2N3740 2N3741
MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N3740A 2N3741A UNITS
Collector-Base Voltage VCBO 60 80 V
Collector-Emitter Voltage VCEO 60 80 V
Emitter-Base Voltage VEBO 7.0 V
Continuous Collector Current IC 4.0 A
Peak Collector Current ICM 10 A
Continuous Base Current IB 2.0 A
Power Dissipation PD 25 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICEV V
CE=Rated VCEO, VBE=1.5V (2N3740, 2N3741) 100 μA
ICEV V
CE=Rated VCEO, VBE=1.5V (2N3740A, 2N3741A) 100 nA
ICEV V
CE=40V, VBE=1.5V, TC=150°C (2N3740) 1.0 mA
ICEV V
CE=40V, VBE=1.5V, TC=150°C (2N3740A) 0.5 mA
ICEV V
CE=60V, VBE=1.5V, TC=150°C (2N3741) 1.0 mA
ICEV V
CE=60V, VBE=1.5V, TC=150°C (2N3741A) 0.5 mA
ICBO V
CB=Rated VCBO (2N3740, 2N3741) 100 μA
ICBO V
CB=Rated VCBO (2N3740A, 2N3741A) 100 nA
ICEO V
CE=40V (2N3740) 1.0 mA
ICEO V
CE=40V (2N3740A) 1.0 μA
ICEO V
CE=60V (2N3741) 1.0 mA
ICEO V
CE=60V (2N3741A) 1.0 μA
IEBO V
EB=7.0V (2N3740, 2N3741) 0.5 mA
IEBO V
EB=7.0V (2N3740A, 2N3741A) 100 nA
BVCEO IC=100mA (2N3740, 2N3740A) 60 V
BVCEO IC=100mA (2N3741, 2N3741A) 80 V
VCE(SAT) IC=1.0A, IB=125mA 0.6 V
VBE(ON) VCE=1.0V, IC=250mA 1.0 V
hFE VCE=1.0V, IC=100mA 40
hFE VCE=1.0V, IC=250mA 30 200
hFE VCE=1.0V, IC=500mA 20
hFE VCE=1.0V, IC=1.0A 10
hfe VCE=10V, IC=50mA, f=1.0kHz 25
fT VCE=10V, IC=100mA, f=1.0MHz 4.0 MHz
Cob VCB=10V, IE=0, f=100kHz 100 pF
2N3740 2N3740A
2N3741 2N3741A
SILICON
PNP POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3740 series
devices are silicon PNP power transistors manufactured
by the epitaxial base process designed for power
amplifier and medium speed switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
R2 (2-September 2014)
www.centralsemi.com
2N3740 2N3740A
2N3741 2N3741A
SILICON
PNP POWER TRANSISTORS
TO-66 CASE - MECHANICAL OUTLINE
MARKING:
FULL PART NUMBER
www.centralsemi.com
R2 (2-September 2014)
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