2000. 2. 28 1/2
SEMICONDUCTOR
TECHNICAL DATA
BC327
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
ᴌHigh Current : IC=-800mA.
ᴌDC Current Gain : hFE=100ᴕ630 (VCE=-1V, Ic=-100mA).
ᴌFor Complementary with NPN type BC337.
MAXIMUM RATING (Ta=25ᴱ)
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2 3
B
AJ
KG
H
FF
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. COLLECTOR
2. BASE
3. EMITTER
+
_
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -45 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC-800 mA
Emitter Current IE800 mA
Collector Power Dissipation PC625 mW
Junction Temperature Tj150 ᴱ
Storage Temperature Range Tstg -55ᴕ150 ᴱ
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-45V, IE=0 - - -100 nA
DC Current Gain (Note) hFE VCE=-1V, IC=-100mA 100 - 630
Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - - -0.7 V
Base-Emitter Voltage VBE(ON) VCE=-1V, IC=-300mA - - -1.2 V
Transition Frequency fTVCE=-5V, IC=-10mA, f=100MHz - 100 - MHz
Collector Output Capacitance Cob VCB=-10V, f=1MHz, IE=0 - 16 - pF
Note : hFE Classification none:100ᴕ630, 16:100ᴕ250, 25:160ᴕ400, 40:250ᴕ630
2000. 2. 28 2/2
BC327
Revision No : 2
C
COLLECTOR CURRENT I (mA)
0
P (mW)
0
C
0
AMBIENT TEMPERATURE Ta ( C)
C
P - Ta
10
DC CURRENT GAIN hFE
-1k-300-3-1
COLLECTOR CURRENT I (mA)
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CEC
I -V (LOW VOLTAGE REGION)
h - I
-1
COLLECTOR CURRENT I (mA)
C
-0.2
BASE-EMITTER VOLTAGE V (V)
BE
I - V
STATIC CHARACTERISTICS
B
BASE CURRENT
-0.8
-1.0
I (mA)
C
V - I
C
COLLECTOR CURRENT I (mA)
-1 -3 -300 -1k
-0.01
CE(sat)
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENTBASE-EMITTER
BE
VOLTAGE V (V)
I (mA) VOLTAGE V (V)
COLLECTOR-EMITTER
CE
-0.6 -0.4 -0.2 0 -10 -20 -30 -40
-0.8
-0.6
-0.4
-0.2
0
-200
-400
-600
-800
-1k
COMMON
EMITTER
Ta=25 C
-9
-8
-7
-6 -5
-4 -3
-2
I =-1mA
0
B
V =-1V
CE
CE
V =-1V
-1 -2 -3 -4 -5 -6
-200
-400
-600
-800
-1000
-1200
-8 -7
-6
-5
-4
-3
-2
0
I =-1mA
B
CBE
-0.4 -0.6 -0.8 -1.0
-3
-10
-30
-100
-300
-1k
-5k COMMON EMITTER
V =-1V
CE
Ta=100 C
Ta=25 C
Ta=-25 C
FE C
-100-30-10
30
100
300
1k
3k
50
500
COMMON EMITTER
V =-1V
CE
Ta=100 C
Ta=25 C
Ta=-25 C
CE(sat) C
VOLTAGE V (V)
-100-30-10
-0.03
-0.1
-0.3
-1
-3 COMMON EMITTER
I /I =25
CB
Ta=100 C Ta=25 C
Ta=-25 C
CE
V =-5V
COMMON EMITTER
500
100
30
-10 -30 -100
TRANSITION FREQUENCY
C
T
T
10
-1k-300-3-1
COLLECTOR CURRENT I (mA)
C
f - I
f (MHz)
300 Ta=25 C
COLLECTOR POWER DISSIPATION
25 50 75 100 125 150 175
100
200
300
400
500
600
700
COMMON EMITTER
Ta=25 C
