UTC 2SA1015 PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-004,B
LOW FREQUENCY PNP
AMPLIFIER TRANSISTOR
FEATURES
*Collector-Emitter Voltage:
BVCEO=-50V
*Collector current up to 150mA
*High hFE linearity
*Complement to 2SC1815
TO-92
1
1:EMITTER 2:COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER SYMBOL RATING UNIT
Collector-base voltage VCBO -50 V
Collector-emitter voltage VCEO -50 V
Emitter-base voltage VEBO -5 V
Collector dissipation Pc 400 mW
Collector current Ic -150 mA
Base current IB -50 mA
Junction Temperature Tj 125 °C
Storage Temperature TSTG -65 ~ +150 °C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-base breakdown voltage BVCBO Ic=-100µA,IE=0 -50 V
Collector-emitter breakdown voltage BVCEO Ic=-10mA,IB=0 -50 V
Emitter-base breakdown voltage BVEBO I
E=-10µA,Ic=0 -5 V
Collector cut-off current ICBO V
CB=-50V,IE=0 -100 nA
Emitter cut-off current IEBO V
EB=-5V,Ic=0 -100 nA
DC current gain(note) hFE1
hFE2
VCE=-6V,Ic=-2mA
VCE=-6V,Ic=-150mA
120
25
700
Collector-emitter saturation voltage VCE(sat) Ic=-100mA,IB=-10mA -0.1 -0.3 V
Base-emitter saturation voltage VBE(sat) Ic=-100mA,IB=-10mA -1.1 V
Current gain bandwidth product fT V
CE=-10V,Ic=-1mA 80 MHz
Output capacitance Cob VCB=-10V,IE=0,f=1MHz 4.0 7.0 pF
Noise Figure NF Ic=-0.1mA,VCE=-6V
RG=1kΩ,f=100Hz
0.5 6 dB