LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
FEATURES
* Current transfer ratio
June 2010
( CTR : MIN. 50% at I
F
=
5mA, V
CE
=
5V )
* High input-output isolation voltage
( V
iso
=
5,000Vrms )
* Response time
( t
r
: TYP. 4µs at V
CE
=
2V, I
C
=
2mA, R
L
=
100 )
* Dual-in-line package :
LTV816-V : 1-channel type
LTV826-V : 2-channel type
LTV846-V : 4-channel type
* Wide lead spacing package :
LTV816M-V : 1-channel type
LTV826M-V : 2-channel type
LTV846M-V : 4-channel type
* Surface mounting package :
LTV816S-V : 1-channel type
LTV826S-V : 2-channel type
LTV846S-V : 4-channel type
* Tape and reel packaging :
LTV816STA1-V, LTV826STA1-V
* Safety approval
UL , CSA, FIMKO, NEMKO, DEMKO, SEMKO, VDE* approved
(*Requires “V” ordering option)
* RoHS compliance
Part No. :
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LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV816-V :
LTV826-V :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked
(W: China-CZ, X : China-TJ, Y : Thailand, Z : Taiwan)
*4. Rank shall be or shall not be marked.
*5. “4” or “V” for 4 pin VDE option; for 8 & 16 pin devices.
Part No. :
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LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV846-V :
LTV816M-V :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked
(W: China-CZ, X : China-TJ, Y : Thailand, Z : Taiwan)
*4. Rank shall be or shall not be marked.
*5. “4” or “V” for 4 pin VDE option; for 8 & 16 pin devices.
Part No. :
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LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV826M-V :
LTV846M-V :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked
(Z : Taiwan, Y : Thailand, X : China-TJ, W: China-CZ)
*4. Rank shall be or shall not be marked.
*5. “4” or “V” for 4 pin VDE option; for 8 & 16 pin devices.
Part No. :
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BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV816S-V :
LTV826S-V :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked
(Z : Taiwan, Y : Thailand, X : China-TJ, W: China-CZ)
*4. Rank shall be or shall not be marked.
*5. “4” or “V” for 4 pin VDE option; for 8 & 16 pin devices.
Part No. :
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15
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV846S-V :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked
(W: China-CZ, X : China-TJ, Y : Thailand, Z : Taiwan)
*4. Rank shall be or shall not be marked.
*5. “4” or “V” for 4 pin VDE option; for 8 & 16 pin devices.
Part No. :
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BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
TAPING DIMENSIONS
LTV816STA1-V :
LTV826STA1-V :
Description Symbol Dimensions in mm ( inches )
Tape wide W 16 ± 0.3 ( .63 )
Pitch of sprocket holes P
0
4 ± 0.1 ( .15 )
Distance of compartment F
P
2
7.5 ± 0.1 ( .295 )
2 ± 0.1 ( .079 )
Distance of compartment to compartment P
1
12 ± 0.1 ( .472 )
Part No. :
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BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
ABSOLUTE MAXIMUM RATING
( Ta = 25°C )
PARAMETER SYMBOL
RATING UNIT
Forward Current I
F
50 mA
Reverse Voltage V
R
6 V
INPUT
Power Dissipation P 70 mW
Collector - Emitter Voltage V
CEO
80 V
Emitter - Collector Voltage V
ECO
6 V
Collector Current I
C
50 mA
OUTPUT
Collector Power Dissipation P
C
150 mW
Total Power Dissipation P
tot
200 mW
*1 Isolation Voltage V
iso
5,000 Vrms
Operating TemperatureLTV- 826 / 846 T
opr
-30 ~ +100 °C
Operating Temperature LTV-816 T
opr
-30 ~ +110 °C
Storage Temperature T
stg
-55 ~ +125 °C
*2 Soldering Temperature T
sol
260 °C
*1. AC For 1 Minute, R.H. = 40 ~ 60%
Isolation voltage shall be measured using the following method.
(1) Short between anode and cathode on the primary side and between collector and
emitter on the secondary side.
(2) The isolation voltage tester with zero-cross circuit shall be used.
(3) The waveform of applied voltage shall be a sine wave.
*2. For 10 Seconds
Part No. :
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LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
ELECTRICAL - OPTICAL CHARACTERISTICS
( Ta = 25°C )
PARAMETER SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
Forward Voltage V
F
1.2 1.4 V I
F
=20mA
Reverse Current I
R
10 µA
V
R
=4V
INPUT
Terminal Capacitance C
t
30 250
pF
V=0, f=1KHz
Collector Dark Current I
CEO
100
nA
V
CE
=20V, I
F
=0
Collector-
Emitter
Breakdown Voltage BV
CEO
80 V I
C
=0.1mA
I
F
=0
OUTPUT
Emitter-Collector
Breakdown Voltage BV
ECO
6 V I
E
=10µA
I
F
=0
Collector Current I
C
2.5 30 mA
*1
Current Transfer Ratio CTR
50 600
%
I
F
=5mA
V
CE
=5V
Collector-
Emitter
Saturation Voltage V
CE(sat)
0.1 0.2 V I
F
=20mA
I
C
=1mA
Isolation Resistance R
iso
5×10
10
1×10
11
DC500V
40 ~ 60% R.H.
Floating Capacitance C
f
0.6 1 pF
V=0, f=1MHz
Response Time (Rise) t
r
4 18 µs
TRANSFER
CHARACTERISTICS
Response Time (Fall) t
f
3 18 µs
V
CE
=2V, I
C
=2mA
R
L
=100
*1 CTR
I
I100%
C
F
= ×
Part No. :
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LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
RANK TABLE OF CURRENT TRANSFER RATIO CTR
MODEL NO. RANK MARK CTR ( % )
LTV816-V L 50 ~ 100
LTV816-V A 80 ~ 160
LTV816-V B 130 ~ 260
LTV816-V C 200 ~ 400
LTV816-V D 300 ~ 600
LTV816-V L or A or B or C or D 50 ~ 600
LTV86-V B 130 ~ 260
LTV86-V B or C or BC 130 ~ 400
LTV86-V C 200 ~ 400
LTV86-V C or D or CD 200 ~ 600
LTV86-V BBCCCD or No mark
50 ~ 600
= 2 or 4
CONDITIONS
I
F
= 5 mA
V
CE
= 5 V
Ta = 25 °C
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LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
CHARACTERISTICS CURVES
Fig.1 Forword Current Fig.2 Collector Power Dissiption
vs. Ambient Temperature
Fig.4 Forward Current vs. Forward
Fig.5 Current Transfer Ratio vs.
Forward Current Fig.6 Collector Current vs.
Collector-emitter Voltage
F
FCE
F
F
0-30
Ta= 75 C
50 C 25 C
0 C
-25 C
V = 5V
Ta= 25 C
CE
Ta= 25 C
I = 30mA
Pc(MAX.)
5mA
F
10mA
20mA
vs. Ambient Temperatute
Collector-emitter voltage V (V)
Forward voltage V (V)
Ambient temperature Ta ( C)Ambient temperature Ta ( C)
Forward current I (mA)
Forward current I (mA)
Collector Power dissipation Pc (mW)
Forward current I (mA)
Current transfer ratio CTR (%)
Collector current Ic (mA)
Fig.3 Collector-emitter Saturation
Voltage vs. Forward Current
F
CE
Ic=0.5mA
1mA
3mA
7mA
5mA
Ta= 25 C
Collecotr-emitter saturation voltage
V (sat) (V)
Forward current I (mA)
Voltage
o
o
o
O
o
o
oo
o
o
0 25 50 75 100 125 0-30 12525 50 75 100
10
20
30
40
50
60
0
50
100
150
200
0
1
0
015
1
2
3
4
5
6
0.5 1.0 1.5 2.0 2.5 3.0
2
5
10
20
50
100
200
500
01002 5 10 20 50
20
40
60
80
100
120
140
160
180
200
123456789
10
20
30
105
5
15
25
Part No. : LTV816 / 826 / 846 (M, S, STA1)-V Page :
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LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
CHARACTERISTICS CURVES
R = 10k
L
1k 100
tr
tf
td
ts
Fig.8 Collector-emitter Saturation Voltage
Fig.9 Collector Dark Current vs.
Ambient Temperature Fig.10 Response Time vs. Load
Fig.11 Frequency Response
L
CEO
0-30
CE
V = 2V
Ic= 2mA
Ta= 25 C
CE
I = 5mA
V = 5V
CE
FF
Ic= 1mA
I = 20mA
CE
V = 2V
Ic= 2mA
Ta= 25 C
vs. Ambient Temperature
Ambient temperature Ta ( C)
Load resistance R (k )
Ambient temperature Ta ( C)
Ambient temperature Ta ( C)
Frequency f (kHz)
Response time ( s)
Relative current transfer ratio (%)
Collector dark current I (A)
Voltage gain Av (dB)
Collector-emitter saturation voltage
V (sat) (V)
-10
o
o
oo
o
0 25 50 75 100
50
100
150
-25
0 0 25 50 75 100
10 -25 0.2
0.050 25 50 75 100
10
10
10
10
10
10
-9
-8
-7
-6
-5
-11
0.1 0.2 0.5 1 2 5 10
0.5
1
2
5
10
20
50
100
200
500
0.5
20
10
0
2 10 100 500
Resistance
Fig.7 Relative Current Transfer Ratio
vs. Ambient Temperature
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
1 5 20 50
CE
V =20V
125 125
125
Test Circuit for Frequency Response
Test Circuit for Response Time
Part No. :
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LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD)
Unit : mm
4 PIN 8 PIN
16 PIN
Part No. :
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BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
TEMPERATURE PROFILE OF SOLDERING REFLOW
(1) One time soldering reflow is recommended within the condition of temperature and time
profile shown below.
1. Wave solder
- 260˚C / 10 sec.
2. IR Reflow
Profile item Conditions
Preheat
- Temperature Min (T
Smin
)
- Temperature Max (T
Smax
)
- Time (min to max) (ts)
150˚C
180˚C
90±30˚C
Soldering zone
- Temperature (T
L
)
- Time (t
L
)
250˚C
10~15 sec
Peak Temperature (T
P
) 260˚C
Ramp-down rate 3~6˚C / sec
Time (sec)
ts (Preheat)
25 C
Temperature ( C)
Tsmin
Tsmax
Tp
tLSoldering zone
Ramp-down
TL
(2) When using another soldering method such as infrared ray lamp, the temperature may rise
partially in the mold of the device.
Keep the temperature on the package of the device within the condition of above (1)
Part No. :
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LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
Notes:
- Lite-On is continually improving the quality, reliability, function or design and
Lite-On reserves the right to make changes without further notices.
- The products shown in this publication are designed for the general use in electronic
applications such as office automation equipment, communications devices,
audio/visual equipment, electrical application and instrumentation.
- For equipment/devices where high reliability or safety is required, such as space
applications, nuclear power control equipment, medical equipment, etc, please
contact our sales representatives.
- When requiring a device for any specific application, please contact our sales in
advice.
- If there are any questions about the contents of this publication, please contact us at
your convenience.
- The contents described herein are subject to change without prior notice.
- Immerse body in solder paste is not recommended.
Part No. :
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