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T4-LDS-0101-1, Rev. 1 (121466) ©2012 Microsemi Corporation Page 4 of 9
2N6764T1, 2N67 66T 1, 2N6 768T 1 an d
2N6770T1
ELECTRICAL CHARACTE RISTICS @ TA = +25 ° C , unles s otherwise noted (continued)
Paramete r s / Test Conditions
On-State Gate Charge
VGS = 10 V, ID = 38.0 A, VDS = 50 V
VGS = 10 V, ID = 30.0 A, VDS = 100 V
VGS = 10 V, ID = 14.0 A, VDS = 200 V
VGS = 10 V, ID = 12.0 A, VDS = 250 V
2N6764T1
2N6766T1
2N6768T1
Qg(on)
125
115
110
nC
G ate t o Source C harge
VGS = 10 V, ID = 38.0 A, VDS = 50 V
VGS = 10 V, ID = 30.0 A , VDS = 100 V
VGS = 10 V, ID = 14.0 A, VDS = 200 V
VGS = 10 V, ID = 12.0 A, VDS = 250 V
2N6764T1
2N6766T1
2N6768T1
Qgs
22
22
18
nC
G ate t o D r ain C harge
VGS = 10 V, ID = 38.0 A, VDS = 50 V
VGS = 10 V, ID = 30.0 A, VDS = 100 V
VGS = 10 V, ID = 14.0 A, VDS = 200 V
VGS = 10 V, ID = 12.0 A, VDS = 250 V
2N6764T1
2N6766T1
2N6768T1
Qgd
65
60
65
nC
SW ITCHING CHARACTERIST ICS
Paramete r s / Test Conditions
ID = 38.0 A, VGS = +10 V, RG = 2.35 Ω, VDD = 50 V
ID = 30.0 A, VGS = +10 V, RG = 2.35 Ω, VDD = 10 0 V
ID = 14.0 A, VGS = +10 V, RG = 2.35 Ω, VDD = 20 0 V
I
= 12.0 A, V
= +10 V, R
= 2.35 Ω, V
= 25 0 V
2N6764T1
2N6766T1
2N6768T1
2N6770T1
td(on)
35
ns
ID = 38.0 A, VGS = +10 V, RG = 2.35 Ω, VDD = 50 V
ID = 30.0 A, VGS = +10 V, RG = 2.35 Ω, VDD = 10 0 V
ID = 14.0 A, VGS = +10 V, RG = 2.35 Ω, VDD = 20 0 V
I
= 12.0 A, V
= +10 V, R
= 2.35 Ω, V
= 25 0 V
2N6764T1
2N6766T1
2N6768T1
2N6770T1
tr
190
ns
ID = 38.0 A, VGS = +10 V, RG = 2.35 Ω, VDD = 50 V
ID = 30.0 A, VGS = +10 V, RG = 2.35 Ω, VDD = 10 0 V
ID = 14.0 A, VGS = +10 V, RG = 2.35 Ω, VDD = 20 0 V
I
= 12.0 A, V
= +10 V, R
= 2.35 Ω, V
= 25 0 V
2N6764T1
2N6766T1
2N6768T1
2N6770T1
td(off)
170
ns
ID = 38.0 A, VGS = +10 V, RG = 2.35 Ω, VDD = 50 V
ID = 30.0 A, VGS = +10 V, RG = 2.35 Ω, VDD = 10 0 V
ID = 14.0 A, VGS = +10 V, RG = 2.35 Ω, VDD = 20 0 V
I
= 12.0 A, V
= +10 V, R
= 2.35 Ω, V
= 250 V
2N6764T1
2N6766T1
2N6768T1
2N6770T1
tf
130
ns
Diode Reverse Recovery Ti me
di/dt = 100 A/µ s, VDD ≤ 30 V, ID = 38.0 A
di/dt = 100 A/µ s, VDD ≤ 30 V, ID = 30.0 A
di/dt = 100 A/µ s, VDD ≤ 30 V, ID = 14.0 A
di/dt = 100 A/µ s, VDD ≤ 30 V, ID = 12.0 A
2N6764T1
2N6766T1
2N6768T1
2N6770T1
trr
500
950
1200
1600
ns