WESTCODE SEMICONDUCTORS 35E D MM 97059955 0002601 2 MBWESB 7-637-aQa3 Ge) WESTCODE SEMICONDUCTORS Fast Recovery Capsule Diode Type CXC170 438 amperes average: up to 1200 volts Vrrm Ratings (Maximum values at Tj 125C unless stated otherwise) Technical Publication DFC170 Issue 2 April 1988 RATING CONDITIONS SYMBOL 55C heatsink temperature le (avy 438A : (double side cooled) Average forward current Half sine wave 100C heatsink temperature tray) 114A (single side cooled) R.M.S. current (max.) THs = 25C le (RMS) 880A D.C. forward current (max.) Tus = 25C lr 727A Peak one-cycle surge 10ms sine pulse 60% VeRM re-applied (max.) lesm (yy 4500A non-repetitive Vem < 10 volts lFsm (2} 4950A : . 60% Var re-applied (max.) It (4) 101000A?s a I Maximum surge I*t 10ms sine pulse 1 < 10 volts Ito) 122000A2s 3ms sine pulse Vam = 10 volts 17t(ay 91000A2s Operating temperature range Ths ~A0 +125C Storage temperature range Tstg 40 +150C Characteristics (Maximum values at Tj 125C unless stated otherwise) CHARACTERISTIC CONDITIONS SYMBOL Peak forward volt drop At 635A len Vem 1.47V Forward conduction threshold voltage Vo 1.02V Forward conduction slope resistance r 0.7m Peak reverse current Vam = Varn (max.) InRM 20mMA Thermal resistance Double side cooled Rth (-hs) 0.09C/W junction to heatsink Single side cooled Rth (-hs) 0.18C/W Reverse recovered charge len = 550A, di/dt = 40 A/us Qer 75pC Vam = 50V VOLTAGE CODE 02 04 06 08 10 12 Repetitive voltage Varo 200 400 600 800 1000 1200 Non-repetitive voltage Vasm 300 500 700 900 1100 1300 Ordering Information (Please quote device code as explained below 10 digits) S$ M e e Cc X Cc 1 7 0 FIXED BASIC VOLTAGE CODE FIXED OUTLINE FIXED TYPE CODE (see above) CODE CODE Typical code: SMO8CXC170 = 800Varm capsule diodeWESTCODE SEMICONDUCTORS 1. (a) (b) (c) (a) INTRODUCTION The SM2-12CXC170 diode series comprises fast recovery cold-weld capsules with 24mm all diffused silicon slices. All these diodes have controlled reverse recovery characteristics with good S factors. These devices will find applications as free wheel diodes in transistor switching circuits. NOTES ON THE RATINGS Square wave ratings These ratings are given for leading edge linear rates of rise of forward current of 100 and 200A/s. Energy per pulse characteristics These curves, when used in conjunction with those for the appropriate junction temperature rise, (b) enable maximum operating frequencies and dissipations to be obtained. Junction temperature rise per pulse Single pulse junction temperature rises are given for all rating conditions. Let: Ep bethe Energy per pulse for a given current and pulse width, in Joules T be the appropriate junction temperature rise, in degrees Centigrade Rg be the steady-state thermal resistance (junction to sink) and Tsinxk be the heat sink temperature the operating frequency may be obtained from f= 125-T-tsink EpRe and the dissipation will be Wav = Epf REVERSE RECOVERY LOSS On account of the number of circuit variables affecting reverse recovery voltage, no allowance for reverse recovery loss has been made in the forward ratings. The following procedure is 4. suggested when it is necessary to include reverse recovery loss. Determination by Measurement From waveforms of recovery current obtained (a) from a high frequency shunt (see Note 1) and reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed. Let the area under this (b) waveform be A microjoules per pulse. An additional junction temperature rise per pulse can then be evaluated from: 35E D MM 97095955 0002602 4 MBUWESB 7-03-23 Total Ty rise per pulse = Forward T, rise per pulse + Ar t where rt = 1.64 x 104 yt where t= duration of reverse recovery loss per pulse in microseconds where A= Area under reverse loss waveform per pulse in microjoules The Energy per pulse must also be modified to include the reverse recovery loss by adding A x 10 Joules to the forward energy per pulse values. Determination without measurement Junction temperature rise per pulse per volt and Reverse Recovery Energy per pulse per volt curves are given for cases where it is not possible to measure the voltage and current conditions during reverse recovery. The Figure below shows the idealised situation during reverse recovery. In practice the reverse voltage has an initial overshoot (by an amount inversely proportional to the S Factor) and then settles to a steady state during the recovery tail. This method assumes that full voltage is present throughout the recovery. _\_, <+_ forward voltage t current and voltage zero #- reverse recovery current commutating di/dt t typical reverse voltage reverse voltage The values obtained from these curves must be multiplied by the reverse voltage. NOTE 1 REVERSE RECOVERY LOSS BY MEASUREMENT When measuring the reverse recovered charge care must be taken to ensure that: a.c. coupled devices such as current transformers are avoided, as they tend to exaggerate the apparent charge (due to the prior passage of forward current). The measuring oscilloscope has adequate dynamic range typically 100 screen heights to cope with the initial forward current without overload.WESTCODE SEMICONDUCTORS 35E D mm@ 9709955 0002603 & MBWESB T2323 100 100 100 Ths = 85C 100 A/ps Ths = 85C 200 A/us square wave Ths = 56C 200 A/us square wave re wave 10 10 10 0.1 0.1 0.1 N 2 z x o 3 od 2 2 zs g o 8 0.01 = 0.01 = 0.01 0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10 pulse width, m.secs pulse width, m.secs pulse width, m.secs Figure 1 Frequency v. pulse width Figure2 Frequency v. pulse width Figure5 Frequency v. pulse width 100 100 100 = 125C = 200 A/us 100 A/us uare uare wave 10 10 10 1 1 3 8 3 2 3 g 01 g g 01 a 2 a a g 200 A/S & o o uare 5 0.01 2 014 5 0.01 0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10 pulse width, m.secs pulse width, m.secs pulse width, m.secs Figure 3 Energy per pulse v. pulse Figure4 Temperature rise per Figure 7 Energy per pulse v. pulse width pulse v. pulse width width 1 0.3 wn 3 & 0.1 Figure 13 Max. reverse energy loss per pulse per recovery volt at Tj 125C g 3 2 0.03 o Qa > a 3 c & 0,01 10 20 50 100 200 commutating di/dt, A/usWESTCODE SEMICONDUCTORS 100 hs = 100 A/pus square wave 10 0.1 frequency, KHz 0.01 0.01 0.1 1 10 pulse width, m.secs Figure6 Frequency v. pulse width 100 10 1 Y o & 2 = 8 = 125C a 100 A/pts S01 uare 0.01 0.1 1 10 pulse width, m.secs Figure8 Temperature rise per pulse v. pulse width 0.1 0.03 0.01 0.003 junction temperature rise per pulse per volt, C 0.001 10 20 50 commutating di/dt, A/us 39E D MM 9709955 0002604 & MBWESBT-03-43 100 Ivy Tr Ths = 85C sine wave 0.1 frequency, KHz 9.01 0.01 0.1 1 10 pulse width, m.secs Figure9 Frequency v. pulse width 100 wo 2 = 2 3 0.1 a 3 a 3 z Tj = 125C 5 ine wav 2 oo sine wave 0.01 0.4 1 10 pulse width, m.secs Figure 11 Energy per pulse v. pulse width 200 100 oo Ths = 55C =: sine wave ~~ nary rhs ip 1 1 10 S a frequency, KHz 0.01 0.01 0.1 1 10 pulse width, m.secs Figure 10 Frequency v. pulse width 100 10 en 1 9 . . B 5 or 3 | 8 | = 125C a 8 01 sine wave 0.01 0.1 1 10 pulse width, m.secs Figure 12 Temperature rise per pulse v. pulse width Figure 14 Max. junction temperature rise per pulse per recovery volt at Tj 125CWESTCODE SEMICONDUCTORS 200 100 50 30 recovered charge, Q,,, microcoulombs 10 10 20 50 100 200 commutating di/dt, A/us Figure 15 Maximum recovered charge at Tj 125C max. permissible heatsink temperature, C 200 max. forward dissipation, watts 0 300 400 500 600 700 100 200 mean forward current, amperes (whole cycle average) Figure 17 Dissipation and heatsink temperature v. current (double side cooled), 50Hz 39 D M@M@ 9709955 0002605 T MBWESB 7-6323 1.1 1.0 0.9 S NI S factor 0.6 10 20 50 100 200 recovered charge, nC Figure 16 Minimum S factor at T; 125C max. permissible heatsink temperature, C 0 100 200 300 400 500 500 400 300 200 100 max. forward dissipation, watts Q 0 100 200 300 400 500 mean forward current, amperes (whole cycle average) Figure 18 Dissipation and heatsink temperature v. current (single side cooled), 50HzWESTCODE SEMICONDUCTORS 1.0 0.1 0.01 thermal impedance, C/W 0.001 0.001 0.01 0.1 1 10 time, seconds Figure 19 Junction to heatsink transient thermal 39 D MM 9709955 ooO2b0b 1 MEUESB 8 8 1000 / instantaneous forward current, amperes 100 1.0 1.2 14 1.6 18 2.0 22 2.4 max. instantaneous forward voltage, volts - ) Figure 20 Forward voltage characteristic of impedance limit diode g 100 10 3 a E50 a 2 a = g 3 5 10 10 a a z e f& & 5 = 3 g a Ursa: Viwws 3 3 2 1 10* 5 50 100 s m.secs cycles at 50Hz j duration of surge Figure21 Max. non-repetitive surge current at initial junction temperature 125C G42 (1.65) COMPRESSED HEIGHT. @19 -15) ro3 (.01) t + _.__G 14.4/13.4 1) (.56/.51) 036x1.9 [219 (14.075) _(-75) 2-HOLES. DO -200AA x CREEP PATH amm MIN. dimensions in mm (inches) mounting force: 330-550Kgf weight: 70 grams In the interest of product improvement, Westcode reserves the right to change specifications at any time without notice. WESTCODE SEMICONDUCTORS LIMITED P.O. Box 57, Chippenham, Wiltshire, England SN15 1JL Telephone: (Sales) 0249 444524 Telex: 44751 Telefax: 0249 659448 fe HAWKER SIDDELEY Westinghouse Brake and Signal Co. Ltd.