR Reverse Input Voltage 3 V PD LED Power Dissipation @ TA = 25C 120 mW Derate Above 25C 1.41 mW/C Continuous Collector Current 150 mA Collector-Emitter Voltage - MOC8021M 50 V Collector-Emitter Voltage - MOC8050M 80 V DETECTOR IC VCEO PD Detector Power Dissipation @ TA = 25C 150 mW Derate Above 25C 1.76 mW/C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 2 MOC8021M, MOC8050M Table 3. ELECTRICAL CHARACTERISTICS TA = 25C unless otherwise specified Parameter Symbol Test Conditions Min Typ Max Units EMITTER VF Input Forward Voltage IF = 10 mA 1.18 2.00 V IR Reverse Leakage Current VR = 3.0 V 0.001 10 mA DETECTOR BVCEO IC = 1.0 mA, IF = 0 50 100 V (MOC8050M) 80 100 V Emitter-Collector Breakdown Voltage IE = 100 mA, IF = 0 5 10 V ICEO Collector-Emitter Dark Current VCE = 60 V, IF = 0 CCE Capacitance BVECO Collector-Emitter Breakdown Voltage (MOC8021M) 1 VCE = 0 V, f = 1 MHz 8 mA pF Table 4. TRANSFER CHARACTERISTICS TA = 25C unless otherwise specified Parameter Symbol Test Conditions Min Typ Max Units IF = 10 mA, VCE = 5 V 1,000 % IF = 10 mA, VCE = 1.5 V 500 % DC CHARACTERISTICS CTR Current Transfer Ratio, Collector-to-Emitter (MOC8021M) (MOC8050M) AC CHARACTERISTICS ton Turn-on Time IF = 5 mA, VCC = 10 V, RL = 100 W 8.5 ms toff Turn-off Time IF = 5 mA, VCC = 10 V, RL = 100 W 95 ms Table 5. ISOLATION CHARACTERISTICS Symbol Parameter VISO Input-Output Isolation Voltage CISO Isolation Capacitance RISO Isolation Resistance Test Conditions Min t = 1 Minute 4170 VI-O = 0 V, f = 1 MHz VI-O = 500 VDC, TA = 25C Typ Units VACRMS 0.2 1011 Max pF W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 MOC8021M, MOC8050M TYPICAL CHARACTERISTICS NORMALIZED CTR - CURRENT TRANSFER RATIO VF - FORWARD VOLTAGE (V) 1.8 1.6 1.4 T A =-40 o C 1.2 T A =25 o C 1.0 T A =110 o C 0.8 0.6 0.1 1 10 100 V CE =10 V Normalized to I F =10mA T A =25 oC o 1 o TA =7 0 C TA =110 o C 0.1 0.1 1 IF - LED FORWARD CURRENT (mA) VCC =10 V RL =1k o Normalized to TA =25 C CE TON - TURN-ON TIME ( ms) NORMALIZED CTR - CURRENT TRANSFER RATIO 1000 1.2 1.0 0.8 TA =25 o C 100 RL =100 RL =10 10 1 0.6 0.4 -40 -20 0 20 40 60 80 100 0.1 0.1 120 1 TA - AMBIENT TEMPERATURE (_C) NORMALIZED I CE - COLLECOTR-EMITTER CURRENT VCC =10V 1000 R L =1K 100 RL =100 R L =10 10 0 1 100 Figure 4. Turn-on Time vs. Forward Current TA =25 oC 1 10 IF - FORWARD CURRENT (mA) Figure 3. Normalized CTR vs. Ambient Temperature TOFF - TURN-ON TIME (ms) 100 Figure 2. Normalized CTR vs. Forward Current 1.6 1.4 10 IF - FORWARD CURRENT (mA) Figure 1. LED Forward Voltage vs. Forward Current IF =10 mA V =10 V T A =-40 o C o TA =0 C,25 C 10 100 16 Normalizedto: IF =1mA,VCE =5V o TA =25 C 14 IF =10mA 12 10 IF =5mA 8 6 4 IF =2mA 2 0 IF =1mA 0 IF - FORWARD CURRENT (mA) 1 2 3 4 5 6 7 8 9 10 VCE - COLLECTOR-EMITTER VOLTAGE (V) Figure 5. Turn-off Time vs. Forward Current Figure 6. Normalized Collector-Emitter Current vs. Collector-Emitter Voltage www.onsemi.com 4 MOC8021M, MOC8050M Typical Performance Curves (Continued) ICEO - COLLECTOR -EMITTER DARK CURRENT (nA) 100,000 V 10,000 CE =10 V 1.000 100 10 1 0.1 0.01 -40 -20 0 20 40 60 80 100 120 TA - AMBIENT TEMPERATURE (_C) Figure 7. Dark Current vs. Ambient Temperature Switching Time Test Circuit and Waveform TEST CIRCUIT WAVE FORMS VCC = 10 V INPUT PULSE IC IF INPUT RL 10% OUTPUT OUTPUT PULSE 90% RBE tr ton Adjust IF to produce IC = 2 mA Figure 8. Switching Time Test Circuit and Waveform www.onsemi.com 5 tf toff MOC8021M, MOC8050M REFLOW PROFILE Figure 9. Reflow Profile Profile Freature Pb*Free Assembly Profile Temperature Min. (Tsmin) 150_C Temperature Max. (Tsmax) 200_C Time (t S) from (Tsmin to Tsmax) 60-120 seconds Ramp*up Rate (tL to tP) 3_C/second max. Liquidous Temperature (TL) 217_C Time (tL) Maintained Above (T L) 60-150 seconds Peak Body Package Temperature 260_C +0_C / -5_C Time (t P) within 5_C of 260_C 30 seconds Ramp*down Rate (TP to TL) 6_C / second max. Time 25_C to Peak Temperature 8 minutes max. www.onsemi.com 6 MOC8021M, MOC8050M ORDERING INFORMATION Part Number MOC8021M Package Packing Method DIP 6-Pin Tube (50 Units) MOC8021SM SMT 6-Pin (Lead Bend) Tube (50 Units) MOC8021SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units) DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units) MOC8021SVM MOC8021VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units) MOC8021SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units) MOC8021TVM DIP 6-Pin, 0.4 Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units) DIP 6-Pin Tube (50 Units) MOC8050SM SMT 6-Pin (Lead Bend) Tube (50 Units) MOC8050SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units) MOC8050M MOC8050VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units) MOC8050SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units) MOC8050SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units) MOC8050TVM DIP 6-Pin, 0.4 Lead Spacing, DIN EN/IEC60747-5-5 Option www.onsemi.com 7 Tube (50 Units) MOC8021M, MOC8050M PACKAGE DIMENSIONS PDIP6 8.51x6.35, 2.54P CASE 646BX ISSUE O www.onsemi.com 8 MOC8021M, MOC8050M PACKAGE DIMENSIONS PDIP6 8.51x6.35, 2.54P CASE 646BY ISSUE O www.onsemi.com 9 MOC8021M, MOC8050M PACKAGE DIMENSIONS PDIP6 8.51x6.35, 2.54P CASE 646BZ ISSUE O ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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