DIM1200DDM12-E000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/9
www.dynexsemi.com
PDS5748-2.3 April 2004
FEATURES
■Trench Gate Field Stop Technology
■Low Conduction Losses
■Low Switching Losses
■10µs Short Circuit Withstand
■Isolated MMC Base with AlN Substrates
■High Thermal Cycling Capability
APPLICATIONS
■High Reliability Inverters
●Wind Turbines
●Motor Controllers
●UPS Systems
■Traction
●Propulsion Drives
●Auxiliaries
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM1200DDM12-E000 is a dual switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand. This module is
optimised for applications requiring high thermal cycling
capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM1200DDM12-E000
Note: When ordering, please use the complete part number.
KEY PARAMETERS
VCES 1200V
VCE(sat) * (typ) 1.7V
IC(max) 1200A
IC(PK) (max) 2400A
*Measured at auxiliary terminals.
DIM1200DDM12-E000
Dual Switch IGBT Module
Fig. 1 Dual switch circuit diagram
Fig. 2 Module Outline
Outline type code: D
(See package details for further information)
3(C1)
5(E1)
6(G1)
7(C1)
12(C2)
11(G2)
10(E2)
1(E1)
4(E2)
2(C2)
DIM1200DDM12-E000
2/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Test Conditions
VGE = 0V
-
Tcase = 70˚C
1ms, Tcase = 110˚C
Tcase = 25˚C, Tj = 150˚C
VR = 0, tp = 10ms, Tvj = 125˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V1 = 1300V, V2 = 1000V, 50Hz RMS
Symbol
VCES
VGES
IC
IC(PK)
Pmax
I2t
Visol
QPD
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Units
V
V
A
A
kW
kA2s
V
PC
Max.
1200
±20
1200
2400
5.2
100
2500
10
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I2t value
Isolation voltage - per module
Partial discharge - per module
DIM1200DDM12-E000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/9
www.dynexsemi.com
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Parameter
Thermal resistance - transistor (per arm)
Thermal resistance - diode (per arm)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
Internal insulation material: AlN
Baseplate material: AlSiC
Creepage distance: 20mm
Clearance: 10mm
CTI (Critical Tracking Index): 175
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-h)
Tj
Tstg
-
Units
˚C/kW
˚C/kW
˚C/kW
˚C
˚C
˚C
Nm
Nm
Nm
Max.
24
40
8
150
125
125
5
2
10
Typ.
-
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
–40
-
-
-
DIM1200DDM12-E000
4/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Test Conditions
VGE = 0V, VCE = VCES
VGE = 0V, VCE = VCES, Tcase = 125˚C
VGE = ±20V, VCE = 0V
IC = 48mA, VGE = VCE
VGE = 15V, IC = 1200A
VGE = 15V, IC = 1200A, , Tcase = 125˚C
DC
tp = 1ms
IF = 1200A
IF = 1200A, Tcase = 125˚C
VCE = 25V, VGE = 0V, f = 1MHz
-
-
T
j
= 125˚C, V
CC
= 1000V,
I1
t
p
≤ 10µs,
V
CE(max)
= V
CES
– L*. di/dt
I2
IEC 60747-9
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance - per arm
Internal transistor resistance - per arm
Short circuit. ISC
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Symbol
ICES
IGES
VGE(TH)
VCE(sat)
†
IF
IFM
VF
†
Cies
LM
RINT
SCData
Units
mA
mA
µA
V
V
V
A
A
V
V
nF
nH
mΩ
A
A
Max.
2
10
4
6.5
2.15
2.5
1200
2400
2.5
3.0
-
-
-
-
-
Typ.
-
-
-
5.8
1.7
2.0
-
-
2.1
2.4
86
20
0.27
4800
4125
Min.
-
-
-
5.0
-
-
-
-
-
-
-
-
-
-
-
Note:
† Measured at auxiliary terminals.
* L is the circuit inductance + LM
DIM1200DDM12-E000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/9
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
µC
µC
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Typ.
700
150
150
600
250
140
12
120
400
42
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
IC = 1200A
VGE = ±15V
VCE = 600V
RG(ON) = 2.4Ω
RG(OFF) = 0.62Ω
L ~ 45nH
IF = 1200A, VR = 600V,
dIF/dt = 3500A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
td(off)
tf
EOFF
td(on)
tr
EON
Qg
Qrr
Irr
EREC
Tcase = 125˚C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
µC
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
820
200
200
600
250
240
250
500
100
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
IC = 1200A
VGE = ±15V
VCE = 600V
RG(ON) = 2.4Ω
RG(OFF) = 0.62Ω
L ~ 45nH
IF = 1200A, VR = 600V,
dIF/dt = 3500A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
EREC
Note:
Switching Characteristic measurements taken using standard driver circuit conditions.
DIM1200DDM12-E000
6/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance
0
40
80
120
160
200
240
280
0 200 400 600 800 1000 1200
Collector current, I
C
- (A)
Switching energy, E
sw
- (mJ)
E
on
(mJ)
E
off
(mJ)
E
rec
(mJ)
Conditions:
T
case
= 125˚C,
R
g(on)
= 2.4 ohms,
R
g(off)
= 0.62 ohms,
V
cc
= 600V
0
200
400
600
800
05.07.510
Gate resistance, R
g
- (ohms)
Switching energy, E
sw
- (mJ)
2.5
E
on
(mJ)
E
off
(mJ)
E
rec
(mJ)
Conditions:
T
case
= 125˚C
I
C
= 1200A
V
cc
= 600V
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Collector voltage, V
ce
- (V)
0
200
400
600
800
1000
1200
1600
1400
1800
2200
2000
2400
Collector current, I
C
- (A)
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
Common emitter
T
case
= 125°C
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Collector voltage, V
ce
- (V)
Collector current, I
C
- (A)
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
Common emitter
T
case
= 25°C
DIM1200DDM12-E000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/9
www.dynexsemi.com
Fig. 7 Diode typical forward characteristics Fig. 8 IGBT reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area
0
400
800
1200
1600
2000
2400
2800
0 200 400 600 800 1000 1200 1400
Collector emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
T
case
= 125˚C
V
ge
= +/-15V
R
g(off)
= 0.62 ohms
Module
Chip
Fig. 10 Transient thermal impedance
0
400
800
1200
1600
2000
2400
0 1.0 2.0 3.0 4.0
Forward voltage, VF - (V)
Forward current, IF - (A)
Tj = 25˚C
Tj = 125˚C
1
10
100
1000
0.001 0.01 0.1 1.0 10
Time - (s)
Transient thermal impdeance, Z
th(j-c)
- (°C/kW)
IGBT
Diode
IGBT R
i
(˚C/KW)
τ
i
(ms)
Diode R
i
(˚C/KW)
τ
i
(ms)
1
0.3671
0.0447
1.23
0.11
2
2.9287
1.3195
9.26
4.24
3
12.2198
39.9134
12.96
48.75
4
8.0985
126.9362
16.53
256.75
0
100
200
300
400
500
600
700
0 200 400 600 800 1000 1200 1400
Reverse voltage, VR - (V)
Reverse recovery current, Irr - (A)
Tcase =125˚C
DIM1200DDM12-E000
8/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
140
31.5
4x M8
28
5
38
6x M4
18
26
13
11.5 35
14 20
43.3 11.85
57 57
65 65
6x Ø7
62
15
62
15
13
24
16
13
24
12
11
10
7
6
5
8
9
Main Terminal screw plastic hole depth (M8) = 16.8 ± 0.3
Auxiliary and Gate pin plastic hole depth (M4) = 9 ± 0.3
Copper terminal thickness, Main Terminal pins = 1.5 ± 0.1
Copper terminal thickness, Auxiliary and Gate pin = 0.9 ± 0.1
Nominal weight: 1050g
Module outline type code: D
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
3(C1)
5(E1)
6(G1)
7(C1)
12(C2)
11(G2)
10(E2)
1(E1)
4(E2)
2(C2)
Fig. 11 Package details
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 60 69 32 36. Fax: +33 (0)1 60 69 31 97.
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Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
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as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company
reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee
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