SIEMENS BCR 108W NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (Ry=2.2kQ, Ro=47kQ) VS005561 Type Marking |Ordering Code | Pin Configuration Package BCR 108W WHs Q62702-C2275 |1=B \2 =E 3=C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VoEO 50 Vv Collector-base voltage Voso 50 Emitter-base voltage VeBo 5 Input on Voltage Vicon) 10 DC collector current Ie 100 mA Total power dissipation, Tg = 124C Prot 250 mw Junction temperature Tj 150 C Storage temperature Tig - 65... + 150 Thermai Resistance Junction ambient =?) Pihga < 240 KAW Junction - soldering point Abs = 105 1) Package mounted on peb 40mm x 40mm x 1.5mm / 0.5om? Cu Semiconductor Group 587 11.96 SIEMENS BCR 108W Electrical Characteristics at T,=25C, unless otherwise specified Parameter Symbol Values Unit min. _|typ. |max. DC Characteristics Collector-emitter breakdown voitage VieR)CEO Vv Io = 100 pA, Ip =0 50 - : Collector-base breakdown voltage ViprycBo Ig = 10 pA, Ig =O 50 - - Collector cutoff current lcBo nA Vop = 40 V, Ie = 0 - - 100 Emitter cutoff current leBo pA Veg =5V, lg =0 - - 164 DC current gain hee - Ig =5 MA, Voge =5V 70 - - Collector-emitter saturation voltage 1) | Veesat Vv io =5 MA, Ig=0.5mA - - 0.3 Input off voltage Viothy Io = 100 WA, Vog = 5 V 0.4 - 0.8 Input on Voltage Viton) ig =2mMA, Vog = 0.3V 0.5 - 1.4 Input resistor Ry i) 2.2 2.9 kQ Resistor ratio Fiy/Re 0.042 0.047 0.052 - AC Characteristics Transition frequency fr MHz Io = 10 mA, Veg = 5 V, f= 100 MHz - 170 - Collector-base capacitance Cob pF Vop = 10 V, f= 1 MHz - 2 - 1) Pulse test: t < 300ps; D < 2% Semiconductor Group 588 11.96 SIEMENS BCR 106M DC Current Gain fre = f (Ic) Collector-Emitter Saturation Voltage Voce = 5V (common emitter configuration) Voesat = Alc), fre = 20 102 190 10 10 10 mA 0.0 0.4 0.2 0.3 v 05 me Veceat input on Voltage Vion) = {ic) input off voltage Vio = A/c) Vor = 0.3V (common emitter configuration) Voce = 5V (common emitter configuration) 10 103 0.0 0.1 02 03 04 05 06 07 08 V 10 eNom Semiconductor Group 589 11.96 SIEMENS Bor 108W Total power dissipation P,,; = f (Ta*:Ts) * Package mounted on epoxy 300 mw 50 0 | 0 20 40 60 80 100 120 C_150 ae Tas Permissible Pulse Load Ainis = ftp) Permissible Pulse Load Promax / Ptotoc = Af) ii | cM eC | eM Het Th - Mt TH HH Ze Ne | aS 10 Semiconductor Group 590 11.96