2N7274D - Fairchild Semiconductor

2N7274D, 2N7274R

2N7274H

Radiation Hardened

N-Channel Power MOSFETs

Package

TO-204AA

Symbol

Features

• 8A, 200V, RDS(on) = 0.50

Ω

• Second Generation Rad Hard MOSFET Results From New Design Concepts

• Gamma - Meets Pre-Rad Speciﬁcations to 100KRAD(Si)

- Deﬁned End Point Specs at 300KRAD(Si) and 1000KRAD(Si)

- Performance Permits Limited Use to 3000KRAD(Si)

• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically

- Survives 2E12 Typically If Current Limited to IDM

• Photo Current - 3.0nA Per-RAD(Si)/sec Typically

• Neutron - Pre-RAD Speciﬁcations for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

• Single Event - Typically Survives 1E5ions/cm

Having an

LET

≤

35MeV/mg/cm

and a Range

≥

m at 80% BVDSS

Description

The Harris Semiconductor Sector has designed a series of SECOND GENERA-

TION hardened power MOSFETs of both N and P channel enhancement types

with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m

Ω

Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron

hardness ranging from 1E13n/cm

for 500V product to 1E14n/cm

for 100V prod-

uct. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current lim-

iting and 2E12 with current limiting. Heavy ion survival from signal event drain

burn-out exists for linear energy transfer (LET) of 35 at 80% of rated voltage.

This MOSFET is an enhancement-mode silicon-gate power ﬁeld effect transistor of

the vertical DMOS (VDMOS) structure. It is specially designed and processed to

exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n

)

exposures. Design and processing efforts are also directed to enhance survival to

heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

This part may be supplied as a die or in various packages other than shown above.

Reliability screening is available as either non TX (commercial), TX equivalent of

MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-

19500. Contact the Harris Semiconductor High-Reliability Marketing group for any

desired deviations from the data sheet.

REGISTRATION PENDING

Currently Available as FRM230 (D, R, H)

December 2001

Absolute Maximum Ratings

(TC = +25

C) Unless Otherwise Speciﬁed

2N7274D, R, H UNITS

Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 200 V

Drain-Gate Voltage (RGS = 20k

Ω

). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 200 V

Continuous Drain Current

TC = +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

TC = +100

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 24 A

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

20 V

Maximum Power Dissipation

TC = +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

TC = +100

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

Derated Above +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.60

Inductive Current, Clamped, L = 100

H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . . . ILM 24 A

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS 8 A

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 24 A

Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG -55 to +150

Lead Temperature (During Soldering)

Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300

Speciﬁcations 2N7274D, 2N7274R, 2N7274H - Registration Pending

Pre-Radiation Electrical Speciﬁcations

TC = +25

C, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS

LIMITS

UNITSMIN MAX

Drain-Source Breakdown Volts BVDSS VGS = 0, ID = 1mA 200 - V

Gate-Threshold Volts VGS(th) VDS = VGS, ID = 1mA 2.0 4.0 V

Gate-Body Leakage Forward IGSSF VGS = +20V - 100 nA

Gate-Body Leakage Reverse IGSSR VGS = -20V - 100 nA

Zero-Gate Voltage

Drain Current

IDSS1

IDSS2

IDSS3

VDS = 200V, VGS = 0

VDS = 160V, VGS = 0

VDS = 160V, VGS = 0, TC = +125

0.025

0.25

Rated Avalanche Current IAR Time = 20

s - 24 A

Drain-Source On-State Volts VDS(on) VGS = 10V, ID = 8A - 4.20 V

Drain-Source On Resistance RDS(on) VGS = 10V, ID = 5A - .50

Ω

Turn-On Delay Time td(on) VDD = 100V, ID = 8A - 30

Rise Time tr Pulse Width = 3

s - 130

Turn-Off Delay Time td(off) Period = 300

s, Rg = 25

Ω

- 150

Fall Time tf 0

≤

VGS

≤

10 (See Test Circuit) - 80

Gate-Charge Threshold QG(th)

VDD = 100V, ID = 8A

IGS1 = IGS2

≤

VGS

≤

ncGate-Charge On State QG(on) 15 60

Gate-Charge Total QGM 30 120

Plateau Voltage VGP 3 14 V

Gate-Charge Source QGS 3 14

Gate-Charge Drain QGD 7 29

Diode Forward Voltage VSD ID = 8A, VGD = 0 0.6 1.8 V

Reverse Recovery Time TT I = 8A; di/dt = 100A/

s - 600 ns

Junction-To-Case R

jc - 1.67

C/W

Junction-To-Ambient R

ja Free Air Operation - 60

FIGURE 1. SWITCHING TIME TESTING FIGURE 2. CLAMPED INDUCTIVE SWITCHING, ILM

VDD

VDS

DUT

0.06Ω

E1 = 0.5 BVDSS VC = 0.75 BVDSS

2N7274D, 2N7274R, 2N7274H - Registration Pending

Post-Radiation Electrical Speciﬁcations

TC = +25

C, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TYPE TEST CONDITIONS

LIMITS

UNITSMIN MAX

Drain-Source

Breakdown Volts

(Note 4, 6) BVDSS 2N7274D, R VGS = 0, ID = 1mA 200 - V

(Note 5, 6) BVDSS 2N7274H VGS = 0, ID = 1mA 190 - V

Gate-Source

Threshold Volts

(Note 4, 6) VGS(th) 2N7274D, R VGS = VDS, ID = 1mA 2.0 4.0 V

(Note 3, 5, 6) VGS(th) 2N7274H VGS = VDS, ID = 1mA 1.5 4.5 V

Gate-Body

Leakage Forward

(Note 4, 6) IGSSF 2N7274D, R VGS = 20V, VDS = 0 - 100 nA

(Note 5, 6) IGSSF 2N7274H VGS = 20V, VDS = 0 - 200 nA

Gate-Body

Leakage Reverse

(Note 2, 4, 6) IGSSR 2N7274D, R VGS = -20V, VDS = 0 - 100 nA

(Note 2, 5, 6) IGSSR 2N7274H VGS = -20V, VDS = 0 - 200 nA

Zero-Gate Voltage

Drain CurrenT

(Note 4, 6) IDSS 2N7274D, R VGS = 0, VDS = 160V - 25

(Note 5, 6) IDSS 2N7274H VGS = 0, VDS = 160V - 100

Drain-Source

On-state Volts

(Note 1, 4, 6) VDS(on) 2N7274D, R VGS = 10V, ID = 8A - 4.20 V

(Note 1, 5, 6) VDS(on) 2N7274H VGS = 16V, ID = 8A - 6.30 V

Drain-Source

On Resistance

(Note 1, 4, 6) RDS(on) 2N7274D, R VGS = 10V, ID = 5A - 0.500

Ω

(Note 1, 5, 6) RDS(on) 2N7274H VGS = 14V, ID = 5A - 0.750

Ω

NOTES:

1. Pulse test, 300

s max

2. Absolute value

3. Gamma = 300KRAD(Si)

4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 1E13

5. Gamma = 1000KRAD(Si). Neutron = 1E13

6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS

7. Gamma data taken 3/03/90 on TA17632 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA

19401

8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989

9. Neutron derivation, HARRIS Application note AN-8831, Oct. 1988

2N7274D, 2N7274R, 2N7274H - Registration Pending

Typical Performance Characteristics

2N7274D, 2N7274R, 2N7274H - Registration Pending

Packaging

NOTES:

1. These dimensions are within allowable dimensions of Rev. C of

JEDEC TO-204AA outline dated 11-82.

2. Lead dimension (without solder).

3. Add typically 0.002 inches (0.05mm) for solder coating.

4. Position of lead to be measured 0.250 inches (6.35mm) from bot-

tom of seating plane.

5. Controlling dimension: Inch.

6. Revision 1 dated 1-93.

ØD

Øb

SEATING

PLANE ØP

Øb1

TERM. 3

TO-204AA

JEDEC TO-204AA HERMETIC STEEL PACKAGE

SYMBOL

INCHES MILLIMETERS

NOTESMIN MAX MIN MAX

A 0.310 0.330 7.88 8.38 -

0.060 0.065 1.53 1.65 -

Øb 0.038 0.042 0.97 1.06 2, 3

Øb

0.138 0.145 3.51 3.68 -

ØD - 0.800 - 20.32 -

e 0.215 TYP 5.46 TYP 4

0.430 BSC 10.92 BSC 4

L 0.440 0.460 11.18 11.68 -

ØP 0.155 0.160 3.94 4.06 -

q 1.187 BSC 30.15 BSC -

R 0.495 0.525 12.58 13.33 -

0.131 0.185 3.33 4.69 -

s 0.655 0.675 16.64 17.14 -

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

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not intended to be an exhaustive list of all such trademarks.

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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

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systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

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In Design

First Production

Full Production

Not In Production

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