FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Publication Order Number:
FOD814/D
©2006 Semiconductor Components Industries, LLC.
July-2018, Rev. 5
FOD814 Series, FOD817 Series
4-Pin DIP Phototransistor Optocouplers
Features
•AC Input Response (FOD814)
•Current Transfer Ratio in Selected Groups:
•Minimum BVCEO of 70 V Guaranteed
•Safety and Regulatory Approvals
–UL1577, 5,000 VACRMS for 1 Minute
–DIN EN/IEC60747-5-5
Applications
FOD814 Series
•AC Line Monitor
•Unknown Polarity DC Sensor
•Telephone Line Interface
FOD817 Series
•Power Supply Regulators
•Digital Logic Inputs
•Microprocessor Inputs
Description
The FOD814 consists of two gallium arsenide infrared
emitting diodes, connected in inverse parallel, driving a
silicon phototransistor output in a 4-pin dual in-line
package. The FOD817 Series consists of a gallium
arsenide infrared emitting diode driving a silicon
phototransistor in a 4-pin dual in-line package.
Functional Block Diagram
FOD814: 20–300% FOD817: 50–600%
FOD814A: 50–150%FOD817A: 80–160%
FOD817B: 130–260%
FOD817C: 200–400%
FOD817D: 300–600%
1ANODE, CATHODE
2
4
3CATHODE, ANODE
COLLECTOR
EMITTER
1
2
4
3 EMITTER
COLLECTORANODE
CATHODE
FOD814 FOD817
4
1
Figure 1. SchematicFigure 2. Package Outlines
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FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
Parameter Characteristics
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Vol tage < 150 VRMS I–IV
< 300 VRMS I–III
Climatic Classification 30/110/21
Pollution Degree (DIN VDE 0110/1.89) 2
Comparative Trackin g Index 175
Symbol Parameter Value Unit
VPR
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak
VIORM Maximum Working Insulation Voltage 850 Vpeak
VIOTM Highest Allowable Over-Voltage 8000 Vpeak
External Creepage 7mm
External Clearance 7mm
External Clearance (for Option W, 0.4" Lead Spacing) 10 mm
DTI Distance Through Insulation (Insulation Thickness) 0.4 mm
TSCase Temperature(1) 175 °C
IS,INPUT Input Current(1) 400 mA
PS,OUTPUT Output Power(1) 700 mW
RIO Insulation Resistance at TS, VIO = 500 V(1) > 1011
FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not functi on or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exp osure to stresses above the reco mmended op erating conditions may affe ct device reliabil ity.
The absolute maximum ratings are stress ratings only. TA = 25°C Unless otherwise specified.
Symbol Parameter Value Unit
FOD814 FOD817
Total Device
TSTG Storage Temperature -55 to +150 °C
TOPR Operating Temperature -55 to +105 -55 to +110 °C
TJJunction Temperature -55 to +125 °C
TSOL Lead Solder Temperature 260 for 10 seconds °C
JC Junction-to-Case Thermal Resistance 210 °C/W
PTOT Total Device Power Dissipation 200 mW
EMITTER
IFContinuous Forward Current ±50 50 mA
VRReverse Voltage 6 V
PDPower Dissipation 70 mW
Derate Above 100°C 1.7 mW/°C
DETECTOR
VCEO Collector-Emitter Voltage 70 V
VECO Emitter-Collector Voltage 6 V
ICContinuous Collector Current 50 mA
PCCollector Power Dissipation 150 mW
Derate Above 90°C 2.9 mW/°C
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FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Electrical Characteristics
TA = 25°C unless otherwise specified.
Individual Component Characteristics
DC Transfer Characteristics
AC Transfer Characteristics
Notes:
2. Current Transfer Ratio (CTR) = IC / IF x 100%.
3. For test circuit setup and wa veforms, refer to page 7.
Symbol Parameter Device Test Conditions Min. Typ. Max. Unit
EMITTER
VFForward Voltage FOD814 IF = ±20 mA 1.2 1.4 V
FOD817 IF = 20 mA 1.2 1.4
IRReverse Current FOD817 VR = 4.0 V 10 µA
CtTerminal Capacitance FOD814 V = 0, f = 1 kHz 50 250 pF
FOD817 V = 0, f = 1 kHz 30 250
DETECTOR
ICEO Collector Dark Current FOD814 VCE = 20 V, IF = 0 100 nA
FOD817 VCE = 20 V, IF = 0 100
BVCEO Collector-Emitter Breakdown
Voltage FOD814 IC = 0.1 mA, IF = 0 70 V
FOD817 IC = 0.1 mA, IF = 0 70
BVECO Emitter-Collector Breakdown
Voltage FOD814 IE = 10 µA, IF = 0 6 V
FOD817 IE = 10 µA, IF = 0 6
Symbol Parameter Device Test Conditions Min. Typ. Max. Unit
CTR Current Transfer Ratio(2)
FOD814 IF = ±1 mA, VCE = 5 V 20 300
%
FOD814A 50 150
FOD817
IF = 5 mA, VCE = 5 V
50 600
FOD817A 80 160
FOD817B 130 260
FOD817C 200 400
FOD817D 300 600
VCE(SAT) Collector-Emitter Saturation
Voltage FOD814 IF = ±20 mA, IC = 1 mA 0.1 0.2 V
FOD817 IF = 20 mA, IC = 1 mA 0.1 0.2
Symbol Parameter Device Test Conditions Min. Typ. Max. Unit
fCCut-Off Frequency FOD814 VCE = 5 V, IC = 2 mA,
RL = 100 , -3 dB 15 80 kHz
trResponse Time (Rise) FOD814,
FOD817 VCE = 2 V, IC = 2 mA,
RL = 100 (3)
418µs
tfResponse Time (Fall) FOD814,
FOD817 318µs
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FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Electrical Characteristics (Continued)
TA = 25°C unless otherwise specified.
Isolation Characteristics
Note:
4. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
Symbol Parameter Device Test Conditions Min. Typ. Max. Unit
VISO Input-Output Isolation
Voltage(4) FOD814,
FOD817 f = 60 Hz, t = 1 minute,
II-O 2 µA 5000 VACRMS
RISO Isolation Resistance FOD814,
FOD817 VI-O = 500 VDC 5x1010 1x1011
CISO Isolation Capacitance FOD814,
FOD817 VI-O = 0, f = 1 MHz 0.6 1.0 pf
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FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Typical Electrical/Optical Characteristic Curves
TA = 25°C unless otherwise specified.
0
1
2
3
4
5
6
COLLECTOR POWER DISSIPATION PC(mW)
Fig. 3 Collector Power Dissipation
vs. Ambient Temperature (FOD814)
FORWARD CURRENT IF (mA)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
Fig. 5 Collector-Emitter Saturation Voltage
vs. Forward Current
Fig. 7 Forward Current vs. Forward Voltage
(FOD817)
FORWARD VOLTAGE VF (V)
FORWARD CURRENT IF(mA)
FORWARD CURRENT IF (mA)
CURRENT TRANSFER RATIO CTR ( %)
Fig. 8 Current Transfer Ratio
vs. Forward Current
AMBIENT TEMPERATURE TA (°C)
15.012.510.07.55.02.50
V =
CE 5V
Ta= 25°C
Ic = 0 .5 m A
1m A
3m A
Ta = 25°C
7m A
5m A
0
0.1 0.2 0.5 1 2 5 10 20 50 100
20
40
60
80
100
120
140
-40 -20 0 20 40 60 80 100 120
-55
0
50
100
150
200
COLLECTOR POWER DISSIPATION PC(mW)
Fig. 4 Collector Power Dissipation
vs. Ambient Temperature (FOD817)
AMBIENT TEMPERATURE TA (°C)
-40 -20 0 20 40 60 80 100 120
-55
0
50
100
150
200
0.5 1.0 1.5 2.0
T
A
= 110
o
C
75
o
C
50
o
C
25
o
C
0
o
C
-30
o
C
-55
o
C
0.1
1
10
100
FOD814
FOD817
Fig. 6 Forward Current vs. Forward Voltage
(FOD814)
FORWARD VOLTAGE VF (V)
FORWARD CURRENT IF(mA)
0.5 1.0 1.5 2.0
T
A
= 105
o
C
75
o
C
50
o
C
25
o
C
0
o
C
-30
o
C
-55
o
C
0.1
1
10
100
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FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Typical Electrical/Optical Characteristic Curves (Continued)
TA = 25°C unless otherwise specified.
AMBIENT TEMPERATURE TA (°C)
Fig. 12 Collector-Emitter Saturation Voltage
vs. Ambient Temperature
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
LED POWER DISSIPATION PLED (mW)
-60 -40 -20 0 20 40 60 80 100 120
0.00
0.02
0.04
0.06
0.08
0.10
0.12
I
F
= 20mA
I
C
= 1mA
Fig. 13 LED Power Dissipation vs.
Ambient Temperature (FOD814)
AMBIENT TEMPERATURE TA (°C)
-40 -20 0 20 40 60 80 100 120-55
0
20
40
60
80
100
LED POWER DISSIPATION PLED (mW)
Fig. 14 LED Power Dissipation vs.
Ambient Temperature (FOD817)
AMBIENT TEMPERATURE TA (°C)
-40 -20 0 20 40 60 80 100 120-55
0
20
40
60
80
100
AMBIENT TEMPERATURE T
A
(°C)
RELATIVE CURRENT TRANSFER
RATIO (%)
Fig. 11 Relative Current Transfer
Ratio vs. Ambient Temperature
-60 -40 -20 0 20 40 60 80 100 120
I
F
= 1 mA
V
CE
= 5V
0
20
40
60
80
100
120
140
160
FOD814
I
F
= 5mA
V
CE
= 5V
FOD817
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC(mA)
Fig. 9 Collector Current
vs. Collector-Emitter Voltage (FOD814)
Ta= 25°C
I = 30mA
Pc (M AX.)
5mA
10mA
1mA
F
20 m A
0 102030405060708090100
0
10
20
30
40
50
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC(mA)
Ta = 25°C
I I
F
= 30mA
Pc(MAX.)
5m A
10mA
20mA
30
25
20
15
10
5
0
0 102030405060708090
Fig. 10 Collector Current vs.
Collector-Emitter Voltage (FOD817)
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FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Typical Electrical/Optical Characteristic Curves (Continued)
TA = 25°C unless otherwise specified.
Test Circuit for Response Time Test Circuit for Frequency Response
Input R
Output
Input
R
DOutput
L
Vcc
td
tr
tf
ts
90%
10% Output
R
DL
R
Vcc
LOAD RESISTANCE RL (kΩ)
RESPONSE TIME (μs)
Fig. 15 Response Time
vs. Load Resistance
FREQUENCY f (kHz)
VOLTAGE GAIN AV(dB)
Fig. 16 Frequency Response
CE
V = 2 V
Ic = 2m A
Ta = 25°C tr
tf
ts
td
R =10k
L1k 100
VCE =2V
Ic = 2mA
Ta = 25°C
-20
0.1
0.1
0.2 0.5 1 2 5 10
0.2
0.5
1
2
5
10
20
50
100
0.2
-10
0
15 20.5 100010010
AMBIENT TEMPERATURE TA (°C)
Fig. 17 Collector Dark Current
vs. Ambient Temperature
COLLECTOR DARK CURRENT ICEO (nA)
-60 -40 -20 0 20 40 60 80 100 120
0.01
0.1
1
10
100
1000
10000
V
CE
= 20V
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FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Reflow Profile
Figure 20. Reflow Prof ile
Profile Feature Pb-Free Assembly Profile
Temperature Min. (Tsmin) 150°C
Temperature Max. (Tsmax) 200°C
Time (t
S
) from (Tsmin to Tsmax) 60–120 seconds
Ramp-up Rate (t
L
to t
P
) 3°C/second max.
Liquidous Temperature (T
L
) 217°C
Time (t
L
) Maintained Above (T
L
) 60–150 seconds
Peak Body Package Temperature 260°C +0°C / –5°C
Time (t
P
) within 5°C of 260°C 30 seconds
Ramp-down Rate (T
P
to T
L
) 6°C/second max.
Time 25°C to Peak Temperature 8 minutes max.
Time (seconds)
Temperature (°C)
Time 25°C to Peak
260
240
220
200
180
160
140
120
100
80
60
40
20
0
T
L
t
s
t
L
t
P
T
P
Tsmax
Tsmin
Preheat Area
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
120 240 360
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FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Ordering Information
Note:
The product orderable part number system listed in this table also applies to the FOD814 products.
"X" denotes the Current Transfer Ratio (CTR) options
Marking Information
Part Number Package Packing Method
FOD817X DIP 4-Pin Tube (100 units per tube)
FOD817XS SMT 4-Pin (Lead Bend) Tube (100 units per tube)
FOD817XSDSMT 4-Pin (Lead Bend) Tape and Reel (1,000 units per reel)
FOD817X300DIP 4-Pin, DIN EN/IEC60747-5-5 option Tube (100 units per tube)
FOD817X3S SMT 4-Pin (Lead Bend), DIN EN/IEC60747-5-5 option Tube (100 units per tube)
FOD817X3SDSMT 4-Pin (Lead Bend), DIN EN/IEC60747-5-5 option Tape and Reel (1,000 units per reel)
FOD817X300W DIP 4-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 option Tube (100 units per tube)
1
2
6
4
3
5
Definitions
1ON Semiconductor Logo
2Device Number
3VDE Mark (Note: Only appears on parts ordered with VDE option.
See order entry table)
4 One Digit Year Code
5 Two Digit Work Week Ranging from ‘01’ to ‘53’
6 Assembly Package Code
817
XV Y
ZZ
Figure 21. Top Mark
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FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Carrier Tape Specifications
Figure 22. Carrier Tape Specification
Symbol Description Dimensions in mm (inches)
W Tape wide 16 ± 0.3 (0.63)
P0Pitch of sprocket hol e s 4 ± 0.1 (0.15)
F
P2
Distance of compartment 7.5 ± 0.1 (0.295)
2 ± 0.1 (0.079)
P1Distance of compartment to compartment 12 ± 0.1 (0.472)
A0 Compartment 10.45 ± 0.1 (0.411)
B0 5.30 ± 0.1 (0.209)
K0 4.25 ± 0.1 (0.167)
P
2
P
1
P
0
1.75±0.1
0.3±0.05
Ø1.55±0.05
F
B0
A0
K0
W
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