A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
S
p
ecifications are sub
j
ect to chan
g
e without notice.
CHARACTERISTICS TC = 25 °C NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVDSS ID = 10 mA 65 V
IDSS VDS = 28 V VGS = 0 V 2.0 mA
IGSS VDS = 0 V VGS = ±20 V 1.0 µA
VGS(th) VDS = 10 V ID = 10 mA 2.0 4.5 V
gfs VDS = 10 V ID = 1.5 A 1.2 1.9 S
Ciss
Coss
Crss VDS = 28 V VGS = 0 V f = 1.0 MHz 125
75
7.0
pF
PG
ηD VDS = 28 V IDQ = 25 mA Pout = 30 W
f = 150 MHz 13
50 16
60 dB
%
ψ VSWR = 30:1 AT ALL PHASE ANGLES NO DEGRADATION IN OUTPUT POWER
RF POWER MOSFET
N-Channel Enhancement Mode
BLF245C
PACKAGE STYLE .400 8L FLG
COMMON SOURCE
DESCRIPTION:
The ASI BLF245C is a VDMOS
transistor designed for large signal
amplifier applications in the VHF
frequency range.
FEATURES INCLUDE:
• PG = 16 dB Typical at 175 MHz
• 30:1 Load VSWR Capability
• Omnigold™ metalization system
MAXIMUM RATINGS
ID 6.0 A
VDS 65 V
VGS ±20 V
PDISS 68 W @ TC = 25 °C
TJ -65 °C to +150 °C
TSTG -65 °C to +200 °C
θJC 1.8 °C/W
MINIMUM
inches / m m
.115 / 2.92
.065 / 1.65
.380 / 9.65
B
C
D
E
F
G
A
MAXIMUM
.125 / 3.18
.390 / 9.91
.075 / 1.91
inches / mm
H.645 / 16.38 .655 / 16.64
DIM
K
L
I
J
.895 / 22.73
.420 / 10.67
.120 / 3.05
.905 / 22.99
.430 / 10.92
.130 / 3.30
O
N
M
.395 / 10.03
.159 / 4.04
.405 / 10.29
.175 / 4.45
.003 / 0.08 .007 / 0.18
.280 / 7.11
.130 / 3.30
D
K
E
.125
F
G
.1925
J
I
H
N
LM
4 x .060 R
FULL R
A
B
C
O
.360 / 9.14
.030 / 0.76
.735 / 18.67 .765 / 19.43
