Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 9
1Publication Order Number:
PZTA42T1/D
PZTA42T1G,
SPZTA42T1G
High Voltage Transistor
Surface Mount
NPN Silicon
Features
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Symbol Value Unit
Collector-Emitter Voltage
(Open Base)
VCEO 300
Vdc
Collector-Base Voltage
(Open Emitter)
VCBO 300
Vdc
Emitter-Base Voltage
(Open Collector)
VEBO 6.0
Vdc
Collector Current (DC) IC500 mAdc
Total Power Dissipation
@ TA = 25C (Note 1)
PD1.5
W
Storage Temperature Range Tstg −65 to 150 C
Junction Temperature TJ150 C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient (Note 1)
RqJA 83.3
C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board
1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
COLLECTOR 2, 4
BASE
1
EMITTER 3
SOT−223 PACKAGE
NPN SILICON
HIGH VOLTAGE TRANSISTOR
SURFACE MOUNT
1
AYW
P1D G
G
P1D = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
G= Pb−Free Package
(Note: Microdot may be in either location)
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device Package Shipping†
ORDERING INFORMATION
PZTA42T1G SOT−223
(Pb−Free)
1,000 / Tape & Reel
SPZTA42T1G SOT−223
(Pb−Free)
1,000 / Tape & Reel
PZTA42T1G, SPZTA42T1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristics Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 2)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO 300 −
Vdc
Collector-Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO 300 −
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO 6.0 −
Vdc
Collector-Base Cutoff Current
(VCB = 200 Vdc, IE = 0)
ICBO
−0.1
mAdc
Emitter-Base Cutoff Current
(VBE = 6.0 Vdc, IC = 0)
IEBO
−0.1
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 30 mAdc, VCE = 10 Vdc)
hFE 25
40
40
−
−
−
−
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT50 −
MHz
Feedback Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Cre
−3.0
pF
Collector-Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
VCE(sat)
−0.5
Vdc
Base-Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
VBE(sat)
−0.9
Vdc
2. Pulse Test Conditions, tp = 300 ms, d 0.02.
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
120
0.1 1.0 10
100
80
60
0
hFE, DC CURRENT GAIN
TJ = +125C
25C
-55C
VCE = 10 Vdc
100
20
40
PZTA42T1G, SPZTA42T1G
http://onsemi.com
3
C, CAPACITANCE (pF)
VR, REVERSE VOLTAGE (V)
0.1
100
0.1
10
1.0 10 1000
Ceb @ 1MHz
Figure 2. Capacitance
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (V)
1.4
0.0
1.2
1.0
0.8
0.6
0.4
0.2
100100.1 1.0
100
1.0 Ccb @ 1MHz
VBE(on) @ 25C, VCE = 10 V
VCE(sat) @ 25C, IC/IB = 10
VBE(sat) @ 25C, IC/IB = 10
VCE(sat) @ 125C, IC/IB = 10
VCE(sat) @ -55C, IC/IB = 10
VBE(sat) @ 125C, IC/IB = 10
VBE(sat) @ -55C, IC/IB = 10
VBE(on) @ 125C, VCE = 10 V
VBE(on) @ -55C, VCE = 10 V
Figure 3. “ON” Voltages
Figure 4. Current Gain Bandwidth Product Figure 5. Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (V)
1000101
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
10 ms
1.0 s
1
100
IC, COLLECTOR CURRENT (mA)
f , CURRENT−GAIN — BANDWIDTH (MHz)
T
10010.1
10
100
10
PZTA42T1G, SPZTA42T1G
http://onsemi.com
4
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.5
0.059 ǒmm
inchesǓ
SCALE 6:1
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
A1
b1
D
E
b
e
e1
4
123
0.08 (0003)
A
L1
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.50 1.63 1.75 0.060
INCHES
A1 0.02 0.06 0.10 0.001
b0.60 0.75 0.89 0.024
b1 2.90 3.06 3.20 0.115
c0.24 0.29 0.35 0.009
D6.30 6.50 6.70 0.249
E3.30 3.50 3.70 0.130
e2.20 2.30 2.40 0.087
0.85 0.94 1.05 0.033
0.064 0.068
0.002 0.004
0.030 0.035
0.121 0.126
0.012 0.014
0.256 0.263
0.138 0.145
0.091 0.094
0.037 0.041
NOM MAX
L1 1.50 1.75 2.00 0.060
6.70 7.00 7.30 0.264
0.069 0.078
0.276 0.287
HE
− −
e1
010010
q
q
L
L0.20 −−− −−− 0.008 −−− −−−
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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Phone: 81−3−5817−1050
PZTA42T1/D
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