1
Motorola RF Device Data
. . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity
protection diodes, these state-of-the-art devices have the following features:
•Planar Epitaxial Construction
•Nitride Passivation for Stable Blocking Characteristics
•Monolithic Dual Die Construction – May be Paralleled for High Current Output
(10A per leg or 20A per package)
•Epoxy Meets UL94, VO @ 1/8″
•Hyperfast and Soft Reverse Recovery Over Specified Temperature Range (15 ns)
Mechanical Characteristics
•Case: Epoxy, Molded
•Weight: 1.9 grams (approximately)
•Finish: All External Surfaces Corrosion Resistant & Terminal Leads are Readily Solderable
•Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
•Shipped 50 units per plastic tube
•Available in 24mm Tape and Reel, 800 units/reel by adding a T4 suffix to the part number
•Marking: MGRB2025CT
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
250 V
DC Forward Current Per Leg
(TC = 95°C) IDC 10 A
Peak Repetitive Forward Current Per Leg
(At Rated VR, Square Wave, 20 kHz, TC = 25°C) IFRM 20 A
Non–Repetitive Peak Surge Current Per Package
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM 40 A
Operating Junction Temperature and Storage Temperature TJ, Tstg –55 to 175 °C
THERMAL CHARACTERISTICS
Thermal Resistance – Junction to Case Per Leg RθJC 3.1 °C/W
Thermal Resistance – Junction to Ambient Per Leg RθJA 53
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1), see Figure 2 Per Leg
VF
V
(IF = 10 A)
(IF = 5 A)
Maximum Instantaneous Reverse Current, see Figure 4 Per Leg
IR
(VR = 250 V)
(VR = 125 V)
Typical Reverse Recovery Time (2) Per Leg
(VR = 200 V, IF = 5 A, di/dt = 200 A/µs)
(VR = 200 V, IF = 10 A, di/dt = 200 A/µs)
trr
ns
(VR = 200 V, IF = 5 A, di/dt = 200 A/µs)
(VR = 200 V, IF = 10 A, di/dt = 200 A/µs)
Typical Peak Reverse Recovery Current Per Leg
(VR = 200 V, IF = 5 A, di/dt = 200 A/µs)
(VR = 200 V, IF = 10 A, di/dt = 200 A/µs)
IRM
A
(VR = 200 V, IF = 5 A, di/dt = 200 A/µs)
(VR = 200 V, IF = 10 A, di/dt = 200 A/µs)
1.4
1.5 1.4
1.5
Note: This data sheet contains advance information only and is subject to change without notice.
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.
(2) trr measured projecting from 25% of IRM to ground.
Order this document
by MGRB2025CT/D
SEMICONDUCTOR TECHNICAL DATA
GALLIUM ARSENIDE
RECTIFIER
20 AMPERES
250 VOLTS
1
32, 4
CASE 418B–02
D2PAK
1
2, 4
3