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NM93C46A Rev. F
NM93C46A 1K-Bit Serial CMOS EEPROM
(MICROWIRETM Synchronous Bus)
February 2000
© 2000 Fairchild Semiconductor International
NM93C46A
1K-Bit Serial CMOS EEPROM
(MICROWIRE™ Synchronous Bus)
General Description
NM93C46A is a 1024-bit CMOS non-volatile EEPROM organized
as 64 x 16-bit array. This device features MICROWIRE interface
which is a 4-wire serial bus with chipselect (CS), clock (SK), data
input (DI) and data output (DO) signals. This interface is compat-
ible to many of standard Microcontrollers and Microprocessors.
This device offers a pin (ORG), using which, the user can select
the format of the data (16-bit or 8-bit). If ORG is tied to GND, then
8-bit format is selected, while if ORG is tied to VCC, then 16-bit
format is selected. There are 7 instructions implemented on the
NM93C46A for various Read, Write, Erase, and Write Enable/
Disable operations. This device is fabricated using Fairchild
Semiconductor floating-gate CMOS process for high reliability,
high endurance and low power consumption.
“LZ” and “L” versions of NM93C46A offer very low standby current
making them suitable for low power applications. This device is
offered in both SO and TSSOP packages for small space consid-
erations.
Functional Diagram
Features
Wide VCC 2.7V - 5.5V
User selectable organization
x16 (ORG = 1)
x8 (ORG = 0)
Typical active current of 200µA
10µA standby current typical
1µA standby current typical (L)
0.1µA standby current typical (LZ)
No Erase instruction required before Write instruction
Self timed write cycle
Device status during programming cycles
40 year data retention
Endurance: 1,000,000 data changes
Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP
INSTRUCTION
DECODER
CONTROL LOGIC
AND CLOCK
GENERATORS
HIGH VOLTAGE
GENERATOR
AND
PROGRAM
TIMER
INSTRUCTION
REGISTER
ADDRESS
REGISTER
EEPROM ARRAY
READ/WRITE AMPS
DATA IN/OUT REGISTER
16/8 BITS
DECODER
16
16
DATA OUT BUFFER
CS
SK
DI
ORG
DO
V
SS
V
CC
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NM93C46A Rev. F
NM93C46A 1K-Bit Serial CMOS EEPROM
(MICROWIRETM Synchronous Bus)
Connection Diagram
Dual-In-Line Package (N)
8–Pin SO (M8) and 8–Pin TSSOP (MT8)
Top View
Package Number
N08E, M08A and MTC08
Pin Names
CS Chip Select
SK Serial Data Clock
DI Serial Data Input
DO Serial Data Output
GND Ground
ORG Organization
NC No Connect
VCC Power Supply
NOTE: Pins designated as "NC" are typically unbonded pins. However some of them are bonded for special testing purposes. Hence if a signal is applied to these pins, care
should be taken that the voltage applied on these pins does not exceed the VCC applied to the device. This will ensure proper operation.
Ordering Information
NM 93 CXX A T LZ EXXX Letter Description
Package N 8-pin DIP
M8 8-pin SO
MT8 8-pin TSSOP
Temp. Range None 0 to 70°C
V -40 to +125°C
E -40 to +85°C
Voltage Operating Range Blank 4.5V to 5.5V
L 2.7V to 5.5V
LZ 2.7V to 5.5V and
<1µA Standby Current
Blank Normal Pinout
T Rotated Pinout
A x8 or x16 configuration
Density 46 1024 bits
C CMOS
CS Data protect and sequential
read
Interface 93 MICROWIRE
Fairchild Memory Prefix
VCC
ORG
GND
CS
SK
DI
DO
1
2
3
4
8
7
6
5
NC
ORG
DO
DI
NC
VCC
CS
SK
1
2
3
4
8
7
6
5
GND
Normal
Pinout
Rotated
Pinout
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NM93C46A Rev. F
NM93C46A 1K-Bit Serial CMOS EEPROM
(MICROWIRETM Synchronous Bus)
Absolute Maximum Ratings (Note 1)
Ambient Storage Temperature -65°C to +150°C
All Input or Output Voltages +6.5V to -0.3V
with Respect to Ground
Lead Temperature
(Soldering, 10 sec.) +300°C
ESD rating 2000V
Operating Conditions
Ambient Operating Temperature
NM93C46A 0°C to +70°C
NM93C46AE -40°C to +85°C
NM93C46AV -40°C to +125°C
Power Supply (VCC) 4.5V to 5.5V
DC and AC Electrical Characteristics VCC = 4.5V to 5.5V unless otherwise specified
Symbol Parameter Conditions Min Max Units
ICCA Operating Current CS = VIH, SK=1.0 MHz 1 mA
ICCS Standby Current CS = VIL 50 µA
IIL Input Leakage VIN = 0V to VCC ±-1 µA
IOL Output Leakage (Note 2)
IILO Input Leakage ORG Pin ORG tied to VCC -1 1 µA
ORG tied to VSS (Note 3) -2.5 2.5
VIL Input Low Voltage -0.1 0.8 V
VIH Input High Voltage 2 VCC +1
VOL1 Output Low Voltage IOL = 2.1 mA 0.4 V
VOH1 Output High Voltage IOH = -400 µA 2.4
VOL2 Output Low Voltage IOL = 10 µA 0.2 V
VOH2 Output High Voltage IOH = -10 µAV
CC - 0.2
fSK SK Clock Frequency (Note 4) 1 MHz
tSKH SK High Time 0°C to +70°C 250 ns
-40°C to +125°C 300
tSKL SK Low Time 250 ns
tSKS SK Setup Time 50 ns
tCS Minimum CS Low Time (Note 5) 250 ns
tCSS CS Setup Time 100 ns
tDH DO Hold Time 70 ns
tDIS DI Setup Time 100 ns
tCSH CS Hold Time 0 ns
tDIH DI Hold Time 20 ns
tPD Output Delay 500 ns
tSV CS to Status Valid 500 ns
tDF CS to DO in Hi-Z CS = VIL 100 ns
tWP Write Cycle Time 10 ms
4www.fairchildsemi.com
NM93C46A Rev. F
NM93C46A 1K-Bit Serial CMOS EEPROM
(MICROWIRETM Synchronous Bus)
Absolute Maximum Ratings (Note 1)
Ambient Storage Temperature -65°C to +150°C
All Input or Output Voltages +6.5V to -0.3V
with Respect to Ground
Lead Temperature
(Soldering, 10 sec.) +300°C
ESD rating 2000V
Operating Conditions
Ambient Operating Temperature
NM93C46AL/LZ 0°C to +70°C
NM93C46ALE/LZE -40°C to +85°C
NM93C46ALV/LZV -40°C to +125°C
Power Supply (VCC) 2.7V to 5.5V
DC and AC Electrical Characteristics VCC = 2.7V to 5.5V unless otherwise specified
Symbol Parameter Conditions Min Max Units
ICCA Operating Current CS = VIH, SK=1.0 MHz 1 mA
ICCS Standby Current CS = VIL
L10 µA
LZ (2.7V to 4.5V) 1µA
IIL Input Leakage VIN = 0V to VCC ±1µA
IOL Output Leakage (Note 2)
IILO Input Leakage ORG Pin ORG tied to VCC -1 1 µA
ORG tied to VSS (Note 3) -2.5 2.5
VIL Input Low Voltage -0.1 0.15VCC V
VIH Input High Voltage 0.8VCC VCC +1
VOL Output Low Voltage IOL = 10µA 0.1VCC V
VOH Output High Voltage IOH = -10µA 0.9VCC
fSK SK Clock Frequency (Note 4) 0 250 KHz
tSKH SK High Time 1 µs
tSKL SK Low Time 1 µs
tSKS SK Setup Time 0.2 µs
tCS Minimum CS Low Time (Note 5) 1 µs
tCSS CS Setup Time 0.2 µs
tDH DO Hold Time 70 ns
tDIS DI Setup Time 0.4 µs
tCSH CS Hold Time 0 ns
tDIH DI Hold Time 0.4 µs
tPD Output Delay 2µs
tSV CS to Status Valid 1µs
tDF CS to DO in Hi-Z CS = VIL 0.4 µs
tWP Write Cycle Time 15 ms
Capacitance TA = 25°C, f = 1 MHz (Note 6)
Symbol Test Typ Max Units
COUT Output Capacitance 5 pF
CIN Input Capacitance 5 pF
Note 1: Stress above those listed under Absolute Maximum Ratings may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of the specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect device reliability.
Note 2: Typical leakage values are in the 20nA range.
Note 3: ORG pin may draw >1µA when in x8 mode due to the internal pull-up transistor.
Note 4: The shortest allowable SK clock period = 1/fSK (as shown under the fSK parameter). Maximum
SK clock speed (minimum SK period) is determined by the interaction of several AC parameters stated
in the datasheet. Within this SK period, both tSKH and tSKL limits must be observed. Therefore, it is not
allowable to set 1/fSK = tSKHminimum + tSKLminimum for shorter SK cycle time operation.
Note 5: CS (Chip Select) must be brought low (to VIL) for an interval of tCS in order to reset all internal
device registers (device reset) prior to beginning another opcode cycle. (This is shown in the opcode
diagram on the following page.)
Note 6: This parameter is periodically sampled and not 100% tested.
AC Test Conditions
VCC Range VIL/VIH VIL/VIH VOL/VOH IOL/IOH
Input Levels Timing Level Timing Level
2.7V VCC 5.5V 0.3V/1.8V 1.0V 0.8V/1.5V ±10µA
(Extended Voltage Levels)
4.5V VCC 5.5V 0.4V/2.4V 1.0V/2.0V 0.4V/2.4V 2.1mA/-0.4mA
(TTL Levels)
Output Load: 1 TTL Gate (CL = 100 pF)
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NM93C46A Rev. F
NM93C46A 1K-Bit Serial CMOS EEPROM
(MICROWIRETM Synchronous Bus)
Pin Description
Chip Select (CS)
This is an active high input pin to NM93C46A EEPROM (the device)
and is generated by a master that is controlling the device. A high
level on this pin selects the device and a low level deselects the
device. All serial communications with the device is enabled only
when this pin is held high. However this pin cannot be permanently
tied high, as a rising edge on this signal is required to reset the
internal state-machine to accept a new cycle and a falling edge to
initiate an internal programming after a write cycle. All activity on the
SK, DI and DO pins are ignored while CS is held low.
Serial Clock (SK)
This is an input pin to the device and is generated by the master that
is controlling the device. This is a clock signal that synchronizes the
communication between a master and the device. All input informa-
tion (DI) to the device is latched on the rising edge of this clock input,
while output data (DO) from the device is driven from the rising edge
of this clock input. This pin is gated by CS signal.
Serial Input (DI)
This is an input pin to the device and is generated by the master
that is controlling the device. The master transfers Input informa-
tion (Start bit, Opcode bits, Array addresses and Data) serially via
this pin into the device. This Input information is latched on the
rising edge of the SCK. This pin is gated by CS signal.
Serial Output (DO)
This is an output pin from the device and is used to transfer Output
data via this pin to the controlling master. Output data is serially
shifted out on this pin from the rising edge of the SCK. This pin is
active only when the device is selected.
Organization (ORG)
This is an input pin to the device and is used to select the format
of data (16-bit or 8-bit). If this pin is tied high, 16-bit format is
selected, while if it is tied low, 8-bit format is selected. Depending
on the format selected, NM93C46A requires 6-bit address field
(for 16-bit data format) or 7-bit address field (for 8-bit data format).
Refer Table 1 and Table 2 for more details. This pin is internally
pulled-up to VCC. Hence leaving this pin unconnected would
default to 16-bit data format.
Microwire Interface
A typical communication on the Microwire bus is made through the
CS, SK, DI and DO signals. To facilitate various operations on the
Memory array, a set of 7 instructions are implemented on
NM93C46A. The format of each instruction is listed under Table
1 (for 16-bit format) and Table 2 (for 8-bit format).
Instruction
Each of the above 7 instructions is explained under individual
instruction descriptions.
Start bit
This is a 1-bit field and is the first bit that is clocked into the device
when a Microwire cycle starts. This bit has to be 1 for a valid cycle
to begin. Any number of preceding 0 can be clocked into the
device before clocking a 1.
Opcode
This is a 2-bit field and should immediately follow the start bit.
These two bits (along with 2 MSB of address field) select a
particular instruction to be executed.
Address Field
Depending on the selected organization, this is a 6-bit or 7-bit field
and should immediately follow the Opcode bits. In NM93C46A, all
6 bits (or 7 bits) are used for address decoding during READ,
WRITE and ERASE instructions. During all other instructions, the
MSB 2 bits are used to decode instruction (along with Opcode bits).
Data Field
Depending on the selected organization, this is a 16-bit or 8-bit
field and should immediately follow the Address bits. Only the
WRITE and WRALL instructions require this field. MSB bit (D15 or
D7) is clocked first and LSB bit (D0) is clocked last (both during
writes as well as reads).
Table 1. Instruction set (16-bit organization)
Instruction Start Bit Opcode Field Address Field Data Field
READ 1 10 A5 A4 A3 A2 A1 A0
WEN 1 00 11XXXX
WRITE 1 01 A5 A4 A3 A2 A1 A0 D15-D0
WRALL 1 00 0 1 XXXX D15-D0
WDS 1 00 00XXXX
ERASE 1 11 A5 A4 A3 A2 A1 A0
ERAL 1 00 1 0 XXXX
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NM93C46A Rev. F
NM93C46A 1K-Bit Serial CMOS EEPROM
(MICROWIRETM Synchronous Bus)
Functional Description
A typical Microwire cycle starts by first selecting the device
(bringing the CS signal high). Once the device is selected, a valid
Start bit (1) should be issued to properly recognize the cycle.
Following this, the 2-bit opcode of appropriate instruction should
be issued. After the opcode bits, the 6-bit (or 7-bit) address
information should be issued. For certain instructions, some of the
bits of this field are dont care values (can be 0 or 1), but they
should still be issued. Following the address information, depend-
ing on the instruction (WRITE and WRALL), 16-Bit data (or 8-Bit)
is issued. Otherwise, depending on the instruction (READ), the
device starts to drive the output data on the DO line. Other
instructions perform certain control functions and do not deal with
data bits. The Microwire cycle ends when the CS signal is brought
low. However during certain instructions, falling edge of the CS
signal initiates an internal cycle (Programming), and the device
remains busy till the completion of the internal cycle. Each of the
7 instructions is explained in detail in the following sections.
1) Read (READ)
READ instruction allows data to be read from a selected location
in the memory array. Input information (Start bit, Opcode and
Address) for this instruction should be issued as listed under Table
1 or Table 2. Upon receiving a valid input information, decoding of
the opcode and the address is made, followed by data transfer
from the selected memory location into a 16-bit serial-out shift
register. This 16-bit data (or 8-bit data) is then shifted out on the
DO pin. MSB of the data (D15 or D8) is shifted out first and LSB
(DO) is shifted out last. A dummy-bit (logical 0) precedes this data
output string. Output data changes are initiated on the rising edge
of the SK clock. After reading the 16-bit (or 8-bit) data, the CS
signal can be brought low to end the Read cycle. Refer
Read cycle
diagram
.
2) Write Enable (WEN)
When VCC is applied to the part, it powers up in the Write Disable
(WDS) state. Therefore, all programming operations must be
preceded by a Write Enable (WEN) instruction. Once a Write
Enable instruction is executed, programming remains enabled
until a Write Disable (WDS) instruction is executed or VCC is
completely removed from the part. Input information (Start bit,
Opcode and Address) for this WEN instruction should be issued
as listed under Table 1 or Table 2. The device becomes write-
enabled at the end of this cycle when the CS signal is brought low.
Execution of a READ instruction is independent of WEN instruc-
tion. Refer
Write Enable cycle diagram.
3) Write (WRITE)
WRITE instruction allows write operation to a specified location in
the memory with a specified data. This instruction is valid only when
Device is write-enabled (Refer WEN instruction)
Input information (Start bit, Opcode, Address and Data) for this
WRITE instruction should be issued as listed under Table 1 or
Table 2. After inputting the last bit of data (D0 bit), CS signal must
be brought low before the next rising edge of the SK clock. This
falling edge of the CS initiates the self-timed programming cycle.
It takes tWP time (Refer appropriate DC and AC Electrical Charac-
teristics table) for the internal programming cycle to finish. During
this time, the device remains busy and is not ready for another
instruction.
The status of the internal programming cycle can be polled at any
time by bringing the CS signal high again, after tCS interval. When
CS signal is high, the DO pin indicates the READY/BUSY status
of the chip. DO = logical 0 indicates that the programming is still
in progress. DO = logical 1 indicates that the programming is
finished and the device is ready for another instruction. It is not
required to provide the SK clock during this status polling. While
the device is busy, it is recommended that no new instruction be
issued. Refer
Write cycle diagram.
It is also recommended to follow this instruction (after the device
becomes READY) with a Write Disable (WDS) instruction to
safeguard data against corruption due to spurious noise, inadvert-
ent writes etc.
4) Write All (WRALL)
Write all (WRALL) instruction is similar to the Write instruction
except that WRALL instruction will simultaneously program all
memory locations with the data pattern specified in the instruction.
This instruction is valid only when
Device is write-enabled (Refer WEN instruction)
Input information (Start bit, Opcode, Address and Data) for this
WRALL instruction should be issued as listed under Table 1 or
Table 2. After inputting the last bit of data (D0 bit), CS signal must
be brought low before the next rising edge of the SK clock. This
falling edge of the CS initiates the self-timed programming cycle.
It takes tWP time (Refer appropriate DC and AC Electrical Charac-
teristics table) for the internal programming cycle to finish. During
this time, the device remains busy and is not ready for another
instruction. Status of the internal programming can be polled as
described under WRITE instruction description. While the device
is busy, it is recommended that no new instruction be issued.
Refer
Write All cycle diagram.
Table 2. Instruction set (8-bit organization)
Instruction Start Bit Opcode Field Address Field Data Field
READ 1 10 A6 A5 A4 A3 A2 A1 A0
WEN 1 00 11XXXXX
WRITE 1 01 A6 A5 A4 A3 A2 A1 A0 D7-D0
WRALL 1 00 0 1 XXXXX D7-D0
WDS 1 00 00XXXXX
ERASE 1 11 A6 A5 A4 A3 A2 A1 A0
ERAL 1 00 1 0 XXXXX
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NM93C46A Rev. F
NM93C46A 1K-Bit Serial CMOS EEPROM
(MICROWIRETM Synchronous Bus)
5) Write Disable (WDS)
Write Disable (WDS) instruction disables all programming opera-
tions and should follow all programming operations. Executing
this instruction after a valid write instruction would protect against
accidental data disturb due to spurious noise, glitches, inadvert-
ent writes etc. Input information (Start bit, Opcode and Address)
for this WDS instruction should be issued as listed under Table 1
or Table 2. The device becomes write-disabled at the end of this
cycle when the CS signal is brought low.
Execution of a READ
instruction is independent of WDS instruction. Refer
Write Disable
cycle diagram.
6) Erase (ERASE)
The ERASE instruction will program all bits in the specified
location to logical 1 state. Input information (Start bit, Opcode
and Address) for this WDS instruction should be issued as listed
under Table 1 or Table 2. After inputting the last bit of data (A0 bit),
CS signal must be brought low before the next rising edge of the
SK clock. This falling edge of the CS initiates the self-timed
programming cycle. It takes tWP time (Refer appropriate DC and
AC Electrical Characteristics table) for the internal programming
cycle to finish. During this time, the device remains busy and is not
ready for another instruction. Status of the internal programming
can be polled as described under WRITE instruction description.
While the device is busy, it is recommended that no new instruc-
tion be issued. Refer
Erase cycle diagram.
7) Erase All (ERAL)
The Erase all instruction will program all locations to logical 1
state. Input information (Start bit, Opcode and Address) for this
WDS instruction should be issued as listed under Table 1 or Table
2. After inputting the last bit of data (A0 bit), CS signal must be
brought low before the next rising edge of the SK clock. This falling
edge of the CS initiates the self-timed programming cycle. It takes
tWP time (Refer appropriate DC and AC Electrical Characteristics
table) for the internal programming cycle to finish. During this time,
the device remains busy and is not ready for another instruction.
Status of the internal programming can be polled as described
under WRITE instruction description. While the device is busy, it
is recommended that no new instruction be issued. Refer
Erase
All cycle diagram.
Note:
The Fairchild CMOS EEPROMs do not require an ERASE or ERASE ALL
instruction prior to the WRITE or WRITE ALL instruction, respectively. The
ERASE and ERASE ALL instructions are included to maintain compatibility with
earlier technology EEPROMs.
Clearing of Ready/Busy status
When programming is in progress, the Data-Out pin will display
the programming status as either BUSY (low) or READY (high)
when CS is brought high (DO output will be tri-stated when CS is
low). To restate, during programming, the CS pin may be brought
high and low any number of times to view the programming status
without affecting the programming operation. Once programming
is completed (Output in READY state), the output is cleared
(returned to normal tri-state condition) by clocking in a Start Bit.
After the Start Bit is clocked in, the output will return to a tri-stated
condition. When clocked in, this Start Bit can be the first bit in a
command string, or CS can be brought low again to reset all
internal circuits. Refer
Clearing Ready Status
diagram.
Related Document
Application Note: AN758 - Using Fairchilds MICROWIRE EE-
PROM.
8www.fairchildsemi.com
NM93C46A Rev. F
NM93C46A 1K-Bit Serial CMOS EEPROM
(MICROWIRETM Synchronous Bus)
;
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tCSS
SYNCHRONOUS DATA TIMING
CS
SK
DI
DO (Data Read)
DO (Status Read) Valid Status
tDIS tDIH
tPD tDH
tSV
tSKH tSKL
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tCSH
tDF
tDF
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tPD
;
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Valid
Input Valid
Input
Valid
Output Valid
Output
tSKS
;
;
CS
SK
DI
DO High - Z
Dummy
Bit
1 1 0 A1 A0
0D1 D0
;;;;;;;;;;;;;;
;;;;;;;;;;;;;;
tCS
READ CYCLE (READ)
Address
Bits(6/7)
Start
Bit
Opcode
Bits(2)
93C46A (ORG=1;
An=A5; Dn=D15
):
Address bits pattern -> A5-A4-A3-A2-A1-A0; User defined
93C46A (ORG=0;
An=A6; Dn=D7
):
Address bits pattern -> A6-A5-A4-A3-A2-A1-A0; User defined
AnAn-1
Dn
Timing Diagrams
Address
Bits(6/7)
CS
SK
DI
DO High - Z
ERASE/WRITE ENABLE CYCLE (EWEN)
Start
Bit
Opcode
Bits(2)
1 0 0 A1 A0
tCS
AnAn-1
93C46A (ORG=1;
An=A5
):
Address bits pattern -> 1-1-x-x-x-x; (x -> Don't Care, can be 0 or 1)
93C46A (ORG=0;
An=A6
):
Address bits pattern -> 1-1-x-x-x-x-x; (x -> Don't Care, can be 0 or 1)
9www.fairchildsemi.com
NM93C46A Rev. F
NM93C46A 1K-Bit Serial CMOS EEPROM
(MICROWIRETM Synchronous Bus)
Timing Diagrams (Continued)
Address
Bits(6/7)
CS
SK
DI
DO High - Z
ERASE/WRITE DISABLE CYCLE (EWDS)
Start
Bit
Opcode
Bits(2)
100 A1 A0
t
CS
93C46A (ORG=1;
A
n
=A5
):
Address bits pattern -> 0-0-x-x-x-x; (x -> Don't Care, can be 0 or 1)
93C46A (ORG=0;
A
n
=A6
):
Address bits pattern -> 0-0-x-x-x-x-x; (x -> Don't Care, can be 0 or 1)
A
n
A
n-1
Address
Bits(6/7)
Data
Bits(16/8)
CS
SK
DI
DO High - Z
t
CS
WRITE CYCLE (WRITE)
Start
Bit
93C46A (ORG=1;
A
n
=A5; D
n
=D15
):
Address bits pattern -> A5-A4-A3-A2-A1-A0; User defined
Data bits pattern -> D15-to-D0; User defined
93C46A (ORG=0;
A
n
=A6; D
n
=D7
):
Address bits pattern -> A6-A5-A4-A3-A2-A1-A0; User defined
Data bits pattern -> D7-to-D0; User defined
Opcode
Bits(2)
1 0 1 A
n
A
n-1
A1 A0 D
n
D
n-1
D1 D0
Busy
Ready
t
WP
Address
Bits(6/7)
Data
Bits(16/8)
CS
SK
DI
DO High - Z
tCS
WRITE ALL CYCLE (WRALL)
Start
Bit
Opcode
Bits(2)
1 0 0 A1 A0 D1 D0
Busy
Ready
tWP
93C46A (ORG=1;
An=A5; Dn=D15
):
Address bits pattern -> 0-1-x-x-x-x; (x -> Don't Care, can be 0 or 1)
Data bits pattern -> D15-to-D0; User defined
93C46A (ORG=0;
An=A6; Dn=D7
):
Address bits pattern -> 0-1-x-x-x-x-x; (x -> Don't Care, can be 0 or 1)
Data bits pattern -> D7-to-D0; User defined
AnAn-1 DnDn-1
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NM93C46A Rev. F
NM93C46A 1K-Bit Serial CMOS EEPROM
(MICROWIRETM Synchronous Bus)
Timing Diagrams (Continued)
CS
SK
DI
DO High - Z High - Z
CLEARING READY STATUS
Start
Bit
Note: This Start bit can also be part of a next instruction. Hence the cycle
can be continued(instead of getting terminated, as shown) as if a new
instruction is being issued.
Busy
Ready
Address
Bits(6/7)
CS
SK
DI
DO High - Z
tCS
ERASE CYCLE (ERASE)
Start
Bit
Opcode
Bits(2)
111 A1 A0
Busy
Ready
tWP
A
n
A
n-1
93C46A (ORG=1;
A
n
=A5):
Address bits pattern -> A5-A4-A3-A2-A1-A0; User defined
93C46A (ORG=0;
A
n
=A6
):
Address bits pattern -> A6-A5-A4-A3-A2-A1-A0; User defined
Address
Bits(6/7)
CS
SK
DI
DO High - Z
t
CS
ERASE ALL CYCLE (ERAL)
Start
Bit
Opcode
Bits(2)
111 A1 A0
Busy
Ready
t
WP
93C46A (ORG=1;
A
n
=A5
):
Address bits pattern -> 1-0-x-x-x-x; (x -> Don't Care, can be 0 or 1)
93C46A (ORG=0;
A
n
=A6
):
Address bits pattern -> 1-0-x-x-x-x-x; (x -> Don't Care, can be 0 or 1)
A
n
A
n-1
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NM93C46A Rev. F
NM93C46A 1K-Bit Serial CMOS EEPROM
(MICROWIRETM Synchronous Bus)
Molded Package, Small Outline, 0.15 Wide, 8-Lead (M8)
Package Number M08A
Physical Dimensions inches (millimeters) unless otherwise noted
1234
8765
0.189 - 0.197
(4.800 - 5.004)
0.228 - 0.244
(5.791 - 6.198)
Lead #1
IDENT
Seating
Plane
0.004 - 0.010
(0.102 - 0.254)
0.014 - 0.020
(0.356 - 0.508)
0.014
(0.356)
Typ.
0.053 - 0.069
(1.346 - 1.753)
0.050
(1.270)
Typ
0.016 - 0.050
(0.406 - 1.270)
Typ. All Leads
8° Max, Typ.
All leads
0.150 - 0.157
(3.810 - 3.988)
0.0075 - 0.0098
(0.190 - 0.249)
Typ. All Leads
0.04
(0.102)
All lead tips
0.010 - 0.020
(0.254 - 0.508)
x 45°
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NM93C46A Rev. F
NM93C46A 1K-Bit Serial CMOS EEPROM
(MICROWIRETM Synchronous Bus)
8-Pin Molded TSSOP, JEDEC (MT8)
Package Number MTC08
Physical Dimensions inches (millimeters) unless otherwise noted
0.114 - 0.122
(2.90 - 3.10)
0.123 - 0.128
(3.13 - 3.30)
0.246 - 0.256
(6.25 - 6.5)
14
85
0.169 - 0.177
(4.30 - 4.50)
(7.72) Typ
(4.16) Typ
(1.78) Typ
(0.42) Typ
(0.65) Typ
0.002 - 0.006
(0.05 - 0.15)
0.0256 (0.65)
Typ.
0.0433
(1.1) Max
0.0075 - 0.0098
(0.19 - 0.30)
Pin #1 IDENT
0.0035 - 0.0079
0°-8°
0.020 - 0.028
(0.50 - 0.70)
0.0075 - 0.0098
(0.19 - 0.25)
Seating
plane
Gage
plane
See detail A
Notes: Unless otherwise specified
1. Reference JEDEC registration MO153. Variation AA. Dated 7/93
Land pattern recommendation
DETAIL A
Typ. Scale: 40X
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NM93C46A Rev. F
NM93C46A 1K-Bit Serial CMOS EEPROM
(MICROWIRETM Synchronous Bus)
Physical Dimensions inches (millimeters) unless otherwise noted
Molded Dual-In-Line Package (N)
Package Number N08E
0.373 - 0.400
(9.474 - 10.16)
0.092
(2.337)DIA
+
1234
8765
0.250 - 0.005
(6.35 ± 0.127)
87
0.032 ± 0.005
(0.813 ± 0.127)
Pin #1
Option 2
RAD
1
0.145 - 0.200
(3.683 - 5.080)
0.130 ± 0.005
(3.302 ± 0.127)
0.125 - 0.140
(3.175 - 3.556) 0.020
(0.508)
Min
0.018 ± 0.003
(0.457 ± 0.076)
90° ± 4°
Typ
0.100 ± 0.010
(2.540 ± 0.254)
0.040
(1.016) 0.039
(0.991)
Typ.
20° ± 1°
0.065
(1.651)
0.050
(1.270)
0.060
(1.524)
Pin #1 IDENT
Option 1
0.280 MIN
0.300 - 0.320
(7.62 - 8.128)
0.030
(0.762)MAX
0.125
(3.175)
DIA
NOM
0.009 - 0.015
(0.229 - 0.381)
0.045 ± 0.015
(1.143 ± 0.381)
0.325 +0.040
-0.015
8.255 +1.016
-0.381
95° ± 5°
0.090
(2.286)
(7.112)
IDENT
Fairchild does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and Fairchild reserves the right at any time without notice to change said circuitry and specifications.
Life Support Policy
Fairchild's products are not authorized for use as critical components in life support devices or systems without the express written
approval of the President of Fairchild Semiconductor Corporation. As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, and whose failure to perform, when properly
used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant
injury to the user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably ex-
pected to cause the failure of the life support device or system,
or to affect its safety or effectiveness.
Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor
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