PD - 97057A IRF2804S-7PPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET(R) Power MOSFET D VDSS = 40V G RDS(on) = 1.6m Description This HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. S ID = 160A S (Pin 2, 3 ,5,6,7) G (Pin 1) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 320 A ID @ TC = 100C Continuous Drain Current, VGS @ 10V (See Fig. 9) 230 ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Package Limited) 160 IDM Pulsed Drain Current 1360 PD @TC = 25C Maximum Power Dissipation 330 W VGS Linear Derating Factor Gate-to-Source Voltage 2.2 20 W/C V EAS Single Pulse Avalanche Energy (Thermally Limited) 630 mJ c EAS (tested) Single Pulse Avalanche Energy Tested Value IAR Avalanche Current c EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range h d 1050 See Fig.12a,12b,15,16 g A mJ C -55 to + 175 Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 10 lbf*in (1.1N*m) Thermal Resistance Typ. Max. Units --- 0.50 C/W RCS Case-to-Sink, Flat, Greased Surface 0.50 --- RJA Junction-to-Ambient --- 62 RJA Junction-to-Ambient (PCB Mount, steady state) --- 40 RJC Junction-to-Case j Parameter j ij HEXFET(R) is a registered trademark of International Rectifier. www.irf.com 1 07/22/10 IRF2804S-7PPbF Static @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS Min. Typ. Max. Units 40 --- --- VDSS/TJ Breakdown Voltage Temp. Coefficient --- 0.028 --- V/C Reference to 25C, ID = 1mA RDS(on) SMD Static Drain-to-Source On-Resistance --- 1.2 1.6 m VGS = 10V, ID = 160A VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V VDS = VGS, ID = 250A gfs Forward Transconductance 220 --- --- S VDS = 10V, ID = 160A IDSS Drain-to-Source Leakage Current --- --- 20 A VDS = 40V, VGS = 0V --- --- 250 --- --- 200 nA VGS = 20V nC ID = 160A IGSS Gate-to-Source Forward Leakage V Conditions Drain-to-Source Breakdown Voltage VGS = 0V, ID = 250A e VDS = 40V, VGS = 0V, TJ = 125C Gate-to-Source Reverse Leakage --- --- -200 Qg Total Gate Charge --- 170 260 VGS = -20V Qgs Gate-to-Source Charge --- 63 --- Qgd Gate-to-Drain ("Miller") Charge --- 71 --- td(on) Turn-On Delay Time --- 17 --- tr Rise Time --- 150 --- ID = 160A td(off) Turn-Off Delay Time --- 110 --- RG = 2.6 tf Fall Time --- 105 --- VGS = 10V LD Internal Drain Inductance --- 4.5 --- VDS = 32V VGS = 10V ns nH VDD = 20V e d Between lead, D 6mm (0.25in.) from package G LS Internal Source Inductance --- 7.5 --- Ciss Input Capacitance --- 6930 --- Coss Output Capacitance --- 1750 --- Crss Reverse Transfer Capacitance --- 970 --- = 1.0MHz, See Fig. 5 Coss Output Capacitance --- 5740 --- VGS = 0V, VDS = 1.0V, = 1.0MHz Coss Output Capacitance --- 1570 --- VGS = 0V, VDS = 32V, = 1.0MHz Coss eff. Effective Output Capacitance --- 2340 --- VGS = 0V, VDS = 0V to 32V pF and center of die contact VGS = 0V S VDS = 25V Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current --- --- 320 ISM (Body Diode) Pulsed Source Current --- --- 1360 c A (Body Diode) VSD Diode Forward Voltage --- --- 1.3 V trr Reverse Recovery Time Qrr Reverse Recovery Charge --- --- 43 48 65 72 ns nC Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25C, L=0.049mH, RG = 25, IAS = 160A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 2 Conditions MOSFET symbol D showing the integral reverse G S p-n junction diode. TJ = 25C, IS = 160A, VGS = 0V TJ = 25C, IF = 160A, VDD = 20V di/dt = 100A/s e e Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. 100% tested to this value in production. This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ of approximately 90C. www.irf.com IRF2804S-7PPbF 10000 10000 1000 BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 100 4.5V 1000 BOTTOM 100 4.5V 60s PULSE WIDTH Tj = 25C 60s PULSE WIDTH Tj = 175C 10 10 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 240 Gfs, Forward Transconductance (S) 1000.0 ID, Drain-to-Source Current() VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100.0 TJ = 175C 10.0 TJ = 25C 1.0 VDS = 20V 60s PULSE WIDTH 0.1 2.0 3.0 4.0 5.0 6.0 7.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 8.0 TJ = 25C 200 160 TJ = 175C 120 80 40 VDS = 10V 380s PULSE WIDTH 0 0 20 40 60 80 100 120 140 ID, Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance vs. Drain Current 3 IRF2804S-7PPbF 14000 VGS, Gate-to-Source Voltage (V) 12000 C, Capacitance (pF) 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10000 8000 Ciss 6000 4000 Coss 2000 Crss ID= 160A 16 12 8 4 0 0 1 10 0 100 100 150 1000.0 10000 ID, Drain-to-Source Current (A) TJ = 175C 100.0 10.0 TJ = 25C 1.0 0.8 1.2 1.6 300 1000 100sec 100 10 1 1msec Tc = 25C Tj = 175C Single Pulse 10msec DC 0.1 0.1 0.4 250 OPERATION IN THIS AREA LIMITED BY R DS (on) VGS = 0V 0.0 200 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage ISD , Reverse Drain Current (A) 50 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 2.0 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS = 32V VDS= 20V 2.4 0 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF2804S-7PPbF 350 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 LIMITED BY PACKAGE ID , Drain Current (A) 300 250 200 150 100 50 0 25 50 75 100 125 150 ID = 160A VGS = 10V 1.5 1.0 0.5 175 -60 -40 -20 TC , Case Temperature (C) 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig 10. Normalized On-Resistance vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature 1 Thermal Response ( ZthJC ) D = 0.50 0.1 0.20 0.10 0.05 J 0.02 0.01 0.01 R1 R1 J 1 R2 R2 C 2 1 2 Ri (C/W) i (sec) 0.1951 0.000743 0.3050 0.008219 Ci= i/Ri Ci i/Ri 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 15V DRIVER L VDS D.U.T RG VGS 20V + V - DD IAS tp A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS EAS, Single Pulse Avalanche Energy (mJ) IRF2804S-7PPbF 2500 I D 21A 33A BOTTOM 160A TOP 2000 1500 1000 500 0 tp 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (C) Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD 4.5 VGS(th) Gate threshold Voltage (V) VG Charge Fig 13a. Basic Gate Charge Waveform L DUT 0 1K Fig 13b. Gate Charge Test Circuit 6 VCC 4.0 3.5 3.0 2.5 2.0 ID = 1.0A ID = 1.0mA ID = 250A 1.5 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( C ) Fig 14. Threshold Voltage vs. Temperature www.irf.com IRF2804S-7PPbF 10000 Duty Cycle = Single Pulse Avalanche Current (A) 1000 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 100 0.05 0.10 10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 800 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 160A 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (C) Fig 16. Maximum Avalanche Energy vs. Temperature www.irf.com Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f 175 ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav 7 IRF2804S-7PPbF D.U.T Driver Gate Drive + * * * * D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period * RG D= VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - - Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V DS VGS RG RD D.U.T. + -VDD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com IRF2804S-7PPbF D2Pak - 7 Pin Package Outline Dimensions are shown in millimeters (inches) D2Pak - 7 Pin Part Marking Information 14 Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/ auirf2804s-7p.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 IRF2804S-7PPbF D2Pak - 7 Pin Tape and Reel IRF2804STRL-7P IRF2804STRL-7P IRF2804STRL-7P Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/2010 10 www.irf.com