© 2003 IXYS All rights reserved DS98881A(7/03)
ADVANCE TECHNICAL INFORMATION
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 100 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ100 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C72A
IDM TC= 25°C, pulse width limited by TJM 300 A
PDTC= 25°C 230 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight 2g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
MegaMOSTMFET
N-Channel Enhancement Mode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 250 µA 100 V
VGS(th) VDS = VGS, ID = 250 µA24V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = 0.8 • VDSS TJ = 25°C 200 µA
VGS = 0 V TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = IT
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 0.020 Ω
Features
zInternational standard packages
zLow RDS (on) HDMOSTM process
zRugged polysilicon gate cell structure
zLow package inductance (< 5 nH)
- easy to drive and to protect
zFast switching times
Applications
zSwitch-mode and resonant-mode
power supplies
zMotor controls
zUninterruptible Power Supplies (UPS)
zDC choppers
Advantages
zEasy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
zSpace savings
zHigh power density
IXTC 75N10 VDSS = 100 V
ID25 = 72 A
RDS(on) = 20 mΩΩ
ΩΩ
Ω
G = Gate D = Drain
S = Source
G
DS
ISOPLUS220TM
Isolated back surface*
See IXTH75N10 data sheet for
characteristic curves
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXTC 75N10
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = IT, pulse test 25 30 S
Ciss 4500 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1300 pF
Crss 550 pF
td(on) 40 60 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = IT60 110 ns
td(off) RG = 2 Ω, (External) 100 140 ns
tf30 60 ns
Qg(on) 180 260 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT30 70 nC
Qgd 90 160 nC
RthJC 0.54 K/W
RthCK 0.30 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 75 A
ISM Repetitive; pulse width limited by TJM 300 A
VSD IF = IS, VGS = 0 V, 1.75 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = IS, -di/dt = 100 A/µs, VR = 100 V 300 ns
Note: 1. IT = 37.5A
ISOPLUS220 Outline
