2N5655 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

  

  

. . . designed for use in line–operated equipment such as audio output amplifiers;

low–current, high–voltage converters; and AC line relays.

•Excellent DC Current Gain — hFE = 30–250 @ IC = 100 mAdc

•Current–Gain — Bandwidth Product —

fT = 10 MHz (Min) @ IC = 50 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS (1)

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎ

Symbol

ÎÎÎÎ

2N5655

ÎÎÎ

2N5656

ÎÎÎÎ

2N5657

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎ

VCEO

ÎÎÎÎ

250

ÎÎÎ

300

ÎÎÎÎ

350

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎ

VCB

ÎÎÎÎ

275

ÎÎÎ

325

ÎÎÎÎ

375

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎ

VEB

ÎÎÎÎÎÎÎÎÎ

6.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎ

ÎÎÎÎÎÎÎÎÎ

0.5

1.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎ

ÎÎÎÎÎÎÎÎÎ

0.25

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

ÎÎÎ

ÎÎÎÎÎÎÎÎÎ

0.16

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

θJC

ÎÎÎÎÎÎ

6.25

ÎÎÎ

C/W

(1) Indicates JEDEC Registered Data.

025 50 75 100 150

Figure 1. Power Derating

TC, CASE TEMPERATURE (

PD, POWER DISSIPATION (WATTS)

125

Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed.

Figure 2. Sustaining Voltage Test Circuit

50 mH

200

50 V +

–

TO SCOPE

Hg RELAY

300 1.0

6.0 V



SEMICONDUCTOR TECHNICAL DATA Order this document

by 2N5655/D

 Motorola, Inc. 1995







0.5 AMPERE

POWER TRANSISTORS

NPN SILICON

250–300–350 VOLTS

20 WATTS

CASE 77–08

TO–225AA TYPE

REV 3

  

2Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage 2N5655

(IC = 100 mAdc (inductive), L = 50 mH) 2N5656

2N5657

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

250

300

350

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Breakdown Voltage 2N5655

(IC = 1.0 mAdc, IB = 0) 2N5656

2N5657

ÎÎÎÎ

V(BR)CEO

ÎÎÎÎ

250

300

350

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 150 Vdc, IB = 0) 2N5655

(VCE = 200 Vdc, IB = 0) 2N5656

(VCE = 250 Vdc, IB = 0) 2N5657

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

0.1

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 250 Vdc, VEB(off) = 1.5 Vdc) 2N5655

(VCE = 300 Vdc, VEB(off) = 1.5 Vdc) 2N5656

(VCE = 350 Vdc, VEB(off) = 1.5 Vdc) 2N5657

(VCE = 150 Vdc, VEB(off) = 1.5 Vdc, TC = 100

C) 2N5655

(VCE = 200 Vdc, VEB(off) = 1.5 Vdc, TC = 100

C) 2N5656

(VCE = 250 Vdc, VEB(off) = 1.5 Vdc, TC = 100

C) 2N5657

ÎÎÎÎ

ICEX

ÎÎÎÎ

—

ÎÎÎÎ

0.1

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 275 Vdc, IE = 0) 2N5655

(VCB = 325 Vdc, IE = 0) 2N5656

(VCB = 375 Vdc, IE = 0) 2N5657

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (1)

(IC = 50 mAdc, VCE = 10 Vdc)

(IC = 100 mAdc, VCE = 10 Vdc)

(IC = 250 mAdc, VCE = 10 Vdc)

(IC = 500 mAdc, VCE = 10 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

5.0

ÎÎÎÎ

—

250

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (1)

(IC = 100 mAdc, IB = 10 mAdc)

(IC = 250 mAdc, IB = 25 mAdc)

(IC = 500 mAdc, IB = 100 mAdc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

1.0

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Voltage (1) (IC = 100 mAdc, VCE = 10 Vdc)

ÎÎÎÎ

VBE

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product (2) (IC = 50 mAdc, VCE = 10 Vdc, f = 10 MHz)

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz)

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain (IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

—

ÎÎÎ

—

*Indicates JEDEC Registered Data for 2N5655 Series.

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.

(2) fT is defined as the frequency at which |hfe| extrapolates to unity.

1.0

Figure 3. Active–Region Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.5

0.2

0.1

0.01 30 40 60 100 200 300 400 600

Second Breakdown Limit

Thermal Limit @ TC = 25

Bonding Wire Limit

IC, COLLECTOR CURRENT (AMP)

Curves apply below rated VCEO

TJ = 150

dc 1.0 ms

0.05

0.02

2N5655

2N5656

2N5657

500

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 3 is based on TJ(pk) = 150

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

150

C. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

  

Motorola Bipolar Power Transistor Device Data

Figure 4. Current Gain

IC, COLLECTOR CURRENT (mA)

300

101.0

200

100

2.0 3.0 5.0 7.0 30 50 70 100 200 300 50010 20

hFE, DC CURRENT GAIN

TJ = +150

+25

–55

VCE = 10 V

VCE = 2.0 V

+100

1.0

10 IC, COLLECTOR CURRENT (mA)

0.8

0.6

0.4

020 50 100 200 300 500

VBE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)

0.2

VBE @ VCE = 10 V

VCE(sat) @ IC/IB = 10

IC/IB = 5.0 TJ = +25

Figure 5. “On” Voltages

300

0.1 VR, REVERSE VOLTAGE (VOLTS)

10 2.0 5.0 10 20 50 1000.2 0.5 1.0

C, CAPACITANCE (pF)

200

Cib

Cob

100

TJ = +25

Figure 6. Capacitance

1.0

Figure 7. Turn–On Time

IC, COLLECTOR CURRENT (mA)

t, TIME ( s)

5.0

2.0

1.0

0.5

0.2

0.1

0.01 2.0 5.0 10 20 50 100 500

0.05

0.02

200

trIC/IB = 10

VCC = 300 V, VBE(off) = 2.0 V

(2N5656, 2N5657, only)

VCC = 100 V, VBE(off) = 0 V

1.0

Figure 8. Turn–Off Time

IC, COLLECTOR CURRENT (mA)

t, TIME ( s)

5.0

2.0

1.0

0.5

0.2

0.1 2.0 5.0 10 20 50 100 500200

IC/IB = 10

VCC = 100 V

VCC = 300 V

(Type 2N5656, 2N5657, only)

  

4Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 77–08

TO–225AA TYPE

ISSUE V

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

–B–

–A– M

1 32

2 PL

0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.425 0.435 10.80 11.04

B0.295 0.305 7.50 7.74

C0.095 0.105 2.42 2.66

D0.020 0.026 0.51 0.66

F0.115 0.130 2.93 3.30

G0.094 BSC 2.39 BSC

H0.050 0.095 1.27 2.41

J0.015 0.025 0.39 0.63

K0.575 0.655 14.61 16.63

M5 TYP 5 TYP

Q0.148 0.158 3.76 4.01

R0.045 0.055 1.15 1.39

S0.025 0.035 0.64 0.88

U0.145 0.155 3.69 3.93

V0.040 ––– 1.02 –––

_ _

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2N5655/D

*2N5655/D*

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