1
技术信息/TechnicalInformation
FF900R12IE4V
IGBT-模块
IGBT-modules
preparedby:TA
approvedby:DTS
dateofpublication:2013-11-26
revision:2.0
PrimePACK™2模块采用第四代沟槽栅/场终止IGBT4和第四代发射极控制二极管带有温度检测NTC
PrimePACK™2modulewithTrench/FieldstopIGBT4andEmitterControlled4diodeandNTC
初步数据/PreliminaryData
VCES = 1200V
IC nom = 900A / ICRM = 1800A
典型应用 TypicalApplications
• •商业性农用车辆 CommercialAgricultureVehicles
电气特性 ElectricalFeatures
• •提高工作结温Tvjop ExtendedOperationTemperatureTvjop
• •高直流电压稳定性 HighDCStability
• •高短路能力，自限制短路电流 High Short Circuit Capability, Self Limiting Short
CircuitCurrent
• •低开关损耗 LowSwitchingLosses
• •无与伦比的坚固性 UnbeatableRobustness
• •VCEsat带正温度系数 VCEsatwithpositiveTemperatureCoefficient
机械特性 MechanicalFeatures
• •4kV交流1分钟绝缘 4kVAC1minInsulation
• •封装的CTI>400 PackagewithCTI>400
• •高爬电距离和电气间隙 HighCreepageandClearanceDistances
• •高功率循环和温度循环能力 HighPowerandThermalCyclingCapability
• •高功率密度 HighPowerDensity
• •低热阻衬底 SubstrateforLowThermalResistance
ModuleLabelCode
BarcodeCode128
DMX-Code
ContentoftheCode Digit
ModuleSerialNumber 1-5
ModuleMaterialNumber 6-11
ProductionOrderNumber 12-19
Datecode(ProductionYear) 20-21
Datecode(ProductionWeek) 22-23
2
技术信息/TechnicalInformation
FF900R12IE4V
IGBT-模块
IGBT-modules
preparedby:TA
approvedby:DTS
dateofpublication:2013-11-26
revision:2.0
初步数据
PreliminaryData
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极－发射极电压
Collector-emittervoltage Tvj = 25°C VCES 1200 V
连续集电极直流电流
ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C IC nom 900 A
集电极重复峰值电流
Repetitivepeakcollectorcurrent tP = 1 ms ICRM 1800 A
总功率损耗
Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 5,10 kW
栅极－发射极峰值电压
Gate-emitterpeakvoltage VGES +/-20 V
特征值/CharacteristicValues min. typ. max.
集电极－发射极饱和电压
Collector-emittersaturationvoltage IC = 900 A, VGE = 15 V
IC = 900 A, VGE = 15 V
IC = 900 A, VGE = 15 V
VCE sat
1,75
2,05
2,10
2,05
V
V
V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
栅极阈值电压
Gatethresholdvoltage IC = 33,0 mA, VCE = VGE, Tvj = 25°C VGEth 5,2 5,8 6,4 V
栅极电荷
Gatecharge VGE = -15 V ... +15 V QG6,40 µC
内部栅极电阻
Internalgateresistor Tvj = 25°C RGint 1,2 Ω
输入电容
Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 54,0 nF
反向传输电容
Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 3,00 nF
集电极-发射极截止电流
Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA
栅极-发射极漏电流
Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload IC = 900 A, VCE = 600 V
VGE = ±15 V
RGon = 1,5 Ω
td on
0,20
0,22
0,22
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload IC = 900 A, VCE = 600 V
VGE = ±15 V
RGon = 1,5 Ω
tr
0,11
0,12
0,13
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload IC = 900 A, VCE = 600 V
VGE = ±15 V
RGoff = 1,5 Ω
td off
0,66
0,75
0,79
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload IC = 900 A, VCE = 600 V
VGE = ±15 V
RGoff = 1,5 Ω
tf
0,09
0,14
0,15
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse IC = 900 A, VCE = 600 V, LS = 45 nH
VGE = ±15 V, di/dt = 5700 A/µs (Tvj = 150°C)
RGon = 1,3 ΩEon
55,0
70,0
80,0
mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断损耗能量(每脉冲）
Turn-offenergylossperpulse IC = 900 A, VCE = 600 V, LS = 45 nH
VGE = ±15 V, du/dt = 3200 V/µs (Tvj = 150°C)
RGoff = 1,5 ΩEoff
85,0
120
130
mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
短路数据
SCdata VGE ≤ 15 V, VCC = 900 V
VCEmax = VCES -LsCE ·di/dt ISC
3600
A
Tvj = 150°C
tP ≤ 10 µs,
结－外壳热阻
Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 29,5 K/kW
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 14,0 K/kW
在开关状态下温度
Temperatureunderswitchingconditions Tvj op -40 150 °C
3
技术信息/TechnicalInformation
FF900R12IE4V
IGBT-模块
IGBT-modules
preparedby:TA
approvedby:DTS
dateofpublication:2013-11-26
revision:2.0
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage Tvj = 25°C VRRM 1200 V
连续正向直流电流
ContinuousDCforwardcurrent IF900 A
正向重复峰值电流
Repetitivepeakforwardcurrent tP = 1 ms IFRM 1800 A
I2t-值
I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C I²t 91,0
88,0 kA²s
kA²s
特征值/CharacteristicValues min. typ. max.
正向电压
Forwardvoltage IF = 900 A, VGE = 0 V
IF = 900 A, VGE = 0 V
IF = 900 A, VGE = 0 V
VF
1,90
1,85
1,80
2,30
V
V
V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复峰值电流
Peakreverserecoverycurrent IF = 900 A, - diF/dt = 5700 A/µs (Tvj=150°C)
VR = 600 V
VGE = -15 V
IRM
500
660
710
A
A
A
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
恢复电荷
Recoveredcharge IF = 900 A, - diF/dt = 5700 A/µs (Tvj=150°C)
VR = 600 V
VGE = -15 V
Qr
90,0
150
195
µC
µC
µC
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复损耗（每脉冲）
Reverserecoveryenergy IF = 900 A, - diF/dt = 5700 A/µs (Tvj=150°C)
VR = 600 V
VGE = -15 V
Erec
40,0
80,0
90,0
mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
结－外壳热阻
Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 53,5 K/kW
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 25,5 K/kW
在开关状态下温度
Temperatureunderswitchingconditions Tvj op -40 150 °C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues min. typ. max.
额定电阻值
Ratedresistance TC = 25°C R25 5,00 kΩ
R100偏差
DeviationofR100 TC = 100°C, R100 = 493 Ω ∆R/R -5 5 %
耗散功率
Powerdissipation TC = 25°C P25 20,0 mW
B-值
B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K
B-值
B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K
B-值
B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
4
技术信息/TechnicalInformation
FF900R12IE4V
IGBT-模块
IGBT-modules
preparedby:TA
approvedby:DTS
dateofpublication:2013-11-26
revision:2.0
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. VISOL 4,0 kV
模块基板材料
Materialofmodulebaseplate Cu
内部绝缘
Internalisolation 基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140) Al2O3
爬电距离
Creepagedistance 端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal 33,0
33,0 mm
电气间隙
Clearance 端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal 19,0
19,0 mm
相对电痕指数
Comperativetrackingindex CTI > 400
min. typ. max.
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个模块/permodule
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 4,50 K/kW
杂散电感,模块
Strayinductancemodule LsCE 18 nH
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip TC=25°C,每个开关/perswitch RCC'+EE' 0,30 mΩ
储存温度
Storagetemperature Tstg -40 150 °C
模块安装的安装扭距
Mountingtorqueformodulmounting 螺丝M5根据相应的应用手册进行安装
ScrewM5-Mountingaccordingtovalidapplicationnote M 3,00 - 6,00 Nm
端子联接扭距
Terminalconnectiontorque 螺丝M4根据相应的应用手册进行安装
ScrewM4-Mountingaccordingtovalidapplicationnote
螺丝M8根据相应的应用手册进行安装
ScrewM8-Mountingaccordingtovalidapplicationnote
M
1,8
8,0
-
-
2,1
10
Nm
Nm
重量
Weight G825 g
5
技术信息/TechnicalInformation
FF900R12IE4V
IGBT-模块
IGBT-modules
preparedby:TA
approvedby:DTS
dateofpublication:2013-11-26
revision:2.0
初步数据
PreliminaryData
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
VCE [V]
IC [A]
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5
0
200
400
600
800
1000
1200
1400
1600
1800
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
VCE [V]
IC [A]
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
0
200
400
600
800
1000
1200
1400
1600
1800
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
VGE [V]
IC [A]
5 6 7 8 9 10 11 12
0
200
400
600
800
1000
1200
1400
1600
1800
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开关损耗IGBT,逆变器（典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=1.3Ω,RGoff=1.5Ω,VCE=600V
IC [A]
E [mJ]
0 200 400 600 800 1000 1200 1400 1600 1800
0
50
100
150
200
250
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
6
技术信息/TechnicalInformation
FF900R12IE4V
IGBT-模块
IGBT-modules
preparedby:TA
approvedby:DTS
dateofpublication:2013-11-26
revision:2.0
初步数据
PreliminaryData
开关损耗IGBT,逆变器（典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=900A,VCE=600V
RG [Ω]
E [mJ]
0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0
0
50
100
150
200
250
300
350
400
450
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
t [s]
ZthJC [K/kW]
0,001 0,01 0,1 1 10
0,1
1
10
100
ZthJC : IGBT
i:
ri[K/kW]:
τi[s]:
1
1,2
0,0008
2
6
0,013
3
20
0,05
4
2,3
0,6
反偏安全工作区IGBT,逆变器（RBSOA）
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=1.5Ω,Tvj=150°C
VCE [V]
IC [A]
0 200 400 600 800 1000 1200 1400
0
200
400
600
800
1000
1200
1400
1600
1800
2000
IC, Modul
IC, Chip
正向偏压特性二极管,逆变器（典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
VF [V]
IF [A]
0,0 0,5 1,0 1,5 2,0 2,5 3,0
0
200
400
600
800
1000
1200
1400
1600
1800
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
7
技术信息/TechnicalInformation
FF900R12IE4V
IGBT-模块
IGBT-modules
preparedby:TA
approvedby:DTS
dateofpublication:2013-11-26
revision:2.0
初步数据
PreliminaryData
开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=1.3Ω,VCE=600V
IF [A]
E [mJ]
0 200 400 600 800 1000 1200 1400 1600
0
10
20
30
40
50
60
70
80
90
100
110
120 Erec, Tvj = 125°C
Erec, Tvj = 150°C
开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=900A,VCE=600V
RG [Ω]
E [mJ]
0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0
0
10
20
30
40
50
60
70
80
90
100
110
120
Erec, Tvj = 125°C
Erec, Tvj = 150°C
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
t [s]
ZthJC [K/kW]
0,001 0,01 0,1 1 10
0,1
1
10
100
ZthJC : Diode
i:
ri[K/kW]:
τi[s]:
1
4,5
0,0008
2
12,7
0,013
3
35,4
0,05
4
0,9
0,6
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
TC [°C]
R[Ω]
0 20 40 60 80 100 120 140 160
100
1000
10000
100000
Rtyp
8
技术信息/TechnicalInformation
FF900R12IE4V
IGBT-模块
IGBT-modules
preparedby:TA
approvedby:DTS
dateofpublication:2013-11-26
revision:2.0
初步数据
PreliminaryData
接线图/circuit_diagram_headline
封装尺寸/packageoutlines
9
技术信息/TechnicalInformation
FF900R12IE4V
IGBT-模块
IGBT-modules
preparedby:TA
approvedby:DTS
dateofpublication:2013-11-26
revision:2.0
初步数据
PreliminaryData
使用条件和条款
使用条件和条款
产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合
产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证
请注意安装及应用指南中的信息。
如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话，请联系我们负责你的销售部门（详情查询
www.infineon.com）。对那些特别感兴趣的问题我们将提供相应的应用手册
由于技术需要，我们的产品可能含有危险物质。如果需要查询类似问题请联系我们负责你的销售部门
如果您想将我们的产品用于航天，健康，危及生命或者生命维持等应用，请申明。
请注意，对这类应用我们强烈建议
-执行联合的风险和质量评估
-得到质量协议的结论
-建立联合的测试和出厂产品检查，我们可以根据测试的实际情况供货
如果有必要，请根据实际需要将类似的说明给你的客户
保留产品规格书的修改权
Terms&Conditionsofusage
Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill
havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
application.
Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted
exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically
interestedwemayprovideapplicationnotes.
Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe
salesoffice,whichisresponsibleforyou.
ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please
note,thatforanysuchapplicationsweurgentlyrecommend
-toperformjointRiskandQualityAssessments;
-theconclusionofQualityAgreements;
-toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon
therealizationofanysuchmeasures.
Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers.
Changesofthisproductdatasheetarereserved.