Original Creation Date: 01/08/04
Last Update Date: 02/24/04
Last Major Revision Date: 02/20/04
MNLMH6722-X REV 1A0 MICROCIRCUIT DATA SHEET
Quad, Current Feedback, Wideband Video OP AMP
General Description
The LMH6722 series combine National's VIP10 (TM) high speed complementary bipolar process
with National's current feedback topology to produce a very high speed op amp. These
amplifiers provide a 400MHz small signal bandwidth at a gain of +2V/V and a 1800V/uS slew
rate while consuming only 5.6mA from +5V supplies.
The LMH6722 series offer exceptional video performance with its 0.01% and 0.01deg
differential gain and phase errors for NTSC and PAL video signals while driving a back
terminated 75 Ohm load. They also offer a flat gain response of 0.1dB to 120MHz.
Additionally, they can deliver 70mA continuous output current. This level of performance
makes them an ideal op amp for broadcast quality video systems.
NS Part Numbers
LMH6722J-QML
LMH6722WG-QML
Industry Part Number
LMH6722
Prime Die
LMH6722
Controlling Document
SEE FEATURES SECTION
Processing
MIL-STD-883, Method 5004
Quality Conformance Inspection
MIL-STD-883, Method 5005
Subgrp Description Temp ( C)
o
1 Static tests at +25
2 Static tests at +125
3 Static tests at -55
4 Dynamic tests at +25
5 Dynamic tests at +125
6 Dynamic tests at -55
7 Functional tests at +25
8A Functional tests at +125
8B Functional tests at -55
9 Switching tests at +25
10 Switching tests at +125
11 Switching tests at -55
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MICROCIRCUIT DATA SHEET
MNLMH6722-X REV 1A0
Features
- 400MHz (Av = +2V/V, Vout = 500mVpp) -3dB Bw
- 250MHz (Av = +2V/V, Vout = 2Vpp) -3dB Bw
- 0.1dB gain flatness to 120MHz
- Low power: 5.6mA per Op Amp
- -58dbc HD2/ -70dbc HD3 at 20MHz
- Fast slew rate: 1800V/uS
- Unity gain stable
- Improved replacement for CLC415 (LMH6722)
CONTROLLING DOCUMENTS:
LMH6722J-QML 5962-0324901QCA
LMH6722WG-QML 5962-0324901QZA
Applications
- HDTV, NTSC & PAL video systems
- Wideband active filters
- Cable drivers
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MICROCIRCUIT DATA SHEET
MNLMH6722-X REV 1A0
(Absolute Maximum Ratings)
(Note 1)
Supply voltage (Vs) +6.75Vdc
Common mode input voltage (Vcm) V- to V+
Differential input voltage (Vid) 2.2V
Maximum Power dissipation (Pd)
(Note 2) 1W
Lead temperature (soldering, 10 seconds) +300 C
Junction temperature (Tj) +175 C
Storage temperature range -65 C < Ta < +150 C
Thermal Resistance
(ThetaJA) Junction -to-ambient 130 C/WCERAMIC DIP (Still Air) 83 C/W (500LF/Min Air Flow) 165 C/WCERAMIC SOIC (Still Air) 110 C/W (500LF/Min Air Flow)
(ThetaJC) Junction-to-case 24 C/WCERAMIC DIP 26 C/WCERAMIC SOIC
Package Weight
(typical) 2190 mgCERAMIC DIP 410 mgCERAMIC SOIC
ESD Tolerance
(Note 3) 4000V
Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur.
Operating Ratings are conditions for which the device is functional, but do not
guarantee specific performance limits. For guaranteed specifications apply only for
the test conditions listed. Some performance characteristics may degrade when the
device is not operated under the listed test conditions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is
dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to
ambient thermal resistance), and TA (ambient temperature). The maximum allowable
power dissipation at any temperature is Pdmax = (Tjmax - TA) / ThetaJA or the number
given in the Absolute Maximum Ratings, whichever is lower.
Note 3: Human body model, 100pF discharged through 1.5K Ohms.
3
MICROCIRCUIT DATA SHEET
MNLMH6722-X REV 1A0
Recommended Operating Conditions
Supply voltage (Vs) +5 Vdc
Ambient Operating Temperature Range (Ta) -55C to +125C
4
MNLMH6722-X REV 1A0 MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: Rl = 100 Ohms, Vs = +5 V dc, Av = +6, and Rf = 500 Ohms. -55 C < Ta < +125C . (NOTE 1)
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
+Iin Input bias
current
(noninverting)
-10 +10 uA 1
-15 +15 uA 2, 3
-Iin Input bias
current
(inverting)
-12 +12 uA 1
-20 +20 uA 2, 3
Vio Input offset
voltage Rs = 50 Ohms -6.0 +6.0 mV 1
-10.0 +10.0 mV 2, 3
Is Supply current
(all channels) No load 27 mA 1, 3
28 mA 2
PSRR Power supply
rejection ratio +Vs = +4.5V to +5.0V, -Vs = -4.5V to
-5.0V 53 dB 1
50 dB 2
55 dB 3
AC PARAMETERS
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC: Rl = 100 Ohms, Vs = +5 V dc, Av = +6, and Rf = 500 Ohms. -55 C < Ta < +125C . (NOTE 1)
SSBW Small signal
bandwidth -3dB bandwidth, Vout <2.0Vpp 80 MHz 4
GFPL Gain flatness
peaking low 0.1MHz to 25MHz, Vout <2.0Vpp 0.2 dB 4
GFPH Gain flatness
peaking high >25MHz, Vout <2.0Vpp 0.2 dB 4
HD2 Second harmonic
distortion 2Vpp at 20MHz -38 dBc 4
HD3 Third harmonic
distortion 2Vpp at 20MHz -46 dBc 4
Note 1: The algebraic convention, whereby the most negative value is a minimum and the most
positive is a maximum, is used in this table. Negative current shall be defined as
conventional current flow out of a device terminal.
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MICROCIRCUIT DATA SHEET
MNLMH6722-X REV 1A0
Graphics and Diagrams
GRAPHICS# DESCRIPTION
07066HRA2 CERDIP (J), 14 LEAD (B/I CKT)
07071HRA2 CERAMIC SOIC (WG), 14LD (B/I CKT)
J14ARJ CERDIP (J), 14 LEAD (P/P DWG)
P000488A CERDIP (J), 14 LEAD (PIN OUT)
P000489A CERAMIC SOIF (WG), 14LD (PIN OUT)
WG14ARC CERAMIC SOIC (WG), 14LD (P/P DWG)
See attached graphics following this page.
6
N
MIL/AEROSPACE OPERATIONS
2900 SEMICONDUCTOR DRIVE
SANTA CLARA, CA 95050
1 14
2 13
3 12
4 11
5 10
6 9
7 8 OUT C
OUT B
+IN B
-IN A
OUT A
-IN C
14 - LEAD DIP
LMH6722J
TOP VIEW
CONNECTION DIAGRAM
P000488A
V -
- IN B
-IN D
+IN C
+IN A
OUT D
V +
+IN D
MIL/AEROSPACE OPERATIONS
2900 SEMICONDUCTOR DRIVE
SANTA CLARA, CA 95050
1 14
2 13
3 12
4 11
5 10
6 9
7 8 OUT C
OUT B
+IN B
-IN A
OUT A
-IN C
14 - LEAD FLAT PACK/SOIC
LMH6722W/WG
TOP VIEW
CONNECTION DIAGRAM
P000489A
V -
-IN B
-IN D
+IN C
+IN A
OUT D
V +
+IN D
National Semiconductor
