MOSFET
N-Channel 50-V(D-S) MOSFET
Page 1
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Mechanical data
-Case: SOT-23, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
BSS138-G
QW-BTR40
Comchip Technology CO., LTD.
Features
-Rugged and Reliable.
-High density cell design for extremely low RDS(ON).
Maximum Ratings (at Ta=25°C unless otherwise noted)
Drain-source voltage
Continuous gate-source voltage
Continuous drain current
Power dissipation
Operating temperature
Storage temperature
Units
Symbol
Parameter
VDS
VGS
ID
PD
RΘJA
TJ
TSTG
Value
50
±20
0.22
0.35
357
150
-55 to +150
V
V
A
W
°C/W
°C
°C
Thermal resistance from Junction to ambient
Circuit diagram
G
D
S
Company reserves the right to improve product design , functions and reliability without notice.
1 : Gate
2 : Source
3 : Drain
Dimensions in inches and (millimeter)
SOT-23
3
1 2
0.118(3.00)
0.110(2.80)
0.055(1.40)
0.047(1.20)
0.079(2.00)
0.071(1.80)
0.041(1.05)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.006(0.15)
0.003(0.08)
0.100(2.55)
0.089(2.25)
0.004(0.10) max
0.012(0.30)
0.020(0.50)
RoHS Device
MOSFET
Page 2
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QW-BTR40
Comchip Technology CO., LTD.
Electrical Characteristics ( TA=25°C unless otherwise noted)
Symbol
Parameter Conditions Typ
Max
Unit
V(BR)DSS
IGSS
IDSS
VGS(th)
RDS(ON)
gFS
Ciss
Coss
Crss
td(on)
tr
VGS=0V, ID=250μA
VDS=0V, VGS=±20V
VDS=50V, VGS=0V
VDS= , VGS ID=1mA
VGS=10V, ID=0.22A
VGS=4.5V, ID=0.22A
VDS=10V, ID=0.22A
VDS=25V, VGS=0V, f=1MHz
VDD=30V, VDS=10V,
ID=0.29A, ΩRGEN=6
Min
Drain-Source breakdown voltage
Gate-body leakage
Zero gate voltage drain current
Gate-threshold voltage (note 1)
Forward transconductance (note 1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time (note 1,2)
Rise time (note 1,2)
50
0.8
0.12
V
±100
0.5
3.5
6
27
13
6
5
18
V
nA
μA
V
Ω
S
pF
ns
1.5
Off characteristics
Dynamic characteristics (note 2)
Switching Characteristics
Turn-off delay time (note 1,2) td(off) 36
Fall time (note 1,2) tf14
IDSS
VDS=30V, VGS=0V
100
nA
VSD
Body diode forward voltage (note 1) 1.4
Drain-source body diode characteristics
V
IS=0.44A, VGS=0V
Note:
1. Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 2%
2. These parameters have no way to verify.
On characteristics
Static drain-source on-resistance
(note 1)
Company reserves the right to improve product design , functions and reliability without notice.
MOSFET
Page 3
REV:A
QW-BTR40
Comchip Technology CO., LTD.
RATING AND CHARACTERISTIC CURVES ( )BSS138-G
Drain Current, ID (A)
Fig.3 - RDS(ON) － ID
ON-Resistance, RDS(ON) (Ω)
Gate to Source Voltage, VGS (V)
Fig.4 - RDS(ON) － VGS
ON-Resistance, RDS(ON) (Ω)
Drain to Source Voltage, VDS (V)
Fig.1 - Output Characteristics
0
Drain Current, ID (A)
2.0
045
1.0
1 2 3
0.5
1.5
Gate to Source Voltage, VGS (V)
4
21
0
Fig.2 - Transfer Characteristics
0
0.4
0.6
Drain Current, ID (A)
0.1
3
0.0
1.0
3.0
0.1 0.2 1.00.4 0.80.6
1.5
0.5
2.0
Source to Drain Voltage, VSD (V)
1.40.60.40.2
Fig.5 - IS － VSD
0.01
0.1
1
Source Current, IS (A)
0.001
0.8
TA=25°C
Pulsed
VGS=10V
5V
4V
3V
2V
TA=25°C
Pulsed
0.2
0.3
0.5
2.5
VGS= 4.5V
VGS= 10V
VGS= 6V
TA=25°C
Pulsed
4
2 6
0
0
4
6
1
8
2
3
5
10
TA=25°C
Pulsed
ID= 500mA
1.21.0
TA=25°C
Pulsed
Reel Taping Specification
B C dD D2D1
SOT-23
SYMBOL
A
(mm)
(inch) 2.142 ± 0.039
4.00 ± 0.10
Φ1.50 0.10±54.40 ± 1.00 13.00 ± 1.00
4.00 ± 0.10 2.00 ± 0.10
178 ± 2.00
Φ0.059 ± 0.004 7.008 ± 0.079 0.512 ± 0.039
SYMBOL
(mm)
(inch) 0. ± 0.004157 0.157 ± 0.004 0.079 ± 0.004
E F P P0P1W W1
1.75 ± 0.10
0.069 ± 0.004
3.50 ± 0.10
0.138 ± 0.004
SOT-23
3.15 ± 0.10
0.124 ± 0.004
2.77 ± 0.10
0.109 ± 0.004
1.22 ± 0.10
0.048 ± 0.004
12.30 ± 1.00
0.484 ± 0.039
8.00 0.30 /+–0.10
0.315 0.012 /+–0.004
d
F E
B
P1 P0
o
120
D1
D2
W1
P
D
A
W
T
C
MOSFET
Page 4
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QW-BTR40
Comchip Technology CO., LTD.
MOSFET
Page 5
REV:A
QW-BTR40
Comchip Technology CO., LTD.
Part Number
BSS138-G
Marking Code
SS
Marking Code
XX
3
1 2
xx = Product type marking code
Suggested PAD Layout
SIZE
(inch)
0.031
(mm)
0.80
1.90
2.02
0.075
0.080
SOT-23
2.82 0.111
A
B
C
D
A
C
B
D
Standard Packaging
Case Type
SOT-23 3,000
REEL
( pcs )
Reel Size
(inch)
7
REEL PACK