DISCRETE SEMICONDUCTORS DATA SHEET BAS16W High-speed diode Product specification Supersedes data of 1996 Sep 10 Philips Semiconductors 1999 May 06 PHILIPSPhilips Semiconductors Product specification | High-speed diode BAS16W | FEATURES DESCRIPTION PINNING e Very small plastic SMD package The BAS16W is a high-speed PIN DESCRIPTION * High switching speed: max. 4 ns switching diode fabricated in planar , anode . technology, and encapsulated in the ventinis reverse voltage: very small plastic SMD SOT323 2 not connected max. package. 3 cathode Repetitive peak reverse voltage: max. 85 V * Repetitive peak forward current: max. 500 mA. 2 1 APPLICATIONS 2 1 High-speed switching in e.g. me surface mounted circuits. 3 ; MAMO95 Top view Marking code: A6. Fig.1 Simplified outline (SOT323; SC-70) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VeRM repetitive peak reverse voltage - 85 Vv Ver continuous reverse voltage - 75 Vv lr continuous forward current see Fig.2; note 1 - 175 mA lFRM repetitive peak forward current - 500 mA lFsm non-repetitive peak forward square wave; Tj = 25 C prior to current surge; see Fig.4 t=1 us 4 A t=1ms - 1 A t=1s - 0.5 A Pot total power dissipation Tamb = 25 C; note 1 - 200 mW Tstg storage temperature 65 +150 C Tj junction temperature - 150 C Note 1. Device mounted on an FR4 printed-circuit board. 1999 May 06 2Philips Semiconductors Product specification High-speed diode BAS16W ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Ve forward voltage see Fig.3 le=1mA 715 mV lF=10 mA 855 mV IF =50 mA 1 Vv IF = 150 mA 1.25 Vv IR reverse current see Fig.5 Va=25V 30 nA VRa=/75V 1 mA VR = 25 V; Tj = 150 C 30 mA VR = 75 V;, T; = 150 C; 50 mA Cg diode capacitance f= 1 MHz; VR = 0; see Fig.6 1.5 pF ber reverse recovery time when switched from lp =10 mAto |4 ns Ip = 10 mA; Ry = 100 Q; measured at Ip = 1 mA; see Fig.7 Ver forward recovery voltage when switched from Ip = 10 mA; 1.75 V t, = 20 ns; see Fig.8 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Ruth j-tp thermal resistance from junction to tie-point 300 KAV Rin j-a thermal resistance from junction to ambient note 1 625 KAN Note 1. Device mounted on an FR4 printed-circuit board. 1999 May 06Philips Semiconductors Product specification High-speed diode BAS16W GRAPHICAL DATA 200 MGAS87 300 MBG382 IF Ir (ma) (mA) N \ 200 100 \ \ 100 Q 100 Tamb (C} 200 0 1 Ve W) 2 (1) Tj = 150 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient Fig.3 Forward current as a function of forward temperature. voltage. MBG704 102 IFSM f(A} io! 1 10 107 10 ty (Lis) Based on square wave currents. Tj = 25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1999 May 06 4Philips Semiconductors Product specification High-speed diode BAS16W MBG46 0.8 (pF) 0.6 04 0.2 100 T, (C) 200 0 4 8 12 Vp (W) 16 f= 1 MHz; T, = 25C. Fig.6 Reverse current as a function of junction Fig.6 Diode capacitance as a function of reverse temperature. voltage; typical values. 1999 May 06 5Philips Semiconductors Product specification High-speed diode BAS16W tr tp 10% 4 tip et pp + SAMPLING t t OSCILLOSCOPE a V=VpatlpxRg R,=50 2 | Ve 90% f a MGAgai Rg = 50 Q input signal output signal (1) Ig=1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. ly tka 450 9 cS v 90% Rg= 50 & OSCILLOSCOPE Vv TL D.ULT. | 10% MGABBE 1 1 Rj, =50 2 Fig.8 Forward recovery voltage test circuit and waveforms. e! 1, ip input signal output signal 1999 May 06Philips Semiconductors Product specification High-speed diode BAS16W PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 rr | | | 1 y | 3 t Q t A | AY _ +f a c 1 2 ' } [eq] > i | <b] w ad] B | lp +] + 0 1 2mm bap ppp scale DIMENSIONS (mm are the original dimensions) Ay UNIT | A max | OP c D E e e He | Lp Q v w 14 04 | 025] 22 | 1.35 22 | 045 | 0.23 mm os | os | oto] 18 | 145 | 13 | 88] 30 J ois | o13 | 9? | 2? REFERENCES OUTLINE ORCL CTION ISSUE DATE VERSION IEC JEDEC EIAJ SOT323 SC-70 a 97-02-28 1999 May 06 7Philips Semiconductors Product specification High-speed diode BAS16W DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 May 06 8Philips Semiconductors Product specification High-speed diode BAS16W NOTES 1999 May 06 gPhilips Semiconductors Product specification High-speed diode BAS16W NOTES 1999 May 06 10Philips Semiconductors Product specification High-speed diode BAS16W NOTES 1999 May 06 11Philips Semiconductors Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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