ADVANCE TECHNICAL INFORMATION IXTC 75N10 MegaMOSTMFET VDSS = 100 V = 72 A ID25 RDS(on) = 20 m N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 100 V VDGR TJ = 25C to 150C; RGS = 1 M 100 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 72 A IDM TC = 25C, pulse width limited by TJM 300 A PD TC = 25C 230 W ISOPLUS220TM G -55 ... +150 C Features 150 C z Tstg -55 ... +150 C z Md Mounting torque 1.13/10 Nm/lb.in. Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 2 g 300 C S G = Gate S = Source TJM TJ D z z z Isolated back surface* D = Drain International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Applications z z z z Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. VDSS V GS = 0 V, ID = 250 A 100 VGS(th) V DS = VGS, ID = 250 A 2 IGSS V GS = 20 VDC, VDS = 0 IDSS V DS = 0.8 * VDSS VGS = 0 V RDS(on) 4 z z V z nA TJ = 25C TJ = 125C 200 1 A mA V GS = 10 V, ID = IT Pulse test, t 300 s, duty cycle d 2 % 0.020 (c) 2003 IXYS All rights reserved Advantages V 100 Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density See IXTH75N10 data sheet for characteristic curves DS98881A(7/03) IXTC 75N10 Symbol Test Conditions gfs V DS = 10 V; ID = IT, pulse test Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 25 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 30 S 4500 pF 1300 pF Crss 550 pF td(on) 40 60 ns 60 110 ns 100 140 ns tr VGS = 10 V, VDS = 0.5 * VDSS, ID = IT td(off) RG = 2 , (External) tf 30 Qg(on) Qgs VGS = 10 V, VDS = 0.5 * VDSS, ID = IT Qgd 60 ns 180 260 nC 30 70 nC 90 160 nC 0.54 K/W RthJC RthCK 0.30 Source-Drain Diode Symbol Test Conditions IS V GS = 0 V ISM ISOPLUS220 Outline K/W Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 75 A Repetitive; pulse width limited by TJM 300 A VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % 1.75 V t rr IF = IS, -di/dt = 100 A/s, VR = 100 V 300 ns Note: 1. IT = 37.5A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343