VS-16CDU06-M3
www.vishay.com Vishay Semiconductors
Revision: 12-Nov-2018 1Document Number: 95814
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Ultrafast Rectifier, 2 x 8 A FRED Pt®
FEATURES
• Ultrafast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction temperature
• For PFC CRM, snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art ultrafast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop, ultrafast recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in PFC, boost, in the
AC/DC section of SMPS, freewheeling and clamp diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element and snubbers.
PRIMARY CHARACTERISTICS
IF(AV) 2 x 8 A
VR600 V
VF at IF0.94 V
trr 45 ns
TJ max. 175 °C
Package SMPD (TO-263AC)
Circuit configuration Dual serial
Top View Bottom View
SMPD (TO-263AC)
eSMP® Series
K
1
2
K
Cathode Anode 2
Anode 1
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage VRRM 600 V
Average rectified forward current per device IF(AV) Tsolder pad = 149 °C 16
A
per diode 8
Non-repetitive peak surge current per device IFSM TJ = 25 °C, 6 ms square pulse 200
per diode 105
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
VBR,
VRIR = 100 μA 600 - -
V
Forward voltage, per diode VF
IF = 8 A - 1.1 1.4
IF = 8 A, TJ = 150 °C - 0.94 1.15
Reverse leakage current, per diode IR
VR = VR rated - - 5 μA
TJ = 150 °C, VR = VR rated - 20 150
Junction capacitance, per diode CTVR = 600 V - 8 - pF