© 2001
PNP SILICO N EPITAXIAL TRANSI STO R
2SA1836
PNP SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. D15615EJ1V0DS00 (1st edition)
Date Published July 2001 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SA1836 is PNP silicon epitaxial transistor.
FEATURES
•High DC current gain: hFE2 = 200 TYP.
•High voltage: VCEO = −50 V
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage VCBO −60 V
Collector to Emitter Voltage VCEO −50 V
Emitter to Base Voltage VEBO −5.0 V
Collector Current (DC) IC(DC) −100 mA
Collector Current (pulse) Note1 IC(pulse) −200 mA
Total Power Dissipation (TA = 25°C) Note2 PT200 mW
Junction Temperature Tj150 °C
Storage Temperature Range Tstg –55 to + 150 °C
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%
2. When mounted on ceramic substrate of 3.0 cm2 x 0.64 mm
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTE RISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Collect or Cut-off Current ICBO VCB = −60 V, IE = 0 −100 nA
Emitter Cut-off Current IEBO VEB = −5.0 V, I C = 0 −100 nA
DC Current Gain Note hFE1 VCE = −6.0 V , IC = −0.1 m A 50 −
hFE2 VCE = −6.0 V, I C = −1. 0 mA 90 200 600 −
Base to E mit ter Volt age Note VBE VCE = −6.0 V, IC = −1.0 m A −0.62 V
Collect or Saturati on V ol tage Note VCE(sat) IC = −100 m A, IB = −10 mA −0.18 −0.3 V
Base Saturation V ol t age Note VBE(sat) IC = −100 m A , IB = −10 mA −0.86 −1.0 V
Gain Bandwidth Product fTVCE = −6.0 V , IE = 10 m A 50 180 MHz
Output Capaci tance Cob VCE = −6.0 V, I E = 0, f = 1.0 MHz 4.5 6.0 pF
Note Pulsed: PW ≤ 350
µ
s, Duty Cycle ≤ 2%
hFE CLASSFICATION
MarkingM4M5M6M7
hFE2 90 to 180 135 to 270 200 to 400 300 to 600
PACKAGE DRAWING (Unit: mm)
0.3 ± 0.05
1.6 ± 0.1
0.8 ± 0.1
2
0.2
+0.1
–0
0.5
1: Emitter
2: Base
3: Collector
0.5
1.0
1.6 ± 0.1
3
1
0.6
0.75 ± 0.05
0 to 0.1
0.1
+0.1
–0.05
Data Sheet D15615EJ1V0DS
2
2SA1836
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
- Ambient Temperature - ˚C
P
T
- Total Power Dissipation - mW
0100 1257525 150
200
300 Free air
250
150
50
50
100
When mounted on ceramic substrate of 3.0 cm x 0.64 mm
2
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
VBE - Base to Emitter Voltage - V
IC - Collector Current - mA
−0.4 −0.5 −0.6 −0.7 −0.8 −0.9 −1.0
−100
−10
−30
−1
−3
−0.1
−0.3
−0.01
−0.03
T
A
= 75˚C
25˚C
–25˚C
VCE = −6.0 V
COLLECTOR CURRENT vs. COLLECTOR TO
EMITTER VOLTAGE
0−0.2 −0.4 −0.6 −0.8 −1.0
−100
−80
−60
−40
−20
−0.4
−0.6
−0.8
−1.0
−1.4
−1.6
−2.0
−1.8
−1.2
IB = −0.2 mA
VCE - Collector to Emitter Voltage - V
IC - Collector Current - mA
COLLECTOR AND BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
−5−2−1−10 −100−20 −50
−1
−0.2
−0.5
−0.1
−0.05
−0.02
−0.01
IC = 10 IB
.
I
C
- Collector Current - mA
V
BE(sat)
- Base Saturation Voltage - V
V
CE(sat)
- Collector Saturation Voltage - V
V
CE(sat)
V
BE(sat)
VCE - Collector to Emitter Voltage - V
IC - Collector Current - mA
COLLECTOR CURRENT vs. COLLECTOR TO
EMITTER VOLTAGE
−20−10 −30 −40
−8
−6
−4
−2
0
IB = −5.0 µA
−40
−35
−30
−25
−20
−15
−10
−45
OUTPUT CAPACITANCE vs. REVERSE VOLTAGE
−5−2−1−10 −100−20 −50
10
2
5
1
0.5
0.2
0.1
f = 1.0 MHz
V
CB
- Collector to Base Voltage - V
C
ob
- Output Capacitance - pF
Data Sheet D15615EJ1V0DS 3
2SA1836
GAIN BANDWIDTH PRODUCT vs.
EMITTER CURRENT
521 10 10020 50
1000
200
500
100
50
20
10
I
E
- Emitter Current - mA
f
T
- Gain Bandwidth Product - MHz
V
CE
= −6 V
−1 V
DC CURRENT GAIN vs. COLLECTOR CURRENT
−1−0.3−0.1 −3−100−10 −30
1000
500
200
100
50
20
10
I
C
- Collector Current - mA
h
FE
- DC Current Gain
V
CE
= −6 V
−1 V
2SA1836
M8E 00. 4
The information in this document is current as of July, 2001. The information is subject to change
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