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Page <1> V1.025/02/13
High-Speed Double Diode
Features:
• Very Small Plastic SMD Package
• High Switching Speed : 4ns (Max.)
• Continuous Reverse Voltage : 75V (Max.)
• Repetitive Peak Reverse Voltage : 85V (Max.)
• Repetitive Peak Forward Current : 500mA (Max.)
Applications:
High-speed switching in e.g. surface mounted circuits
Max. Rating @ Ta = 25°C unless otherwise specied
Parameter Symbol Limits Unit
Peak repetitive reverse voltage Vrrm 85 V
Continuous reverse voltage Vr75 V
RMS reverse voltage Vr(rms)53 V
Forward continuous current (Max.) Single diode loaded
Both diodes loaded Ifm 150
75 mA
Repetitive peak forward current Ifrm 500 mA
Non-repetitive peak forward surge current
@t = 1μs
@t = 1ms
@t = 1s
Ifsm 4
1
0.5
A
Total power dissipation Ts = 90°C; one diode loaded Ptot 170 mW
Junction and storage temperature Tj, Tstg -65 to +150 °C
Electrical Characteristics @ Ta = 25°C unless otherwise specied
Parameter Symbol Conditions Min. Max. Unit
Leakage current Ir
Vr = 25V
Vr = 75V
Vr = 25V, Tj = 150°C
Vr = 75V, Tj = 150°C
-
30
2
60
100
nA
μA
μA
μA
Forward voltage Vf
If = 1mA
If = 10mA
If = 50mA
If = 150mA
-
0.715
0.855
1
1.25
V
Diode capacitance CdVr =0V, f=1MHz - 1.5 pF
Forward recovery voltage Vff If = 10mA, tr = 20ns - 1.75 V
Reverse recovery time trr If = Ir = 10mA,
Irr = 0.1 × Ir, Rl = 100Ω - 4 ns