Mar 2004 Version :0.0 Page 1 of 1
BC846 Silicon NPN Epitaxial Transistor
Description :The BC846is designed for audio frequency general amplifier applications
Features: ●Excellent hFE Linearity
●Complementary to BC856
Chip Appearance
Chip Size 350um×350um
Chip Thickness 210±20um
Base 110um×110um
Bonding Pad Size
Emitter 100um×100um
Front Metal Al
Backside Metal Au(As)
Scribe line width 40um
Wafer Size 6 inch
Electrical Characteristics( Ta=25℃)
Characteristic Symbol Test Condition Min Max Unit
Collector Cutoff Current ICBO V
CB=30V, IE=0 15 nA
Emitter Cutoff Current IEBO V
EB=5V, IC=0 0.1 uA
Collector-Base Breakdown Voltage BVCBO I
C=0.1mA, 80
V
Collector-Emitter Breakdown Voltage BVCEO I
C=1mA, 65
V
Emitter-Base Breakdown Voltage BVEBO I
E=0.1mA, 5.0
V
DC Current Gain hFE V
CE=5V, IC=2mA 150 600
Collector Saturation Voltage VCE(sat) IC=10mA,IB=0. 5mA 0.25 V
BC846
