VVZ 110 VVZ 175 IdAVM = 110/167 A VRRM = 1200-1600 V Three Phase Half Controlled Rectifier Bridge, B6HK VRSM VDSM VRRM VDRM V V 1300 1700 1200 1600 Type C ~ A 2 VVZ 110-12io7 3 1 E D C VVZ 175-12io7 VVZ 175-16io7 3 2 1 B Symbol Test Conditions IdAV IFRMS, ITRMS TC = 85C; module per leg IFSM, ITSM TVJ = 45C; VR = 0 I2t (di/dt)cr (dv/dt)cr 110 58 167 89 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1150 1230 1500 1600 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1000 1070 1350 1450 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 6600 6280 11200 10750 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 5000 4750 9100 8830 A2s A2s 150 A/s 500 A/s 1000 V/s 10 V 10 5 1 0.5 W W W W -40...+125 125 -40...+125 C C C 2500 3000 V~ V~ 515 % 515 % 300 Nm Nm g TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) PGAVM TVJ TVJM Tstg 50/60 Hz, RMS t = 1 min IISOL 1 mA t=1s Md Mounting torque (M6) Terminal connection torque (M6) typ. Weight Input rectifier for PWM converter Input rectifier for switch mode power supplies (SMPS) Softstart capacitor charging Advantages tp = 30 s tp = 500 s tp = 10 ms Package with screw terminals Isolation voltage 3000 V~ Planar passivated chips UL registered E72873 Applications VISOL B - Features TVJ = TVJM repetitive, IT = 50 A f =400 Hz, tP =200 s VD = 2/3 VDRM IG = 0.3 A, non repetitive, diG/dt = 0.3 A/s, IT = 1/3 * IdAV TVJ = TVJM IT = ITAVM A + Maximum Ratings VVZ 110 VVZ 175 VRGM PGM E ~ D ~ Easy to mount with two screws Space and weight savings Improved temperature and power cycling Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2020 IXYS All rights reserved 20200117c 1-3 VVZ 110 VVZ 175 Symbol Test Conditions Characteristic Values VVZ 110 VVZ 175 IR, ID VR = VRRM; VD = VDRM VF, VT IF, IT = 200 A, TVJ = 25C VT0 rT For power-loss calculations only (TVJ = 125C) VGT VD = 6 V; IGT VD = 6 V; VGD IGD TVJ = TVJM; TVJ = TVJM; IL IG = 0.3 A; tG = 30 s diG/dt = 0.3 A/s IH TVJ = TVJM TVJ = 25C 5 0.3 mA mA 1.75 1.57 V 0.85 6 0.85 3.5 V m TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C 1.5 1.6 100 200 V V mA mA VD = 2/3 VDRM VD = 2/3 VDRM 0.2 5 V mA 450 mA TVJ = 25C; VD = 6 V; RGK = 200 mA tgd TVJ = 25C; VD = 1/2 VDRM IG = 0.3 A; diG/dt = 0.3 A/s 2 s RthJC per thyristor (diode); DC current per module per thyristor (diode); DC current per module RthJH dS dA a TVJ = 25C 0.65 0.108 0.8 0.133 Creeping distance on surface Creepage distance in air Max. allowable acceleration 0.46 0.077 0.55 0.092 K/W K/W K/W K/W 10 9.4 50 mm mm m/s2 M6x12 3 30 7 Dimensions in mm (1 mm = 0.0394") 94 80 72 26 D ~ E ~ B - A + 3 4 2 5 1 6 12 2.8 x 0.8 6 5 5 54 27 6.5 C ~ 6.5 15 26 7 25 66 M6 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2020 IXYS All rights reserved 20200117c 2-3 VVZ 110 VVZ 175 10 120 1: IGT, TVJ = 125C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C V A 100 VG IdAV 80 2 3 6 1 60 5 1 4 40 20 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W IGD, TVJ = 125C 0 0.1 1 10 100 1000 IG 0 mA 50 100 150 C TC Fig. 2 Fig. 1 Gate trigger characteristics DC output current at case temperature 0.7 900 A 50 Hz 80% VRRM 800 IFSM K/W 0.6 ZthJC 700 0.5 TVJ = 45C 600 0.4 500 0.3 400 TVJ = 125C 0.2 300 0.1 200 100 10-3 Fig. 3 10-2 10-1 100 t s Surge overload current IFSM: Crest value, t: duration IXYS reserves the right to change limits, test conditions and dimensions. (c) 2020 IXYS All rights reserved 101 0.0 10-3 10-2 10-1 100 s 101 t Fig. 4 Transient thermal impedance junction to case (per leg) 20200117c 3-3