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Page <1> V1.025/02/13
Silicon Epitaxial
Planar Diode
Features:
• Fast Switching Speed
• Surface Mount Package Ideally Suited for
Automatic Insertion
• For General Purpose Switching Applications
• High Conductance
Applications:
Surface mount fast switching diode
Max. Rating @ Ta = 25°C unless otherwise specied
Parameter Symbol Limits Unit
Repetitive peak reverse voltage Vrrm 250 V
Working peak reverse voltage
DC reverse voltage
Vrms
Vr200 V
RMS reverse voltage Vr(rms)141 V
Forward continuous current Ifm 400 mA
Average rectied output current Io200 mA
Non-Repetitive peak forward surge current
@t=1μs
@t=1s
Ifsm
2.5
0.5
mA
Repetitive peak forward surge current Ifrm 625 mA
Power dissipation Pd200 mW
Thermal resistance junction to ambient air Rθja 625 °C/W
Operating and storage temperature range Tj, Tstg -65 to +150 °C
Electrical Characteristics @ Ta = 25°C unless otherwise specied
Parameter Symbol Conditions Min. Max. Unit
Forward voltage Vfm If = 100mA
If = 200mA -1
1.25 V
Reverse current IrVr = 150V - 0.1 μA
Capacitance between terminals CtVr = 0V, f = 1MHz - 5 pF
Reverse recovery time trr If = Ir = 30mA,
Irr = 0.1 × Ir, Rl = 100Ω - 50 ns