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FCP13N60N / FCPF13N60NT N-Channel SupreMOS(R) MOSFET 600 V, 13 A, 258 m Features Description * RDS(on) = 220 m (Typ.) @ VGS = 10 V, ID = 6.5 A The SupreMOS(R) MOSFET is Fairchild Semiconductor's next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. * Ultra Low Gate Charge (Typ. Qg = 30.4 nC) * Low Effective Output Capacitance (Typ. Coss(eff.) = 145 pF) * 100% Avalanche Tested * RoHS Compliant Application * LCD/LED/PDP TV * Lighting * Solar Inverter * AC-DC Power Supply D GD S G G D S TO-220 TO-220F S MOSFET Maximum Ratings TC = Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage 25oC unless otherwise noted. Parameter FCP13N60N FCPF13N60NT 600 Unit V 30 - Continuous (TC = 25oC) V 13 13* 8.2 8.2* ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 4.3 A EAR Repetitive Avalanche Energy (Note 1) 1.16 mJ 100 V/ns dv/dt - Continuous (TC = 100oC) - Pulsed (Note 1) 39 Peak Diode Recovery dv/dt (Note 3) (TC = 25oC) Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds - Derate Above 25oC A 235 MOSFET dv/dt PD TL 39 A mJ 20 V/ns 116 33.8 W 0.93 0.27 W/oC -55 to +150 oC 300 oC *Drain current limited by maximum junction temperature. Thermal Characteristics FCP13N60N FCPF13N60NT RJC Symbol Thermal Resistance, Junction to Case, Max. Parameter 1.07 3.7 RJA Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 (c)2009 Fairchild Semiconductor Corporation FCP13N60N / FCPF13N60NT Rev. C1 1 Unit o C/W www.fairchildsemi.com FCP13N60N / FCPF13N60NT -- N-Channel SupreMOS(R) MOSFET November 2013 Part Number FCP13N60N Top Mark FCP13N60N Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units FCPF13N60NT FCPF13N60NT TO-220F Tube N/A N/A 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 600 - - V - 0.73 - V/oC Off Characteristics BVDSS BVDSS / TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 1 mA, VGS = 0 V, TC = 25oC ID = 1 mA, Referenced to 25oC VDS = 480 V, VGS = 0 V - - 10 VDS = 480 V, VGS = 0 V, TC = 125oC - - 100 VGS = 30 V, VDS = 0 V - - 100 A nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 A 2.0 - 4.0 V Static Drain to Source On Resistance VGS = 10 V, ID = 6.5 A - 0.220 0.258 gFS Forward Transconductance VDS = 40 V, ID = 6.5 A - 16.3 - S VDS = 100 V, VGS = 0 V, f = 1 MHz - 1325 1765 pF - 50 65 pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 3 5 Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 30 - pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 145 - pF Qg(tot) Total Gate Charge at 10V 30.4 39.5 nC Gate to Source Gate Charge VDS = 380 V,ID = 6.5 A, VGS = 10 V - Qgs - 6.0 - nC - 9.5 - nC - 2.8 - - 14.5 39 ns - 10.6 31.2 ns - 45 100 ns - 9.8 29.6 ns Qgd Gate to Drain "Miller" Charge ESR Equivalent Series Resistance (G-S) (Note 4) f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380 V, ID = 6.5 A, VGS = 10 V, RG = 4.7 (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 13* A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 39 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 6.5 A - - 1.2 V trr Reverse Recovery Time - 287 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 6.5 A, dIF/dt = 100 A/s - 3.5 - C Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 4.3 A, RG = 25 , starting TJ = 25C. 3. ISD 13 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature typical characteristics. (c)2009 Fairchild Semiconductor Corporation FCP13N60N / FCPF13N60NT Rev. C1 2 www.fairchildsemi.com FCP13N60N / FCPF13N60NT -- N-Channel SupreMOS(R) MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 60 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V ID, Drain Current[A] ID, Drain Current[A] 40 10 10 o 150 C o 25 C 1 *Notes: 1. 250s Pulse Test *Notes: 1. VDS = 20V 2. 250s Pulse Test o 3 0.6 2. TC = 25 C 1 10 0.2 20 2 VDS, Drain-Source Voltage[V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.6 0.4 VGS = 10V VGS = 20V 0.2 o 150 C *Notes: TC = 25 C 0 10 20 30 ID, Drain Current [A] *Notes: 1. VGS = 0V 1 0.4 40 Figure 5. Capacitance Characteristics 10000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 100 1 0.1 1.6 Figure 6. Gate Charge Characteristics Ciss 10 2. 250s Pulse Test 0.8 1.2 VSD, Body Diode Forward Voltage [V] 10 VGS, Gate-Source Voltage [V] 50000 o 25 C 10 o Capacitances [pF] 8 100 IS, Reverse Drain Current [A] RDS(ON) [], Drain-Source On-Resistance 4 6 VGS, Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.8 0.0 o -55 C Coss *Notes: 1. VGS = 0V 2. f = 1MHz Crss 1 10 100 VDS, Drain-Source Voltage [V] (c)2009 Fairchild Semiconductor Corporation FCP13N60N / FCPF13N60NT Rev. C1 8 6 4 2 0 600 3 VDS = 120V VDS = 380V VDS = 480V *Notes: ID = 6.5A 0 10 20 30 Qg, Total Gate Charge [nC] 40 www.fairchildsemi.com FCP13N60N / FCPF13N60NT -- N-Channel SupreMOS(R) MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 1mA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 -50 0 50 100 150 o TJ, Junction Temperature [ C] 10s ID, Drain Current [A] 10s 100s 10 1ms 10ms 1 DC Operation in This Area is Limited by R DS(on) 1ms Operation in This Area is Limited by R DS(on) DC *Notes: o 1. TC = 25 C o o o 2. TJ = 150 C 3. Single Pulse 10 100 VDS, Drain-Source Voltage [V] 10ms 1 1. TC = 25 C 1 100s 10 0.1 *Notes: 0.1 200 Figure 10. Maximum Safe Operating Area - FCPF13N60NT 100 100 0.01 0.1 *Notes: 1. VGS = 10V 2. ID = 6.5A 0.5 0.0 -100 200 Figure 9. Maximum Safe Operating Area - FCP13N60N ID, Drain Current [A] 2.5 0.01 0.1 1000 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 11. Maximum Drain Current vs. Case Temperature 15 ID, Drain Current [A] 12 9 6 3 0 25 50 75 100 125 o TC, Case Temperature [ C] (c)2009 Fairchild Semiconductor Corporation FCP13N60N / FCPF13N60NT Rev. C1 150 4 www.fairchildsemi.com FCP13N60N / FCPF13N60NT -- N-Channel SupreMOS(R) MOSFET Typical Performance Characteristics (Continued) FCP13N60N / FCPF13N60NT -- N-Channel SupreMOS(R) MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve - FCP13N60N ZJC(t), Thermal Response [oC/W] Thermal Response [ZJC] 2 1 0.5 0.2 0.1 PDM 0.1 0.05 t1 PDM *Notes: 0.02 t2 t o 1. ZJC(t) =1 t1.07 C/W Max. 2 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) 0.01 Single pulse 0.01 -5 10 -4 10 -3 -2 -1 10 10 Rectangular Pulse Duration t , Rectangular Pulse Duration[sec] [sec] 10 1 Figure 13. Transient Thermal Response Curve - FCPF13N60NT ZJC (t), Thermal Response [o]C/W] Thermal Response [ZJC 5 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 0.02 t2 *Notes: 0.01 o 1. ZJC(t) = 3.7 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) Single pulse 0.01 -5 10 (c)2009 Fairchild Semiconductor Corporation FCP13N60N / FCPF13N60NT Rev. C1 -4 10 -3 -2 -1 0 10 10 10 10 [sec] t1Rectangular , RectangularPulse Pulse Duration Duration [sec] 5 1 10 2 10 www.fairchildsemi.com FCP13N60N / FCPF13N60NT -- N-Channel SupreMOS(R) MOSFET IG = const. Figure 14. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 15. Resistive Switching Test Circuit & Waveforms VGS Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms (c)2009 Fairchild Semiconductor Corporation FCP13N60N / FCPF13N60NT Rev. C1 6 www.fairchildsemi.com FCP13N60N / FCPF13N60NT -- N-Channel SupreMOS(R) MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms (c)2009 Fairchild Semiconductor Corporation FCP13N60N / FCPF13N60NT Rev. C1 7 www.fairchildsemi.com FCP13N60N / FCPF13N60NT -- N-Channel SupreMOS(R) MOSFET Mechanical Dimensions Figure 18. TO-220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003 (c)2009 Fairchild Semiconductor Corporation FCP13N60N / FCPF13N60NT Rev. C1 8 www.fairchildsemi.com FCP13N60N / FCPF13N60NT -- N-Channel SupreMOS(R) MOSFET Mechanical Dimensions Figure 19. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003 (c)2009 Fairchild Semiconductor Corporation FCP13N60N / FCPF13N60NT Rev. C1 9 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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