2011-10-051
BDP948_BDP950_BDP954
1
2
3
4
PNP Silicon AF Power Transistors
• For AF driver and output stages
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary types: BDP947, BDP949
BDP953 (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type Marking Pin Configuration Package
BDP948
BDP950
BDP954
BDP948
BDP950
BCP954
1=B
1=B
1=B
2=C
2=C
2=C
3=E
3=E
3=E
4=C
4=C
4=C
-
-
-
-
-
-
SOT223
SOT223
SOT223
2011-10-052
BDP948_BDP950_BDP954
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
BDP948
BDP950
BDP954
VCEO
45
60
100
V
Collector-base voltage
BDP948
BDP950
BDP954
VCBO
45
60
120
Emitter-base voltage VEBO 5
Collector current IC3 A
Peak collector current, tp ≤ 10 ms ICM 5
Base current IB200 mA
Peak base current IBM 500
Total power dissipation-
TS ≤ 100 °C
Ptot 5 W
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 10 K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2011-10-053
BDP948_BDP950_BDP954
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BDP948
IC = 10 mA, IB = 0 , BDP950
IC = 10 mA, IB = 0 , BDP954
V(BR)CEO
45
60
100
-
-
-
-
-
-
V
Collector-base breakdown voltage
IC = 100 µA, IE = 0 , BDP948
IC = 100 µA, IE = 0 , BDP950
IC = 100 µA, IE = 0 , BDP954
V(BR)CBO
45
60
120
-
-
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5 - -
Collector-base cutoff current
VCB = 45 V, IE = 0
VCB = 45 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
20
µA
Emitter-base cutoff current
VEB = 4 V, IC = 0
IEBO - - 100 nA
DC current gain1)
IC = 10 mA, VCE = 5 V
IC = 500 mA, VCE = 1 V
IC = 1 A, VCE = 2 V BDP948,BDP950
BDP954
IC = 1 A, VCE = 2 V
hFE
25
85
50
15
-
-
-
-
-
475
-
-
-
Collector-emitter saturation voltage1)
IC = 2 A, IB = 0.2 A
VCEsat - - 0.5 V
Base emitter saturation voltage1)
IC = 2 A, IB = 0.2 A
VBEsat - - 1.3
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz
fT- 100 - MHz
Collector-base capacitance
VCB = 10 V, f = 100 MHz
Ccb - 40 - pF
1Pulse test: t < 300µs; D < 2%
2011-10-054
BDP948_BDP950_BDP954
DC current gain hFE = ƒ(IC)
VCE = 2 V
10 0 10 1 10 2 10 3 10 4
mA
IC
1
10
2
10
3
10
-
hFE
100 °C
25 °C
-50 °C
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
0 0.1 0.2 0.3 0.4 V0.6
VCEsat
0
10
1
10
2
10
3
10
4
10
mA
IC
100°C
25°C
-50°C
Base-emitter saturation voltage
IC = (VBEsat), hFE = 10
0 0.2 0.4 0.6 0.8 1 V1.3
VBEsat
0
10
1
10
2
10
3
10
4
10
mA
IC
-50°C
25°C
100°C
Collector current IC = ƒ(VBE)
VCE = 2 V
0 0.2 0.4 0.6 0.8 1 V1.3
VBE
0
10
1
10
2
10
3
10
4
10
mA
IC
-50°C
25°C
100°C
2011-10-055
BDP948_BDP950_BDP954
Collector cutoff current ICBO = ƒ(TA)
VCB = 45 V
0 20 40 60 80 100 120 °C 150
TA
-1
10
0
10
1
10
2
10
3
10
4
10
5
10
nA
ICB0
max
typ
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 4 8 12 16 V22
VCB(VEB
0
50
100
150
200
250
300
350
pF
425
CCB(CEB)
CCB
CEB
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
ts
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
W
5.5
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
RthJS
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
2011-10-056
BDP948_BDP950_BDP954
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
2011-10-057
BDP948_BDP950_BDP954
Package SOT223
Package Outline
Foot Print
Marking Layout (Example)
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
2005, 24 CW
Date code (YYWW)
BCP52-16
Type code
Pin 1
123
3
4
±0.1
±0.04
0.5 MIN.
0.28
0.1 MAX.
15˚ MAX.
6.5±0.2
A
4.6
2.3
0.7 ±0.1
0.25 MA
1.6±0.1
7
±0.3
B0.25 M
±0.2
3.5
B
3.5
1.4 4.8 1.4
1.11.2
80.3 MAX.
6.8
7.55
12
1.75
Pin 1
Manufacturer
0...10˚
2011-10-058
BDP948_BDP950_BDP954
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
