KE C SEMICONDUCTOR KTC945 KOREA ELECTRONICS CO.,LTD. TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES B c * Excellent hpg: Linearity > her (c=0.1lmA)/hrr(c=2mA)=0.95(Typ.) * Low Noise : NF=1dB(Typ.) at f=1kHz. < * Complementary to KTA733 | I t N DIM MILLIMETERS K AK i) A 4.70 MAX Hl G B 4.80 MAX MAXIMUM RATINGS (Ta=25'C) > . <__ 37 | E 1.00 CHARACTERISTIC SYMBOL] RATING| UNIT : F 127 H G 0.85 Collector-Base Voltage Vego 60 Vv el : z001080 F F K 0.55 MAX Collector-Emitter Voltage Vcro 50 Vv - PERT Ba N 1.00 Emitter-Base Voltage Veo 5 Vv x 1. EMITTER Collector Current Ic 150 mA . on Collector Power Dissipation Pe 625 mW TO-9e2 Junction Temperature T; 150 Cc Storage Temperature Range Tstg -5d~ 150 Cc ELECTRICAL CHARACTERISTICS (Ta=25T) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector-Base _ _ _ _ Breakdown Voltage Vasrycso Tc100HA, Iu=0 60 Vv Collector-Emitter _ _ - _ _ Breakdown Voltage Vasrocuo Ic=ImA, 15-0 50 Vv Emitter-Base _ _ - _ _ Breakdown Voltage Vasrorso Te=100HA, Ic=0 Vv Collector Cut-off Current Icno Vcn=60V, In=0 - - 0.1 LA Emitter Cut-off Current Teo Vip=oV, Ic=0 - - 0.1 BA DC Current Gain hee Vcr=6V, Ic=2mA 90 - 600 (Note) Collector-Emitter Vertu Ic=100mA, In=10mA - 0.1 0.25 Vv Saturation Voltage Base-Emitter 2 _ _ _ Saturation Voltage VBR teat) I-=100mA, In=lOmA 1.0 Vv Transition Frequency fr Vcr=l0V, Ic=l0mA 80 300 - MHz Collector Output Capacitance Cop Vcn=l0V, In=0, f=1MHz - 2.0 3.5 pF . : Vcr=6V, Ic=0.1lmA, _ Noise Figure NF Re=10kQ, f=1kHz 1.0 10 dB Note ! hr Classification R:90~180, Q:185~270, P:200~400, K:300~600 1999. 12. 22 Revision No : 1 KEC Val