© Semiconductor Components Industries, LLC, 2000
November, 2018 Rev. 4
1Publication Order Number:
MOC8021M/D
MOC8021M, MOC8050M
6-Pin DIP Photodarlington
Optocoupler (No Base
Connection)
The MOC8021M and MOC8050M are photodarlingtontype
optically coupled optocouplers. The devices have a gallium arsenide
infrared emitting diode coupled with a silicon darlington
phototransistor.
Features
High BVCEO:
Minimum 50 V (MOC8021M)
Minimum 80 V (MOC8050M)
High Current Transfer Ratio:
Minimum 1000% (MOC8021M)
Minimum 500% (MOC8050M)
No Base Connection for Improved Noise Immunity
Safety and Regulatory Approvals:
UL1577, 4,170 VACRMS for 1 Minute
DINEN/IEC6074755, 850 V Peak Working Insulation Voltage
Applications
Appliances, Measuring Instruments
I/O Interface for Computers
Programmable Controllers
Portable Electronics
Interfacing and Coupling Systems of Different Potentials and
Impedance
Solid State Relays
SCHEMATIC
(Top View)
ANODE
CATHODE
N/C
COLLECTOR
1
EMITTER
N/C
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PDIP6
CASE 646BY
MARKING DIAGRAM
See detailed ordering, marking and shipping information on
page 7 of this data sheet.
ORDERING INFORMATION
PDIP6
CASE 646BZ
PDIP6
CASE 646BX
MOC8021 = Device Code
V = DIN EN/IEC6074755 Option
= (only appears on component
= ordered with this option)
X = OneDigit Year Code, e.g., “5”
YY = Digit Work Week,
= Ranging from “01” to “53”
Q = Assembly Package Code
MOC8021
V X YY Q
MOC8021M, MOC8050M
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2
Table 1. SAFETY AND INSULATION RATINGS
As per DIN EN/IEC 6074755, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance
with the safety ratings shall be ensured by means of protective circuits.
Parameter Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1,
For Rated Mains Voltage
< 150 VRMS I–IV
< 300 VRMS I–IV
Climatic Classification 55/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
Comparative Tracking Index 175
Symbol Parameter Value Unit
VPR InputtoOutput Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
1360 Vpeak
InputtoOutput Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
1594 Vpeak
VIORM Maximum Working Insulation Voltage 850 Vpeak
VIOTM Highest Allowable OverVoltage 6,000 Vpeak
External Creepage 7 mm
External Clearance 7 mm
External Clearance (for Option TV, 0.4 Lead Spacing) 10 mm
DTI Distance Through Insulation (Insulation Thickness) 0.5 mm
TSCase Temperature (Note 1) 175 °C
IS,INPUT Input Current (Note 1) 350 mA
PS,OUTPUT Output Power (Note 1) 800 mW
RIO Insulation Resistance at TS, VIO = 500 V (Note 1) > 109W
1. Safety limit values – maximum values allowed in the event of a failure.
Table 2. ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Units
TOTAL DEVICE
TSTG Storage Temperature 40 to +125 °C
TOPR Operating Temperature 40 to +100 °C
TJJunction Temperature 40 to +125 °C
TSOL Lead Solder Temperature 260 for 10 seconds °C
PDTotal Device Power Dissipation @ TA = 25°C 270 mW
Derate above 25°C 2.94 mW/°C
EMITTER
IFDC/Average Forward Input Current 60 mA
VRReverse Input Voltage 3 V
PDLED Power Dissipation @ TA = 25°C 120 mW
Derate Above 25°C 1.41 mW/°C
DETECTOR
ICContinuous Collector Current 150 mA
VCEO CollectorEmitter Voltage MOC8021M 50 V
CollectorEmitter Voltage MOC8050M 80 V
PDDetector Power Dissipation @ TA = 25°C 150 mW
Derate Above 25°C 1.76 mW/°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
MOC8021M, MOC8050M
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3
Table 3. ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified
Symbol Parameter Test Conditions Min Typ Max Units
EMITTER
VFInput Forward Voltage IF = 10 mA 1.18 2.00 V
IRReverse Leakage Current VR = 3.0 V 0.001 10 mA
DETECTOR
BVCEO CollectorEmitter Breakdown
Voltage (MOC8021M)
IC = 1.0 mA, IF = 0 50 100 V
(MOC8050M) 80 100 V
BVECO EmitterCollector Breakdown
Voltage
IE = 100 mA, IF = 0 5 10 V
ICEO CollectorEmitter Dark Current VCE = 60 V, IF = 0 1mA
CCE Capacitance VCE = 0 V, f = 1 MHz 8 pF
Table 4. TRANSFER CHARACTERISTICS TA = 25°C unless otherwise specified
Symbol Parameter Test Conditions Min Typ Max Units
DC CHARACTERISTICS
CTR Current Transfer Ratio,
CollectortoEmitter (MOC8021M)
IF = 10 mA, VCE = 5 V 1,000 %
(MOC8050M) IF = 10 mA, VCE = 1.5 V 500 %
AC CHARACTERISTICS
ton Turnon Time IF = 5 mA, VCC = 10 V,
RL = 100 W
8.5 ms
toff Turnoff Time IF = 5 mA, VCC = 10 V,
RL = 100 W
95 ms
Table 5. ISOLATION CHARACTERISTICS
Symbol Parameter Test Conditions Min Typ Max Units
VISO InputOutput Isolation Voltage t = 1 Minute 4170 VACRMS
CISO Isolation Capacitance VIO = 0 V, f = 1 MHz 0.2 pF
RISO Isolation Resistance VIO = ±500 VDC, TA = 25°C 1011 W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
MOC8021M, MOC8050M
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4
TYPICAL CHARACTERISTICS
Figure 1. LED Forward Voltage vs. Forward
Current
Figure 2. Normalized CTR vs. Forward Current
Figure 3. Normalized CTR vs. Ambient
Temperature
Figure 4. Turnon Time vs. Forward Current
Figure 5. Turnoff Time vs. Forward Current Figure 6. Normalized CollectorEmitter Current
vs. CollectorEmitter Voltage
IF FORWARD CURRENT (mA)
NORMALIZED CTR – CURRENT TRANSFER RATIO
NORMALIZED CTR – CURRENT TRANSFER RATIO
TA AMBIENT TEMPERATURE (_C)
IF LED FORWARD CURRENT (mA)
VF FORWARD VOLTAGE (V)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1
0.1
0.1 1 10 100
40 200 20406080100120
0.1 1 10 100
TA=25 oC
TA=40 oC
TA=110 oC
VCE =10 V
TA=25 oC
Normalized to IF=10mA
TA=40 oC
T
A=0oC,25oC
T
A=7 0oC
TA=110oC
IF=10 mA
VCE =10 V
Normalized to T
A=25oC
1000
100
10
1
VCC =10V
TA=25oC
RL=1K Ω
RL=100 Ω
RL=10 Ω
0910
0
2
4
6
8
10
12
14
16
TA=25 oC
IF=1mA
IF=2mA
IF=5mA
IF=10mA
Normalizedto:
IF=1mA,VCE =5V
VCE COLLECTOREMITTER VOLTAGE (V)
IF FORWARD CURRENT (mA)
0110100
NORMALIZED I CE COLLECOTREMITTER CURRENT
TOFF TURNON TIME (ms)
VCC =10 V
TA=25oC
RL=1k Ω
RL=100 Ω
RL=10 Ω
IF FORWARD CURRENT (mA)
TON TURNON TIME ( ms)
0.1 1 10 100
0.1
1
10
100
1000
1 234 5 678
MOC8021M, MOC8050M
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5
Figure 7. Dark Current vs. Ambient Temperature
Figure 8. Switching Time Test Circuit and Waveform
Typical Performance Curves (Continued)
Switching Time Test Circuit and Waveform
40 20 0 20 40 60 80 100 120
100,000
10,000
1.000
100
10
1
0.1
0.01
TA AMBIENT TEMPERATURE (_C)
ICEO COLLECTOR EMITTER DARK CURRENT (nA)
VCE=10 V
OUTPUT PULSE
INPUT PULSE
TEST CIRCUIT WAVE FORMS
trtf
INPUT
IFRL
RBE
VCC = 10 V
OUTPUT
ton
10%
90%
toff
IC
Adjust IF to produce I
C = 2 mA
MOC8021M, MOC8050M
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6
REFLOW PROFILE
Figure 9. Reflow Profile
Prole Freature Pb*Free Assembly Prole
Temperature Min. (Tsmin) 150_C
Temperature Max. (Tsmax) 200_C
Time (t S) from (Tsmin to Tsmax) 60–120 seconds
Ramp*up Rate (t
L to tP) 3_C/second max.
Liquidous Temperature (TL)217_C
Time (tL) Maintained Above (TL)60–150 seconds
Peak Body Package Temperature 260_C +0_C / –5_C
Time (t P) within 5_C of 260_C30 seconds
Ramp*down Rate (TP to TL) 6_C / second max.
Time 25_C to Peak Temperature 8 minutes max.
MOC8021M, MOC8050M
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7
ORDERING INFORMATION
Part Number Package Packing Method
MOC8021M DIP 6Pin Tube (50 Units)
MOC8021SM SMT 6Pin (Lead Bend) Tube (50 Units)
MOC8021SR2M SMT 6Pin (Lead Bend) Tape and Reel (1000 Units)
MOC8021VM DIP 6Pin, DIN EN/IEC6074755 Option Tube (50 Units)
MOC8021SVM SMT 6Pin (Lead Bend), DIN EN/IEC6074755 Option Tube (50 Units)
MOC8021SR2VM SMT 6Pin (Lead Bend), DIN EN/IEC6074755 Option Tape and Reel (1000 Units)
MOC8021TVM DIP 6Pin, 0.4 Lead Spacing, DIN EN/IEC6074755 Option Tube (50 Units)
MOC8050M DIP 6Pin Tube (50 Units)
MOC8050SM SMT 6Pin (Lead Bend) Tube (50 Units)
MOC8050SR2M SMT 6Pin (Lead Bend) Tape and Reel (1000 Units)
MOC8050VM DIP 6Pin, DIN EN/IEC6074755 Option Tube (50 Units)
MOC8050SVM SMT 6Pin (Lead Bend), DIN EN/IEC6074755 Option Tube (50 Units)
MOC8050SR2VM SMT 6Pin (Lead Bend), DIN EN/IEC6074755 Option Tape and Reel (1000 Units)
MOC8050TVM DIP 6Pin, 0.4 Lead Spacing, DIN EN/IEC6074755 Option Tube (50 Units)
MOC8021M, MOC8050M
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8
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BX
ISSUE O
MOC8021M, MOC8050M
www.onsemi.com
9
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BY
ISSUE O
MOC8021M, MOC8050M
www.onsemi.com
10
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BZ
ISSUE O
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MOC8021M/D
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